HANBit
HMF1M32F8
Flash-ROM Module 4MByte (1Mx32Bit), 100Pin-MMC, 5.5V Design
Part No. HMF1M32F8
GENERAL DESCRIPTION
The HMF1M32F8 is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a
x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 100-pin stackable type, double -sided, FR4-
printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2 , /CE_LL2) are used to
enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and
output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL -
compatible.
FEATURES
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Access time: 55, 70, 90, 120ns
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High-density 4MByte design
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High-reliability, low-power design
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Single + 5V
±
0.5V power supply
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Easy memory expansion
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All in/outputs are TTL-compatible
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FR4-PCB design
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100-pin Designed by
50-pin Fine Pitch Connector
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Minimum 1,000,000 write/erase cycle
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Sector erases architecture
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Sector group protection
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Temporary sector group unprotection
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
-55
-70
-90
-120
18
19
20
90ns access
120ns access
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Packages
100-pin SMM
F
21
22
23
24
25
URL:
www.hbe.co.kr
REV.02 (August,2002)
PIN ASSIGNMENT
P1
Symbol
Vcc
NC
/CE_LL1
/CE_LM1
DQ15
DQ14
DQ13
Vss
DQ12
DQ11
DQ10
DQ8
Vss
DQ6
DQ4
DQ3
DQ2
Vss
DQ1
DQ0
A0
A1
A2
A3
Vcc
PIN
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
Symbol
Vcc
/CE_LL2
/CE_LM2
A18
A17
A16
A15
Vss
A14
A13
DQ9
DQ7
Vss
DQ5
A12
A11
A10
Vss
A9
A8
A7
A6
A5
A4
Vcc
PIN
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
Symbol
Vcc
NC
/CE_UM1
/CE_UU1
DQ31
DQ30
DQ29
Vss
/OE
/WE
NC
NC
Vss
NC
NC
DQ28
DQ27
Vss
DQ26
DQ25
DQ24
DQ23
Vss
NC
Vcc
P2
PIN
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
Symbol
Vcc
/CE_UM2
/CE_UU2
DQ22
DQ21
DQ20
DQ19
Vss
DQ18
DQ17
DQ16
NC
Vss
NC
NC
NC
NC
Vss
NC
NC
NC
NC
Vss
NC
Vcc
OPTIONS
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Timing
55ns access
70ns access
MARKING
1
HANBit Electronics Co., Ltd.
HANBit
FUNCTIONAL BLOCK DIAGRAM
HMF1M32F8
32
DQ 0-DQ31
A0-18
A0-A18
19
A0-18
A0-18
DQ0-7
DQ0-7
DQ0-7
/WE
/OE
/CE
/CE-LL2
DQ0-7
/
WE
/OE
U1
/CE
U5
/CE-LL1
A0-18
/WE
/OE
/CE
/CE-LM1
DQ8-15
A0-18
DQ0-7
/WE
/OE
/CE
/CE-LM2
DQ8-15
DQ0-7
U2
U6
A0-18
DQ 0-7
/WE
/OE
/CE
/CE-UM1
DQ16-23
A0-18
DQ0-7
/WE
/OE
/CE
/CE-UM2
DQ16-23
U3
U7
A0-18
/
WE
/OE
DQ0-7
DQ24-31
A0-18
/
WE
/
OE
DQ0-7
/WE
/OE
/CE
DQ24-31
/WE
/OE
/CE
U4
U8
/CE-UU1
/CE-UU2
URL:
www.hbe.co.kr
REV.02 (August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE: X means don’t care
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Q
D
HMF1M32F8
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Power Dissipation
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
P
D
T
STG
RATING
-2.0V to +7.0V
-2.0V to +7.0V
8W
-65oC to +125oC
Operating Temperature
T
A
-55oC to +125oC
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Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the
device.
This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for
extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±5%
device Supply Voltages
Vcc for
±
10% device Supply Voltages
Ground
SYMBOL
V
CC
Vcc
V
SS
MIN
4.75V
4.5V
0
0
TYP.
MAX
5.25V
5.5V
0
DC AND OPERATING CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V )
PARAMETER
Input Load Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc Active Current for Read(1)
Vcc Active Current for Program
or Erase(2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
URL:
www.hbe.co.kr
REV.02 (August,2002)
TEST CONDITIONS
Vcc=Vcc max, V
IN
= V
SS
to Vcc
Vcc=Vcc max, V
OUT
= V
SS
to Vcc
I
OH
= -2.5mA, Vcc = Vcc min
I
OL
= 12mA, Vcc =Vcc min
/CE = V
IL
, /OE=V
IH
,
/CE = V
IL
, /OE=V
IH
/CE= V
IH
SYMBOL
I
L1
I
L0
V
OH
V
OL
I
CC1
I
CC2
I
CC3
V
LKO
MIN
MAX
±1.0
±1.0
UNITS
µA
µA
V
2.4
0.45
30
40
1.0
3.2
4.2
V
mA
mA
mA
V
3
HANBit Electronics Co., Ltd.
HANBit
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V
IH
.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
HMF1M32F8
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
MIN.
Sector Erase Time
Byte Programming Time
Chip Programming Time
-
-
-
LIMITS
TYP.
1
7
3.6
MAX.
8
300
10.8
sec
µs
sec
Excludes 00H programming
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
UNIT
COMMENTS
CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
o
TEST SETUP
V
IN
= 0
V
OUT
= 0
V
IN
= 0
TYP.
6
8.5
7.5
MAX
7.5
12
9
UNIT
pF
pF
pF
Notes
: Test conditions T
A
= 25 C, f=1.0 MHz.
AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETER
SYMBOLS
JEDEC STANDARD
T
AVAV
T
AVQV
T
ELQV
T
GLQV
T
EHQZ
T
GHQZ
T
AXQX
Notes
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
QH
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From
Addresses,
/CE or /OE, Whichever Occurs
First
/CE = V
IL
/OE = V
IL
/OE = V
IL
Min
Max
Max
Max
Max
DESCRIPTION
TEST SETUP
-55
55
55
55
30
18
18
Min
0
Speed Options
-70
70
70
70
30
20
20
0
-90
90
90
90
35
20
20
0
-120
120
120
120
50
30
30
0
ns
ns
ns
ns
ns
ns
ns
UNIT
:
Test Conditions
Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF
Input rise and fall times : 5 ns, In case of 55ns-5ns
Input pulse levels : 0.45V to 2.4V, In case of 55ns- 0.0V-3.0V
URL:
www.hbe.co.kr
REV.02 (August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
Timing measurement reference level
Input : 0.8V, Incase of 55ns-1.5V
Output : 2.0V, In case of 55ns-1.5V
5.0V
HMF1M32F8
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
u
Erase/Program Operations
PARAMETER
SYMBOLS
JEDEC
T
AVAV
T
AVWL
T
WLAX
T
DVWH
T
WHDX
STANDARD
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
T
GHWL
t
GHWL
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before
Write
T
ELWL
T
WHEH
T
WLWH
t
WHWL
t
WHWH1
t
WHWH2
t
CS
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
t
VCS
URL:
www.hbe.co.kr
REV.02 (August,2002)
Speed Options
DESCRIPTION
-55
Min
Min
Min
Min
Min
Min
Min
40
25
45
30
0
0
0
55
-70
70
0
45
45
50
50
-90
90
-120
120
ns
ns
ns
ns
ns
ns
ns
UNIT
/CE Setup Time
/CE Hold Time
Write Pulse Width
Write Pulse Width High
Byte Programming Operation
Sector Erase Operation (Note1)
Vcc set up time
Min
Min
Min
Min
Typ
Typ
Min
30
35
0
0
45
20
7
1
50
50
ns
ns
ns
ns
µs
sec
µs
HANBit Electronics Co., Ltd.
5
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