HANBit
HMF1M32M4V
Flash-ROM Module 4MByte (1Mx32Bit), 72Pin-SIMM, 3.3V Design
Part No. HMF1M32M4V
GENERAL DESCRIPTION
The HMF1M32M4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a
x32bit configuration. The module consists of four 1M x 8bit FROM mounted on a 72 -pin, single -sided, FR4-printed circuit
board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Four chip enable inputs, (/CE_1L, /CE_1H) are used to enable the module
’s
8 bits independently. Output enable (/OE) and
write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single + 3.3V DC power supply and all inputs and outputs are TTL-
compatible.
PIN ASSIGNMENT
FEATURES
PIN
Symbol
Vss
/RESET
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
Vcc
DQ7
/CE_1L
NC(/CE_2L)
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
NC
NC
DQ16
PIN
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Symbol
DQ17
DQ18
DQ19
DQ20
DQ21
Vcc
DQ22
DQ23
/CE_1H
NC(/CE_2H
)
DQ24
DQ25
DQ26
DQ27
Vss
DQ28
DQ29
DQ30
DQ31
NC
NC
Vcc
A19
/OE
PIN
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
/WE
A18
A17
A16
A15
A14
A13
A12
A11
A10
Vcc
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
NC(A20)
NC(A21)
Vss
w
Access time : 70, 80, 90, 120ns
w
High-density 4MByte design
w
High-reliability, low-power design
w
Single + 3.3V
±
0.3V power supply
w
Easy memory expansion
w
All inputs and outputs are TTL-compatible
w
FR4-PCB design
w
Low profile 72-pin SIMM
w
Minimum 1,000,000 write/erase cycle
w
Sectors erase architecture
w
Sector group protection
w
Temporary sector group unprotection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
OPTIONS
w
Timing
70ns access
80ns access
90ns access
120ns access
w
Packages
72-pin SIMM
MARKING
-70
-80
-90
-120
15
16
17
18
19
20
21
22
M
23
24
URL:www.hbe.co.kr
REV.02 (August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ31
A1
–
A19
A0
/CE_1L
32
21
HMF1M32M4V
A0-A18
DQ15/A-1
/CE
/OE
/WE
RY-BY
/RESET
DQ 0-7
U1
A0-18
DQ15/A-1
/CE_1L
/CE
/OE
DQ 8-15
/
WE
RY-BY
U2
/
RESET
A0-18
DQ15/A-1
/CE_1H
/CE
DQ16-23
/
OE
/WE
RY-BY
/RESET
U3
A0-18
DQ15/A-1
/CE_1H
/OE
/CE
/OE
/WE
RY-BY
/RESET
DQ24-31
/
WE
U4
/
RESET
URL:www.hbe.co.kr
REV.02 (August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE:
X means don’t care
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
/RESET
Vcc±0.3V
H
H
H
HMF1M32M4V
DQ ( /BYTE=L )
HIGH-Z
HIGH-Z
D
OUT
D
IN
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Power dissipation
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
PD
T
STG
RATING
-0.5V to Vcc+0.5V
-0.5V to +4.0V
4W
-65oC to +150oC
Operating Temperature
T
A
-55oC to +125 oC
w
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±
10% device Supply Voltages
Ground
SYMBOL
Vcc
V
SS
MIN
2.7V
0
0
TYP.
MAX
3.6V
0
DC AND OPERATING CHARACTERISTICS
( 0oC
≤
TA
≤
70 oC )
PARAMETER
Input Load Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc Active Read Current (1)
/OE = V
IH
,
Vcc Active Write Current (2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V
IH
.
/CE = V
IL
, /OE=V
IH
/CE, /RESET=Vcc±0.3V
1MHZ
I
CC2
I
CC3
V
LKO
TEST CONDITIONS
Vcc=Vcc max, V
IN
= VSS to Vcc
Vcc=Vcc max, V
OUT
= VSS to Vcc
I
OH
= -2.0mA, Vcc = Vcc min
I
OL
= 4.0mA, Vcc =Vcc min
/CE = V
IL
,
5MHZ
I
CC1
8(Tpy)
60(Tpy)
0.8(Tpy)
2.3
16
120
20.0
2.5
mA
µA
V
SYMB
OL
I
L1
I
L0
0.85 x
V
OH
Vcc
V
OL
28(Tpy)
0.45
36
mA
V
V
MIN
MAX
±1.0
±1.0
UNIT
µA
µA
URL:www.hbe.co.kr
REV.02 (August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
HMF1M32M4V
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time
-
-
-
TYP.
0.7
24
9
9
300
27
MAX.
15
sec
sec
µs
sec
Excludes system-level
overhead
Excludes 00H programming
prior to erasure
UNIT
COMMENTS
TSOP CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
TEST SETUP
V
IN
= 0
V
OUT
= 0
V
IN
= 0
TYP.
6
8.5
7.5
MAX
7.5
12
9
UNIT
pF
pF
pF
Notes
: Test conditions T
A
= 25
o
C, f=1.0 MHz.
AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETER
SYMBOLS
DESCRIPTION
JEDEC STANDARD
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
QH
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
/CE = V
IL
/OE = V
IL
/OE = V
IL
Min
Max
Max
Max
Max
Max
Min
TEST SETUP
-70R
70
70
70
30
25
25
-80
80
80
80
30
25
25
0
-90
90
90
90
35
30
30
-120
120
120
120
50
30
30
ns
ns
ns
ns
ns
ns
ns
Speed Options
UNIT
TEST SPECIFICATIONS
TEST CONDITION
Output load
Output load capacitance,C
L
(Including jig capacitance)
Input rise and fall times
Input pulse levels
URL:www.hbe.co.kr
REV.02 (August,2002)
70R, 80
1TTL gate
30
5
0.0-3.0
90, 120
UNIT
100
pF
ns
V
4
HANBit Electronics Co., Ltd.
HANBit
Input timing measurement reference levels
Output timing measurement reference levels
1.5
1.5
HMF1M32M4V
V
V
3.0V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
u
Erase/Program Operations
PARAMETER SYMBOLS
DESCRIPTION
JEDEC
t
AVAV
t
AVWL
t
WLAX
t
DVWH
t
WHDX
STANDARD
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
Write
t
CS
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
t
VCS
/CE Setup Time
/CE Hold Time
Write Pulse Width
Write Pulse Width High
Byte Programming Operation
Sector Erase Operation (Note1)
Vcc set up time
Min
Min
Min
Min
Typ
Typ
Min
35
35
30
9
0.7
50
0
0
35
50
ns
ns
ns
ns
µs
sec
µs
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recovery Time Before
Min
Min
Min
Min
Min
Min
Min
45
35
45
35
0
0
0
ns
70R
70
80
80
0
45
45
50
50
90
90
120
120
ns
ns
ns
ns
ns
ns
Speed Options
UNIT
Notes
: 1 . This does not include the preprogramming time
2 . This timing is only for Sector Protect operations
URL:www.hbe.co.kr
REV.02 (August,2002)
5
HANBit Electronics Co., Ltd.
微控制器 MCU
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