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HMC784MS8GE

产品描述0 MHz - 4000 MHz RF/MICROWAVE DIVERSITY SWITCH, 2 dB INSERTION LOSS
产品类别无线/射频/通信    射频和微波   
文件大小246KB,共8页
制造商Hittite Microwave(ADI)
官网地址http://www.hittite.com/
标准
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HMC784MS8GE概述

0 MHz - 4000 MHz RF/MICROWAVE DIVERSITY SWITCH, 2 dB INSERTION LOSS

0 MHz - 4000 MHz 射频/微波开关, 2 dB 插入 损耗

HMC784MS8GE规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Hittite Microwave(ADI)
包装说明TSSOP8,.19
Reach Compliance Codecompli
ECCN代码EAR99
1dB压缩点35 dBm
其他特性CMOS/TTL COMPATIBLE
特性阻抗50 Ω
构造COMPONENT
最大输入功率 (CW)39 dBm
最大插入损耗2 dB
最小隔离度26 dB
JESD-609代码e3
安装特点SURFACE MOUNT
功能数量1
端子数量8
准时0.04 µs
最大工作频率4000 MHz
最小工作频率
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装等效代码TSSOP8,.19
电源5 V
射频/微波设备类型DIVERSITY SWITCH
表面贴装YES
技术GAAS
端子面层Matte Tin (Sn)

文档预览

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HMC784MS8GE
v00.0808
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Typical Applications
The HMC784MS8GE is ideal for:
• Cellular / 4G Infrastructure
• WiMAX, WiBro & Fixed Wireless
• Automotive Telematics
• Mobile Radio
• Test Equipment
Features
Input P1dB: +40 dBm @ Vdd = +8V
High Third Order Intercept: +62 dBm
Positive Control: +3 to +8 V
Low Insertion Loss: 0.4 dB
MSOP8G Package: 14.8 mm
2
Functional Diagram
General Description
The HMC784MS8GE is a high power SPDT switch in
an 8-lead MSOPG package for use in transmit-rece-
ive applications which require very low distortion at
high input signal power levels. The device can con-
trol signals from DC to 4 GHz. The design provides
exceptional intermodulation performance; > +60 dBm
third order intercept at +5V bias. RF1 and RF2 are
reflective shorts when “OFF”. On-chip circuitry allows
single positive supply operation from +3 Vdc to +8 Vdc
at very low DC current with control inputs compatible
with CMOS and most TTL logic families.
11
SWITCHES - SPDT - SMT
Electrical Specifi cations,
T
A
= +25° C, Vctl = 0/Vdd, Vdd = +5V
(Unless Otherwise Stated)
, 50 Ohm System
Parameter
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 4.0 GHz
DC - 4.0 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
Vdd = +3V
Vdd = +5V
Vdd = +8V
Vdd = +3V
Vdd = +5V
Vdd = +8V
0.02 - 0.1 GHz
0.1 - 2.0 GHz
0.1 - 3.0 GHz
0.1 - 4.0 GHz
0.1 - 4.0 GHz
32
35
38
26
Min.
Typ.
0.4
0.6
0.8
0.9
1.3
30
35
30
20
10
32
37
38
35
38
41
42
62
61
60
Max.
0.6
0.8
1.1
1.3
2.0
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Insertion Loss
Isolation
Return Loss (On State)
Input Power for 0.1dB Compression
Input Power for 1dB Compression
0.1 - 4.0 GHz
Input Third Order Intercept
(Two-tone input power = +30 dBm each tone)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 4.0 GHz
15
40
ns
ns
11 - 224
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

 
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