HANBit
HMF25664F4VSP
FLASH-ROM MODULE 2MByte (256K x 64-Bit) ,120PIN SMM,3.3V
Part No. HMF25664F4VSP
GENERAL DESCRIPTION
The HMF25664F4VSPis a high-speed flash read only memory (FROM) module containing 262,144 words organized in an
x64bit configuration. The module consists of four 256K x 16 FROM mounted on a 120-pin, SMM connector FR4-printed circuit
board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTL-
compatible
PIN ASSIGNMENT
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Symbol
Vcc
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
Vcc
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
Vcc
NC
A0
A16
/WE1
/WE2
Vcc
/OE
/RESET
/WE0
/RY_BY
Vcc
FEATURES
w
Access time : 90,100 and 120ns
w
High-density 2MByte design
w
High-reliability, low-power design
w
Single + 3V
±
0.3V power supply
w
Easy memory expansion
w
Hardware reset pin(RESET#)
w
FR4-PCB design
w
120-Pin Designed
Connector P1,P2
w
Minimum 100,000 write cycle guarantee per
sector
w
20-year data retention at 125 oC
w
Flexible sector architecture
w
Embedded algorithms
w
Erase suspend / Erase resume
by 60-Pin Fine Pitch
P1
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Symbol
Vcc
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
Vcc
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
Vcc
A1
A2
A3
A4
A5
Vcc
A6
A7
A8
A9
Vcc
PIN
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
Symbol
Vss
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Vss
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
Vss
A10
A11
A12
A13
A14
Vss
A15
A17
NC
NC
Vss
P2
PIN
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
Symbol
Vss
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
Vss
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
Vss
NC
/BANK0
Vss
/BYTE
/WE3
Vss
NC
NC
NC
NC
Vss
OPTIONS
w
Timing
90ns access
100ns access
120ns access
w
Packages
120-pin SMM
MARKING
-90
-100
-120
F
URL:
www.hbe.co.kr
REV.02(August,2002)
1
HANbit Electronics Co., Ltd.
HANBit
FUNCTIONAL BLOCK DIAGRAM
HMF25664F4VSP
DQ0
–
DQ63
A0
–
A17
64
18
A(0-17)
DQ(0-15)
/
WE0
/WE
/
BYTE
/
OE
/
CE
RY-BY
/Reset
U2
A(0-17)
DQ(16-31)
/
WE1
/
WE
/OE
/CE
RY-BY
/Reset
/BYTE
U3
A(0-17)
DQ(32-47)
/
WE2
/
WE
/OE
/BYTE
/
CE
RY-BY
/Reset
U1
A(0-17)
DQ(48-63)
/
WE3
/OE
/WE
/BYTE
/
OE
/
CE
RY-BY
/BANK0
RY_/BY
/RESET
/BYTE
U4
/
Reset
URL:
www.hbe.co.kr
REV.02(August,2002)
2
HANbit Electronics Co., Ltd.
HANBit
TRUTH TABLE
HMF25664F4VSP
DQ8-DQ15
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE: X means don’t care
/OE
X
H
L
H
/CE
Vcc± 0.3
L
L
L
/WE
X
H
H
L
/RESET
Vcc± 0.3
H
H
H
DQ0-DQ7
/BYTE=V
IH
HIGH-Z
HIGH-Z
Dout
Din
HIGH-Z
HIGH-Z
Dout
Din
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
T
STG
RATING
-0.5V to VCC+0.5V
-0.5V to +4.0V
-65oC to +150oC
Operating Temperature
T
A
-55Oc to +125 oC
w
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for Regulated Voltages Range
Vcc for Full Voltages Range
Ground
SYMBOL
V
CC
Vcc
V
SS
MIN
3.0V
2.7V
0
0
TYP.
MAX
3.6V
3.6V
0
DC AND OPERATING CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V )
PARAMETER
Input Load Current
Vcc = Vcc max
Output Leakage Current
Output High Voltage
I
OH
= -100uA, Vcc = Vcc min
Output Low Voltage
Vcc Active Current for Read(1)
Vcc Active Current for Program
or Erase(2,3)
Vcc Standby Current(3)
I
OL
= 4.0mA, Vcc =Vcc min
/CE = V
IL
, /OE=V
IH
,
/CE = V
IL
, /OE=V
IH
/CE,/RESET= V
CC
±0.3V
V
OH2
V
OL
I
CC1
I
CC2
I
CC3
7
15
0.2
Vcc=Vcc max, V
OUT
= V
SS
to Vcc
I
OH
= -2.0mA, Vcc = Vcc min
I
L0
V
OH1
0.85V
CC
V
CC
–
0.4
0.45
12
30
5
2.5
V
V
mA
mA
mA
V
TEST CONDITIONS
V
IN
=V
SS
to Vcc
I
L1
SYMBOL
MIN
MAX
±1.0
±1.0
UNITS
µA
µA
Low Vcc Lock-Out Voltage
V
LKO
2.3
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V
IH
. typical V
CC
is 3.0V.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
URL:
www.hbe.co.kr
REV.02(August,2002)
3
HANbit Electronics Co., Ltd.
HANBit
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Sector Erase Time
Byte Programming Time
Chip Programming Time
-
-
-
TYP.
0.7
9
11
MAX.
15
300
Sec
µs
Sec
UNIT
HMF25664F4VSP
COMMENTS
Excludes 00H programming
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
TEST SETUP
V
IN
= 0
V
OUT
= 0
V
IN
= 0
TYP.
6
8.5
7.5
MAX
7.5
12
9
UNIT
pF
pF
pF
Notes
: Test conditions T
A
= 25
o
C, f=1.0 MHz.
AC CHARACTERISTICS
u
Erase / Program Operations
PARAMETER SYMBOLS
DESCRIPTION
JEDEC
t
AVAV
t
AVWL
t
WLAX
t
DVWH
t
WHDX
STANDARD
Min
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
CS
t
CH
t
WP
t
WPH
t
WHWH1
t
BERS
t
VCS
t
RB
t
BUSY
Notes
: 1. Not 100% tested.
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write
/CE Setup Time
/CE Hold Time
Write Pulse Width
Write Pulse Width High
Byte Programming Operation
Block Erase Operation
Vcc Setup Time
Recovery time from RY/BY
Program/Erase Valid to RY/BY Delay
90
0
45
45
0
0
0
0
0
45
30
9
0.7
50
0
90
Max
Min
100
0
45
45
0
0
0
0
0
45
30
9
0.7
50
0
90
Max
Min
120
0
50
50
0
0
0
0
0
50
30
9
0.7
50
0
90
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
µs
ns
ns
-90
C
L
=100pF
-100
-120
UNIT
2. See the "Erase and Programming Performance" section for more Information
URL:
www.hbe.co.kr
REV.02(August,2002)
4
HANbit Electronics Co., Ltd.
HANBit
HMF25664F4VSP
3.3V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
u
Alternate /CE Controlled Erase/ Program Operations
C
L
=100pF
PARAMETER SYMBOLS
DESCRIPTION
JEDEC
t
AVAV
t
AVEL
t
ELAX
t
DVEH
t
EHDX
STANDARD
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHEL
t
WLEL
t
EHWH
t
ELEH
t
EHEL
t
GHEL
t
WS
t
WH
t
CP
t
CPH
t
BUSY
t
RB
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write
/OE High to /WE Low
/WE Hold Time
/CE Pulse Width
/CE Pulse Width High
Program/Erase Valid RY//BY Delay
Recovery Time from RY//BY
Min
90
0
45
45
0
0
0
0
0
45
30
90
0
-90
Max
Min
100
0
45
45
0
0
0
0
0
45
30
90
0
-100
Max
-120
Min
120
0
50
50
0
0
0
0
0
50
30
90
0
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNIT
Notes:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more Information .
URL:
www.hbe.co.kr
REV.02(August,2002)
5
HANbit Electronics Co., Ltd.
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