HANBiT
HMD16M64D16EV
128Mbyte(16Mx64) EDO Mode 4K/8K Ref. 3.3V, DIMM 168 pin
Part No. HMD16M64D16EV
GENERAL DESCRIPTION
The HMD16M64D16EV is a 16Mx64bits Dynamic RAM high density memory module. The HMD16M64D16EV consists
of sixteen CMOS 16Mx4bits DRAMs in TSOPІІ 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or
0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The HMD16M64D16EV is a Dual In-
line Memory Module and is intended for mounting into 168 pin edge connector sockets
FEATURES
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Part Identification
HMD16M64D16EV- ---- 4KCycles/64ms Ref, Gold Plate Lead
HMD16M64D16EVA --- 8KCycles/64ms Ref, Gold Plate Lead
SPEED
-5
-6
PERFORMANCE RANGE
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
84ns
104ns
t
HPC
20ns
25ns
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High-density 128MByte design
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New JEDEC standard proposal without buffer
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CAS-before-RAS Refresh capability
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RAS-only and Hidden refresh capability
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Single +3.3± 0.3V power supply
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EDO mode operation.
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LVTTL compatible inputs and outputs
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FR4-PCB design
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Access times : 50, 60ns
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Timing
50ns access
60ns access
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Packages
168-pin DIMM
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Marking
-5
-6
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Marking
D
PIN NAMES
Pin Name
A0-A11
Function
Address
ref)
A0-A12
Address
ref)
/WE0,/WE2
/OE0,/OE2
Read/Write Enable
Output Enable
SCL
NC
Input
(8k
/CAS0 - /CAS7
Column
Strobe
Serial Clock
No Connection
DQ0-DQ63
SDA
Data In/Out
Serial Address /Data
I/O
SA0 - SA2
Address in EEPROM
CB0 - CB7
Check Bit
Address
Vcc
Power (+3.3V)
Input
(4k
Pin Name
/RAS0, /RAS2
Function
Row Address Strobe
Pin Name
Vss
Function
Ground
URL:
www.hbe.co.kr
REV.1.0 (August.2002)
-1-
HANBit Electronics Co.,Ltd.
HANBiT
PIN ASSIGNMENT
HMD16M64D16EV
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Symbol
Vss
DQ0
DQ1
DQ2
DQ3
Vcc
DQ4
DQ5
DQ6
DQ7
DQ8
Vss
DQ9
DQ10
DQ11
DQ12
DQ13
Vcc
DQ14
DQ15
NC
NC
Vss
NC
NC
Vcc
/WE0
/CAS0
PIN
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
Symbol
/CAS1
/RAS0
/OE0
Vss
A0
A2
A4
A6
A8
A10
A12
Vcc
Vcc
NC
Vss
/OE2
/RAS2
/CAS2
/CAS3
/WE2
Vcc
NC
NC
NC
NC
Vss
DQ16
DQ17
PIN
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Symbol
DQ18
DQ19
Vcc
DQ20
NC
NC
NC
Vss
DQ21
DQ22
DQ23
Vss
DQ24
DQ25
DQ26
DQ27
Vcc
DQ28
DQ29
DQ30
DQ31
Vss
NC
NC
NC
SDA
SCL
Vcc
PIN
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
Symbol
Vss
DQ32
DQ33
DQ34
DQ35
Vcc
DQ36
DQ37
DQ38
DQ39
DQ40
Vss
DQ41
DQ42
DQ43
DQ44
DQ45
Vcc
DQ46
DQ47
NC
NC
Vss
NC
NC
Vcc
NC
/CAS4
PIN
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Symbol
/CAS5
NC
NC
Vss
A1
A3
A5
A7
A9
A11
NC
Vcc
NC
NC
Vss
NC
NC
/CAS6
/CAS7
NC
Vcc
NC
NC
NC
NC
Vss
DQ48
DQ49
PIN
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Symbol
DQ50
DQ51
Vcc
DQ52
NC
NC
NC
Vss
DQ53
DQ54
DQ55
Vss
DQ56
DQ57
DQ58
DQ59
Vcc
DQ60
DQ61
DQ62
DQ63
Vss
NC
NC
SA0
SA1
SA2
Vcc
l
l
A13, /RAS1, /RAS3, CB, SA, SCL, SDA pins are not used in this module.
A12 is used for only HMD16M64D16EVA (8k Ref)
URL:
www.hbe.co.kr
REV.1.0 (August.2002)
-2-
HANBit Electronics Co.,Ltd.
HANBiT
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
SYMBOL
V
IN ,OUT
Vcc
P
D
T
STG
HMD16M64D16EV
RATING
-0.5V to 4.6V
-0.5V to 4.6V
16W
-55oC to 150oC
Short Circuit Output Current
I
OS
50mA
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Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
( Voltage reference to V
SS
, TA=0 to 70 o C )
PARAMETER
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
SYMBOL
Vcc
Vss
V
IH
V
IL
MIN
3.0
0
2.0
-0.3
TYP.
3.3
0
-
-
MAX
3.6
0
Vcc+0.3
0.8
UNIT
V
V
V
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
HMD16M64D16EVA
(8K REF)
SYMBOL
SPEED
MIN
MAX
-5
I
CC1
-6
I
CC2
I
CC3
-6
-5
I
CC4
-6
I
CC5
I
CC6
-6
I
l(L)
I
O(L)
V
OH
V
OL
URL:
www.hbe.co.kr
REV.1.0 (August.2002)
HMD16M64D16EV
(4K REF)
UNITS
MIN
-
MAX
1920
1760
-
-
32
1920
1760
-
1760
1600
-
-
8
1920
1760
-10
-5
-
2.4
-
10
5
-
0.4
mA
mA
MA
mA
mA
mA
mA
MA
mA
mA
µA
µA
V
V
-
1400
1280
Don't care
-5
-
-
32
1400
1280
-
1600
1440
Don't care
-5
-
-
8
1440
1280
10
5
2.4
-
10
5
0.4
-4-
HANBit Electronics Co.,Ltd.
HANBiT
HMD16M64D16EV
I
CC1
: Operating Current * (/RAS , /CAS , Address cycling @t
RC
=min.)
I
CC2
: Standby Current ( /RAS=/CAS=V
IH
)
I
CC3
: /RAS Only Refresh Current * ( /CAS=V
IH
, /RAS, Address cycling @t
RC
=min )
I
CC4
: EDO Mode Current * (/RAS=V
IL
, /CAS, Address cycling @t
PC
=min )
I
CC5
: Standby Current (/RAS=/CAS=Vcc-0.2V )
I
CC6
: /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t
RC
=min )
I
IL
: Input Leakage Current (Any input 0V
≤
V
IN
≤
4.5V, all other pins not under test = 0V)
I
OL
: Output Leakage Current (Data out is disabled, 0V
≤
V
OUT
≤
3.3V
V
OH
: Output High Voltage Level (I
OH
= -2mA )
V
OL
: Output Low Voltage Level (I
OL
= 2mA )
* NOTE: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the
output open. I
CC
is specified as an average current. In I
CC1
and I
CC3
, address cad be changed maximum once
while /RAS=V
IL
. In I
CC4
, address can be changed maximum once within one page mode cycle.
o
CAPACITANCE
( T
A
=25 C, Vcc = 3.3V, f = 1Mz )
SYMBOL
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ1
o
DESCRIPTION
Input Capacitance (A0-A11)
Input Capacitance (/WE0,/WE2,/OE0,/OE2)
Input Capacitance (/RAS0,/RAS2)
Input Capacitance (/CAS0-/CAS7)
Input/Output Capacitance (DQ0-63)
MIN
-
-
-
-
-
MAX
90
66
66
24
17
UNITS
pF
pF
pF
pF
pF
AC CHARACTERISTICS
( 0 C
≤
T
A
≤
70oC , Vcc = 3V±10%, See notes 1,2.)
-5
-6
UNIT
MIN
MAX
MIN
104
153
50
13
25
3
3
3
1
30
50
8
38
8
-5-
STANDARD OPERATION
Random read or write cycle time
Read-modify-write cycle time
Access time from /RAS
Access time from /CAS
Access time from column address
/CAS to output in Low-Z
/OE to output in Low-Z
Output buffer turn-off delay from /CAS
Transition time (rise and fall)
/RAS precharge time
/RAS pulse width
/RAS hold time
/CAS hold time
/CAS pulse width
URL:
www.hbe.co.kr
REV.1.0 (August.2002)
SYMBOL
MAX
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
84
128
ns
ns
60
15
30
ns
ns
ns
ns
ns
13
50
ns
ns
ns
10K
ns
ns
ns
10K
ns
3
3
13
50
3
1
40
10K
60
10
40
10K
10
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