HANBit
HMD4M72D18G
32Mbyte(4Mx72) Fast Page Mode 4K Ref. 5V, DIMM 168 pin
Part No. HMD4M72D18G
GENERAL DESCRIPTION
The HMD4M72D18G is a 4Mx72bits Dynamic RAM high density memory module. The HMD4M72D18G consists of
eighteen CMOS 4Mx4bits DRAMs in SOJ/TSOPІІ 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or
0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The HMD4M72D18 is a Dual In-line
Memory Module and is intended for mounting into 168 pin edge connector sockets
FEATURES
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Part Identification
HMD4M72D18G --- 4KCycles/64ms Ref, Gold Plate Lead
-6
SPEED
-5
PERFORMANCE RANGE
t
RAC
50ns
60ns
t
CAC
18ns
20ns
t
RC
90ns
110ns
t
HPC
35ns
40ns
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High-density 32MByte design
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New JEDEC standard proposal without buffer
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CAS-before-RAS Refresh capability
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RAS-only and Hidden refresh capability
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Single +5± 0.5V power supply
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Fast Page mode operation.
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LVTTL compatible inputs and outputs
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FR4-PCB design
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Access times : 50, 60ns
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Timing
50ns access
60ns access
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Packages
168-pin DIMM
D
-5
-6
PIN NAMES
Pin Name
A0-A11
A0-A12
/W0,/W2
/OE0,/OE2
Function
Address Input (4k ref)
Address Input (8k ref)
Read/Write Enable
Output Enable
Pin Name
/RAS0, /RAS2
/CAS0 - /CAS7
SCL
DU
Function
Row Address Strobe
Column Address Strobe
Serial Clock
Don't use
Pin Name
Vss
NC
Vcc
SDA
Function
Ground
No Connection
Power (+5V)
Serial
/Data I/O
SA0
–
SA2
Address in EEPROM
CB0 - CB7
Check Bit
DQ0-DQ63
Data In/Out
Address
URL:www.hbe.co.kr
REV. 1.0 (August.2002)
-1-
HANBit Electronics Co.,Ltd.
HANBit
PIN ASSIGNMENT
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Symbol
Vss
DQ0
DQ1
DQ2
DQ3
Vcc
DQ4
DQ5
DQ6
DQ7
DQ8
Vss
DQ9
DQ10
DQ11
DQ12
DQ13
Vcc
DQ14
DQ15
CB0
CB1
Vss
NC
NC
Vcc
/W0
/CAS0
PIN
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
Symbol
/CAS1
/RAS0
/OE0
Vss
A0
A2
A4
A6
A8
A10
NC
Vcc
Vcc
NC
Vss
/OE2
/RAS2
/CAS2
/CAS3
/W2
Vcc
NC
NC
CB2
CB3
Vss
DQ16
DQ17
PIN
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Symbol
DQ18
DQ19
Vcc
DQ20
NC
NC
NC
Vss
DQ21
DQ22
DQ23
Vss
DQ24
DQ25
DQ26
DQ27
Vcc
DQ28
DQ29
DQ30
DQ31
Vss
NC
NC
NC
SDA
SCL
Vcc
PIN
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
Symbol
Vss
DQ32
DQ33
DQ34
DQ35
Vcc
DQ36
DQ37
DQ38
DQ39
DQ40
Vss
DQ41
DQ42
DQ43
DQ44
DQ45
Vcc
DQ46
DQ47
CB4
CB5
Vss
NC
NC
Vcc
NC
/CAS4
PIN
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
HMD4M72D18G
Symbol
/CAS5
/RAS1
NC
Vss
A1
A3
A5
A7
A9
A11
NC
Vcc
NC
NC
Vss
NC
/RAS3
/CAS6
/CAS7
NC
Vcc
NC
NC
CB6
CB7
Vss
DQ48
DQ49
PIN
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Symbol
DQ50
DQ51
Vcc
DQ52
NC
NC
NC
Vss
DQ53
DQ54
DQ55
Vss
DQ56
DQ57
DQ58
DQ59
Vcc
DQ60
DQ61
DQ62
DQ63
Vss
NC
NC
SA0
SA1
SA2
Vcc
URL:www.hbe.co.kr
REV. 1.0 (August.2002)
-2-
HANBit Electronics Co.,Ltd.
HANBit
FUNCTIONAL BLOCK DIAGRAM
CB0-7
DQ 0-63
/CAS
/RAS0
HMD4M72D18G
/OE0
/CAS
/RAS
/OE
/W
/CAS
/RAS
/OE
/W
DQ0-3
U1
A0 -A11
DQ4-7
/CAS4
/RAS2
/OE2
/CAS
/RAS
/OE
/W
/CAS
/RAS
/OE
/W
DQ32-35
U11
A0 -A11
DQ36-39
U2
A0 -A11
DQ8-11
/CAS5
U12
A0 -A11
DQ40-43
/CAS
/CAS
/RAS
/OE
/W
/CAS
/RAS
/OE
/W
/CAS
/RAS
/OE
/W
U3
A0 -A11
DQ12-15
/CAS
/RAS
/OE
/W
/CAS
/RAS
/OE
/W
/CAS
/RAS
/OE
/W
U13
A0 -A11
DQ44-47
U4
A0 -A11
CB0-3
U14
A0 -A11
CB4-7
U5
A0 -A11
DQ16-19
/CAS6
U15
A0 -A11
DQ48-51
/CAS2
/CAS
/RAS
/OE
/W
/CAS
/RAS
/OE
/W
U6
A0 -A11
DQ20-23
/CAS
/RAS
/OE
/W
/CAS
/RAS
/OE
/W
U15
A0 -A11
DQ52-55
U7
A0 -A11
DQ24-27
/CAS7
U16
A0 -A11
DQ56-59
/CAS3
/CAS
/RAS
/OE
/W
/CAS
/RAS
/OE
/W
U8
A0 -A11
DQ28-31
/CAS
/RAS
/OE
/W
/CAS
/RAS
/OE
/W
U17
A0 -A11
DQ60-63
A0 -A11
/WE2
U9
A0 -A11
U18
/WE0
A(0:11)
Vcc
Vs
0.1uF or 0.22uF
Capacitor
for each DRAM
To all DRAMs
HANBit Electronics Co.,Ltd.
URL:www.hbe.co.kr
REV. 1.0 (August.2002)
-3-
HANBit
HMD4M72D18G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
SYMBOL
V
IN ,OUT
Vcc
P
D
T
STG
RATING
-0.5V to 4.6V
-0.5V to 4.6V
18W
-55oC to 150oC
Short Circuit Output Current
I
OS
50mA
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Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
( Voltage reference to V
SS
, TA=0 to 70 o C )
PARAMETER
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
SYMBOL
Vcc
Vss
V
IH
V
IL
MIN
4.5
0
2.4
-1.0
TYP.
5..
0
-
-
MAX
5.5
0
Vcc+1
0.8
UNIT
V
V
V
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
HMD4M72D18EG
(4K REF)
SYMBOL
SPEED
MIN
MAX
I
CC1
-5
-6
I
CC2
I
CC3
Don't care
-5
-6
I
CC4
-5
-6
I
CC5
I
CC6
Don't care
-5
-6
Icc7
Iccs
L
L
-
-
-
-
-
-
1980
1800
18
1980
1800
1620
1440
9
1980
1800
4500
3600
UNITS
mA
mA
MA
mA
mA
mA
mA
MA
mA
mA
µA
µA
I
CC1
: Operating Current * (/RAS , /CAS , Address cycling @t
RC
=min.)
I
CC2
: Standby Current ( /RAS=/CAS=V
IH
)
I
CC3
: /RAS Only Refresh Current * ( /CAS=V
IH
, /RAS, Address cycling @t
RC
=min )
URL:www.hbe.co.kr
REV. 1.0 (August.2002)
-4-
HANBit Electronics Co.,Ltd.
HANBit
I
CC4
: Fast Page Mode Current * (/RAS=V
IL
, /CAS, Address cycling @t
PC
=min )
I
CC5
: Standby Current (/RAS=/CAS=Vcc-0.2V )
I
CC6
: /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t
RC
=min )
I
IL
: Input Leakage Current (Any input 0V
≤
V
IN
≤
4.5V, all other pins not under test = 0V)
I
OL
: Output Leakage Current (Data out is disabled, 0V
≤
V
OUT
≤
3.3V
V
OH
: Output High Voltage Level (I
OH
= -2mA )
V
OL
: Output Low Voltage Level (I
OL
= 2mA )
HMD4M72D18G
* NOTE: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the
output open. I
CC
is specified as an average current. In I
CC1
and I
CC3
, address cad be changed maximum once
while /RAS=V
IL
. In I
CC4
, address can be changed maximum once within one page mode cycle.
CAPACITANCE
( T
A
=25 C, Vcc = 5V, f = 1Mz )
SYMBOL
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ1
MIN
-
-
-
-
-
MAX
20
20
73
20
17
UNITS
pF
pF
pF
pF
pF
o
DESCRIPTION
Input Capacitance (A0-A11)
Input Capacitance (/W0,/W1,/OE0,/OE2)
Input Capacitance (/RAS0,/RAS2)
Input Capacitance (/CAS0-/CAS7)
Input/Output Capacitance (DQ0-63)
AC CHARACTERISTICS
( 0 C
≤
T
A
≤
70oC , Vcc = 5V±10%, See notes 1,2.)
-5
-6
UNIT
MIN
MAX
MIN
104
140
50
13
25
3
3
3
2
30
50
13
38
8
20
10K
37
10K
13
50
3
3
3
2
40
60
15
45
10
20
10K
45
10K
13
50
60
15
30
MAX
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
84
116
o
STANDARD OPERATION
Random read or write cycle time
Read-modify-write cycle time
Access time from /RAS
Access time from /CAS
Access time from column address
/CAS to output in Low-Z
/OE to output in Low-Z
Output buffer turn-off delay from /CAS
Transition time (rise and fall)
/RAS precharge time
/RAS pulse width
/RAS hold time
/CAS hold time
/CAS pulse width
/RAS to /CAS delay time
URL:www.hbe.co.kr
REV. 1.0 (August.2002)
SYMBOL
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
-5-
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