HANBit
HMF2M32F4V
Flash-ROM Module 8MByte (2Mx32Bit), 80Pin-SMM, 3.3V Design
Part No. HMF2M32F4V
GENERAL DESCRIPTION
The HMF2M32F4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a
x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4-
printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can ge t low-power
design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTL-
compatible.
FEATURES
w
Part Identification
- HMF2M32F4V : Socket 5mm
w
Access time: 70, 80, 90, 120ns
w
High-density 8MByte design
w
High-reliability, low-power design
w
Single + 3.0V
±
0.5V power supply
w
All in/outputs are LVTTL-compatible
w
FR4-PCB design
w
80-pin Designed by
40-pin Fine Pitch Connector (x 2EA)
w
Minimum 1,000,000 write/erase cycle
w
Sector erases architecture
9
10
11
/WE
A19
A8
A9
A10
Vss
A11
A12
A13
A14
A15
Vcc
29
30
31
32
33
34
35
36
37
38
39
40
PIN
1
2
3
4
5
6
7
8
Symbol
Vcc
NC
NC
NC
A20
/RY_BY
Vss
/RESET
P1
PIN
21
22
23
24
25
26
27
28
PIN ASSIGNMENT
P2
Symbol
Vcc
DQ15
DQ7
DQ14
DQ6
DQ13
Vss
DQ5
DQ12
DQ4
DQ11
DQ3
DQ10
Vss
DQ2
DQ9
DQ1
DQ8
DQ0
Vcc
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Symbol
Vcc
DQ16
DQ24
DQ17
DQ25
DQ18
Vss
DQ26
DQ19
DQ27
DQ20
DQ28
DQ21
Vss
DQ29
DQ22
DQ30
DQ23
DQ31
Vcc
PIN
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
Symbol
Vcc
NC
NC
/BYTE
/OE
/CE
Vss
A16
A0
A18
A17
A7
A6
Vss
A5
A4
A3
A2
A1
Vcc
OPTIONS
w
Timing
70ns access
80ns access
90ns access
120ns access
w
Packages
80-pin SMM
MARKING
-70
-80
-90
-120
12
13
14
15
16
17
18
19
F
20
www.hbe.co.kr
REV.02(August,2002).
1
HANBit Electronics Co., Ltd
HANBit
FUNCTIONAL BLOCK DIAGRAM
HMF2M32F4V
DQ0 - DQ31
A0
–
A19
20
32
A0-19
/WE
/OE
/CE
RY-BY
/Reset
DQ 0-15
U1
A0-19
/WE
/OE
/CE0
/CE
RY-BY
/Reset
DQ 15-31
U2
A0-19
/WE
/OE
/CE
RY-BY
/Reset
DQ 0-15
U3
A0-19
/WE
/OE
/CE1
/RY_BY
/RESET
/WE
/OE
/CE
RY-BY
/Reset
DQ 15-31
U4
www.hbe.co.kr
REV.02(August,2002).
2
HANBit Electronics Co., Ltd
HANBit
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE:
X means don’t care
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
/RESET
Vcc±0.3V
H
H
H
HMF2M32F4V
DQ ( /BYTE=L )
HIGH-Z
HIGH-Z
D
OUT
D
IN
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
T
STG
RATING
-0.5V to Vcc+0.5V
-0.5V to +4.0V
-65oC to +150oC
Operating Temperature
T
A
-55oC to +125 oC
w
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±
10% device Supply Voltages
Ground
SYMBOL
Vcc
V
SS
MIN
2.7V
0
0
TYP.
MAX
3.6V
0
DC AND OPERATING CHARACTERISTICS
( 0oC
≤
TA
≤
70 oC )
PARAMETER
Input Load Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc Active Read Current (1)
/OE = V
IH
,
Vcc Active Write Current (2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V
IH
.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
/CE = V
IL
, /OE=V
IH
/CE, /RESET=Vcc±0.3V
1MHZ
I
CC2
I
CC3
V
LKO
2.3
TEST CONDITIONS
Vcc=Vcc max, V
IN
= GND to Vcc
Vcc=Vcc max, V
OUT
= GND to Vcc
I
OH
= -2.0mA, Vcc = Vcc min
I
OL
= 4.0mA, Vcc =Vcc min
/CE = V
IL
,
5MHZ
I
CC1
4
40
8
60
60
2.5
mA
mA
V
SYMBOL
I
L1
I
L0
V
OH
V
OL
18
2.4
0.45
32
mA
MIN
MAX
±1.0
±1.0
UNIT
µA
µA
V
V
www.hbe.co.kr
REV.02(August,2002).
3
HANBit Electronics Co., Ltd
HANBit
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
MIN.
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time
-
-
-
LIMITS
TYP.
0.7
25
9
18
300
54
MAX.
15
sec
sec
µs
sec
UNIT
HMF2M32F4V
COMMENTS
Excludes 00H programming
prior to erasure
Excludes system-level
overhead
TSOP CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
TEST SETUP
V
IN
= 0
V
OUT
= 0
V
IN
= 0
MIN
6
8.5
7.5
MAX
7.5
12
9
UNIT
pF
pF
pF
Notes
: Test conditions T
A
= 25
o
C, f=1.0 MHz.
AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETER
SYMBOLS
DESCRIPTION
JEDEC STANDARD
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
QH
Read Cycle Time
Address to Output Delay
Chip Enable to Output Delay
Chip Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
/CE = V
IL
/OE = V
IL
/OE = V
IL
Min
Max
Max
Max
Max
Max
Min
TEST SETUP
-70R
70
70
70
30
25
25
-80
80
80
80
30
25
25
0
-90
90
90
90
35
30
30
-120
120
120
120
35
30
30
ns
ns
ns
ns
ns
ns
ns
Speed Options
UNIT
TEST SPECIFICATIONS
TEST CONDITION
Output load
Output load capacitance,C
L
(Including jig capacitance)
Input rise and full times
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
30
5
0.0-3.0
1.5
1.5
70R, 80
1TTL gate
100
pF
ns
V
V
V
90, 120
UNIT
www.hbe.co.kr
REV.02(August,2002).
4
HANBit Electronics Co., Ltd
HANBit
5.0V
HMF2M32F4V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
u
Erase/Program Operations
PARAMETER SYMBOLS
DESCRIPTION
JEDEC
t
AVAV
t
AVWL
t
WLAX
t
DVWH
t
WHDX
STANDARD
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
CS
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
t
VCS
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write
/CE Setup Time
/CE Hold Time
Write Pulse Width
Write Pulse Width High
Byte Programming Operation
Sector Erase Operation (Note1)
Vcc set up time
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Min
35
35
30
9
0.7
50
45
35
45
35
0
0
0
0
0
35
50
70R
70
80
80
0
45
45
50
50
90
90
120
12
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
µs
Speed Options
UNIT
Notes
: 1 . This does not include the preprogramming time
2 . This timing is only for Sector Protect operations
www.hbe.co.kr
REV.02(August,2002).
5
HANBit Electronics Co., Ltd
综合技术交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
