HMC816LP4E
v00.1108
SMT GaAs PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Features
Low Noise Figure: 0.5 dB
High Gain: 22 dB
High Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
24 Lead 4x4mm QFN Package: 16 mm
2
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC816LP4E is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Multi-Channel Applications
Functional Diagram
General Description
The HMC816LP4E is a GaAs PHEMT Dual Channel
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 230 and 660 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
22 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC816LP4E shares
the same package and pinout with the HMC817-
LP4E & HMC818LP4E LNAs. The HMC817LP4E can
be biased with +3V to +5V and features an externally
adjustable supply current which allows the designer
to tailor the linearity performance of each channel of
the LNA for each application.
Electrical Specifi cations,
T
A
= +25° C,
Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2
Vdd = +3V
Parameter
Min.
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
24
10
10
17
Typ.
230 - 450
21
0.001
0.5
13
12
14
15
26
34
44
24
13
14
0.9
14
Max.
Min.
Typ.
450 - 660
17
0.002
0.5
17
10
16
16.5
28
34
44
68
15
16
0.9
19
Max.
Min.
Typ.
230 - 450
22
0.005
0.5
15
13
19
20
34
97
126
68
18
18
0.9
15
Max.
Min.
Typ.
450 - 660
19
0.007
0.5
16
10
21
21
37
97
126
0.9
Max.
MHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
Vdd = +5V
Units
* Rbias sets current, see application circuit herein
8 - 362
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC816LP4E
v00.1108
SMT GaAs PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
5
0
-5
-10
-15
-20
S11
S22
Vdd= 5V
Vdd= 3V
S21
Gain vs. Temperature
24
[1]
8
LOW NOISE AMPLIFIERS - SMT
22
GAIN (dB)
20
18
+25C
+85C
- 40C
16
-25
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
1.2
1.4
14
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
Gain vs. Temperature
[2]
24
Input Return Loss vs. Temperature
[1]
0
22
RETURN LOSS (dB)
-5
+25C
+85C
- 40C
GAIN (dB)
20
-10
18
+25C
+85C
- 40C
-15
16
14
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
-20
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
Output Return Loss vs. Temperature
[1]
0
Reverse Isolation vs. Temperature
[1]
0
-5
REVERSE ISOLATION (dB)
RETURN LOSS (dB)
-5
+25C
+85C
- 40C
-10
-15
-20
-25
-30
-35
+25C
+85C
- 40C
-10
-15
-20
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
-40
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 36
HMC816LP4E
v00.1108
SMT GaAs PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
8
LOW NOISE AMPLIFIERS - SMT
Noise Figure vs. Temperature
[1]
1
P1dB vs. Temperature
24
22
0.8
NOISE FIGURE (dB)
+85C
20
0.6
+25 C
Vdd=5V
P1dB (dBm)
18
16
Vdd=3V
0.4
-40C
14
Vdd=5V
Vdd=3V
0.2
12
10
0.2
+25 C
+85 C
- 40 C
0
0.2
0.3
0.4
0.5
0.6
0.7
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
0.7
FREQUENCY (GHz)
FREQUENCY (GHz)
Psat vs. Temperature
24
22
Output IP3 vs. Temperature
45
Vdd=5V
40
20
Psat (dBm)
18
16
14
12
10
0.2
0.25
0.3
0.35
0.4 0.45 0.5 0.55
FREQUENCY (GHz)
0.6
0.65
0.7
Vdd=3V
Vdd=5V
IP3 (dBm)
+25 C
+85 C
- 40 C
35
30
25
Vdd=3V
+25 C
+85 C
- 40 C
20
0.2
0.3
0.4
0.5
0.6
0.7
FREQUENCY (GHz)
Output IP3 and Supply Current vs.
Supply Voltage @ 400 MHz
38
36
34
IP3 (dBm)
32
30
28
26
24
22
2.7
3.1
3.5
3.9
4.3
4.7
5.1
144
126
108
Output IP3 and Supply Current vs.
Supply Voltage @ 500 MHz
43
40
37
IP3 (dBm)
34
31
28
25
22
2.7
3.1
3.5
3.9
4.3
4.7
5.1
140
120
100
80
60
40
20
0
5.5
Idd (mA)
90
Idd (mA)
72
54
36
18
0
5.5
VOLTAGE SUPPLY (V)
VOLTAGE SUPPLY (V)
[1] Measurement reference plane shown on evaluation PCB drawing.
8 - 364
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC816LP4E
v00.1108
SMT GaAs PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
Power Compression @ 400 MHz
45
Pout (dBm), GAIN (dB), PAE (%)
Pout
Gain
PAE
[1]
Power Compression @ 400 MHz
45
Pout (dBm), GAIN (dB), PAE (%)
40
35
30
25
20
15
10
5
0
Pout
Gain
PAE
[2]
8
LOW NOISE AMPLIFIERS - SMT
NOISE FIGURE (dB)
40
35
30
25
20
15
10
5
0
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
-18
-16
-14
-12
-10
-8
-6
-4
-2
INPUT POWER (dBm)
INPUT POWER (dBm)
Power Compression @ 500 MHz
[1]
45
Pout (dBm), GAIN (dB), PAE (%)
40
35
30
25
20
15
10
5
0
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
INPUT POWER (dBm)
Pout
Gain
PAE
Power Compression @ 500 MHz
[2]
50
Pout (dBm), GAIN (dB), PAE (%)
45
40
35
30
25
20
15
10
5
0
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
INPUT POWER (dBm)
Pout
Gain
PAE
Gain, Power & Noise Figure
vs. Supply Voltage @ 400 MHz
24
Gain
P1dB
Gain, Power & Noise Figure
vs. Supply Voltage @ 500 MHz
1
24
Gain
P1dB
1
GAIN (dB) & P1dB (dBm)
20
0.6
GAIN (dB) & P1dB (dBm)
22
0.8
NOISE FIGURE (dB)
22
0.8
20
0.6
18
0.4
18
0.4
16
Noise Figure
0.2
16
Noise Figure
0.2
14
2.7
3.1
3.5
3.9
4.3
4.7
5.1
0
5.5
14
2.7
3.1
3.5
3.9
4.3
4.7
5.1
0
5.5
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 36
HMC816LP4E
v00.1108
SMT GaAs PHEMT DUAL CHANNEL
LOW NOISE AMPLIFIER, 230 - 660 MHz
8
LOW NOISE AMPLIFIERS - SMT
Output IP3 vs. Rbias @ 400 MHz
40
38
36
34
IP3 (dBm)
32
30
28
26
24
22
500
Vdd= 3V
Vdd= 5V
Output IP3 vs. Rbias @ 500 MHz
40
38
36
34
IP3 (dBm)
32
30
28
26
24
22
500
Vdd= 3V
Vdd= 5V
1000
Rbias (Ohms)
10000
1000
Rbias (Ohms)
10000
Cross Channel Isolation
[1]
0
Magnitude Balance
[1]
1
AMPLITUDE BALANCE (dB)
0.7
-10
ISOLATION (dB)
RFIN1 TO RFOUT2
RFIN2 TO RFOUT1
0.5
-20
0
-30
-0.5
-40
0.2
0.3
0.4
0.5
0.6
-1
0.2
0.3
0.4
0.5
0.6
0.7
FREQUENCY (GHz)
FREQUENCY (GHz)
Phase Balance
2
PHASE BALANCE (degrees)
[1]
Absolute Bias Register for Idd
Range & Recommended Bias Resistor
Rbias Ω
Vdd (V)
Min
Max
Open
circuit
Recommended
10k
820
34
65
80
90
97
Idd (mA)
1
3V
4.7k
0
5V
-1
0
Open
circuit
2k
3.92k
10k
With Vdd = 3V Rbias <4.7k is not recommended and may result in
LNA becoming conditionally unstable.
-2
0.2
0.3
0.4
0.5
0.6
0.7
FREQUENCY (GHz)
[1] Vdd = 5V
8 - 366
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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