HANBit
HMF1M64F4V
FLASH-ROM MODULE 8MByte (1M x 64-Bit) ,120PIN SMM,3.3V
Part No. HMF1M64F4V
GENERAL DESCRIPTION
The HMF1M64F4V is a high-speed flash read only memory (FROM) module containing 262,144 words organized in an
x64bit configuration. The module consists of four 1M x 16 FROM mounted on a 120-pin, SMM connector FR4-printed circuit
board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTL-
compatible
FEATURES
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Access time : 80, 90, 120ns
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High-density 8MByte design
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High-reliability, low-power design
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Single + 3V
±
0.3V power supply
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Easy memory expansion
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Hardware reset pin(RESET#)
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FR4-PCB design
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120-Pin Designed by 60-Pin Fine Pitch Connector P1,P2
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Minimum 1,000,000 write cycle guarantee per sector
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20-year data retention at 125 oC
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Flexible sector architecture
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Embedded algorithms
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Erase suspend / Erase resume
OPTIONS
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Timing
80ns access
90ns access
120ns access
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Packages
120-pin SMM
MARKING
-80
-90
-120
F
URL :
www.hbe.co.kr
REV.02(August,2002)
1
HANbit Electronics Co., Ltd.
HANBit
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE:
X means don’t care
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
/RESET
Vcc±0.3V
H
H
H
HMF1M64F4V
DQ ( /BYTE=L )
HIGH-Z
HIGH-Z
D
OUT
D
IN
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
T
STG
RATING
-0.5V to Vcc+0.5V
-0.5V to +4.0V
-65oC to +150oC
Operating Temperature
T
A
-40oC to +85oC
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Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at th ese or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±
10% device Supply Voltages
Ground
SYMBOL
Vcc
V
SS
MIN
2.7V
0
TYP.
3.0
0
MAX
3.6V
0
DC AND OPERATING CHARACTERISTICS
( 0oC
≤
TA
≤
70 oC )
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc Active Read Current (1)
/OE = V
IH
,
Vcc Active Write Current (2)
Vcc Standby Current (3)
Low Vcc Lock-Out Voltage
Notes:
/CE = V
IL
, /OE=V
IH
/CE, /RESET=Vcc±0.3V
1MHZ
I
CC2
I
CC3
V
LKO
TEST CONDITIONS
Vcc=Vcc max, V
IN
= GND to Vcc
Vcc=Vcc max, V
OUT
= GND to Vcc
I
OH
= -2.0mA, Vcc = Vcc min
I
OL
= 4.0mA, Vcc =Vcc min
/CE = V
IL
,
5MHZ
I
CC1
-
-
-
2.3
16
120
20
2.5
mA
µA
V
SYMBOL
I
L1
I
L0
V
OH
V
OL
MIN
-1.0
-1.0
0.85x Vcc
-
-
MAX
1.0
1.0
-
0.4
64
mA
UNIT
µA
µA
V
V
1. The Icc current listed includes both the DC operating current and the frequent component (at 5MHz).
2. Icc active while embedded algorithm (program or erase) is in progress
3. Icc active while Embedded Erase or Embedded Program is in progress.
4. Not 100% tested
URL :
www.hbe.co.kr
REV.02(August,2002)
4
HANbit Electronics Co., Ltd.
HANBit
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Block Erase Time
Chip Erase Time
Word Programming Time
Chip Programming Time
-
-
-
TYP.
0.7
25
11
12
360
36
MAX.
15
sec
sec
µs
sec
UNIT
HMF1M64F4V
COMMENTS
Excludes 00H programming
prior to erasure
Excludes system-level
overhead
TSOP CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
TEST SETUP
V
IN
= 0
V
OUT
= 0
V
IN
= 0
MIN
-
-
-
MAX
7.5
12
9
UNIT
pF
pF
pF
Notes
: Capacitance is periodically sampled and not 100% tested.
TEST SPECIFICATIONS
TEST CONDITION
Output load
Input rise and fall times
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
VALUE
1TTL gate
5
0 to 3
1.5
1.5
ns
V
V
V
UNIT
5.0V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
URL :
www.hbe.co.kr
REV.02(August,2002)
5
HANbit Electronics Co., Ltd.
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