HANBit
HMF2M32F4VA
Flash-ROM Module 8MByte (2Mx32Bit), 80Pin-SMM, 3.3V Design
Part No. HMF2M32F4VA
GENERAL DESCRIPTION
The HMF2M32F4VA is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a
x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4-
printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can g et low-power
design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are
LVTTL-compatible.
FEATURES
PIN ASSIGNMENT
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Part Identification
- HMF2M32F4VA : Socket 5mm
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Access time: 80, 90, 120ns
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High-density 8MByte design
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High-reliability, low-power design
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Single + 3.0V
±
0.3V power supply
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All in/outputs are LVTTL-compatible
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FR4-PCB design
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80-pin Designed by
40-pin Fine Pitch Connector (x 2EA)
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Minimum 1,000,000 write/erase cycle
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Sector erases architecture
PIN
1
2
3
4
5
6
7
8
9
10
11
Symbol
Vcc
/CE0
NC
NC
NC
RY_/BY
Vss
/RESET
/WE
A19
A8
A9
A10
Vss
A11
A12
A13
A14
A15
Vcc
P1
PIN
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
Symbol
Vcc
DQ15
DQ7
DQ14
DQ6
DQ13
Vss
DQ5
DQ12
DQ4
DQ11
DQ3
DQ10
Vss
DQ2
DQ9
DQ1
DQ8
DQ0
Vcc
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Symbol
Vcc
DQ16
DQ24
DQ17
DQ25
DQ18
Vss
DQ26
DQ19
DQ27
DQ20
DQ28
DQ21
Vss
DQ29
DQ22
DQ30
DQ23
DQ31
Vcc
P2
PIN
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
Symbol
Vcc
NC
NC
/BYTE
/OE
/CE1
Vss
A16
A0
A18
A17
A7
A6
Vss
A5
A4
A3
A2
A1
Vcc
OPTIONS
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Timing
80ns access
90ns access
120ns access
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Packages
80-pin SMM
MARKING
-80
-90
-120
12
13
14
15
16
17
F
18
19
20
URL:
www.hbe.co.kr
REV.02(August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
FUNCTIONAL BLOCK DIAGRAM
HMF2M32F4VA
32
DQ31
–
DQ0
20
A0
–
A19
A(0-19)
/WE
/OE
/CE
RY-BY
/Reset
DQ(0-15)
U1
A(0-19)
DQ(16-31)
/WE
/OE
U2
/CE0
/CE
RY-BY
/Reset
A(0-19)
DQ(0-15)
/WE
/OE
/CE
RY-BY
/Reset
U3
A(0-19)
DQ(16-31)
/WE
/OE
/WE
/OE
/CE
RY-BY
/Reset
U4
/
CE1
RY_/BY
/Reset
URL:
www.hbe.co.kr
REV.02(August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE:
X means don’t care
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
/RESET
Vcc±0.3V
H
H
H
HMF2M32F4VA
DQ ( /BYTE=L )
HIGH-Z
HIGH-Z
D
OUT
D
IN
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
T
STG
RATING
-0.5V to Vcc+0.5V
-0.5V to +4.0V
-65oC to +150oC
Operating Temperature
T
A
-40oC to +85oC
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Stresses greater than those listed und er " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is n ot implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±
10% device Supply Voltages
Ground
SYMBOL
Vcc
V
SS
MIN
2.7V
0
TYP.
3.0
0
MAX
3.6V
0
DC AND OPERATING CHARACTERISTICS
( 0oC
≤
TA
≤
70 oC )
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc Active Read Current (1)
/OE = V
IH
,
Vcc Active Write Current (2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
Notes:
/CE = V
IL
, /OE=V
IH
/CE, /RESET=Vcc±0.3V
1MHZ
I
CC2
I
CC3
V
LKO
TEST CONDITIONS
Vcc=Vcc max, V
IN
= GND to Vcc
Vcc=Vcc max, V
OUT
= GND to Vcc
I
OH
= -2.0mA, Vcc = Vcc min
I
OL
= 4.0mA, Vcc =Vcc min
/CE = V
IL
,
5MHZ
I
CC1
-
-
-
2.3
16
120
20
2.5
mA
µA
V
SYMBOL
I
L1
I
L0
V
OH
V
OL
MIN
-10
-10
0.85x Vcc
-
-
MAX
1.0
1.0
-
0.45
64
mA
UNIT
µA
µA
V
V
1. The Icc current listed includes both the DC operating current and the frequent component (at 5MHz).
2. Icc active while embedded algorithm (program or erase) is in progress
3. Not 100% tested
URL:
www.hbe.co.kr
REV.02(August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Block Erase Time
Chip Erase Time
Word Programming Time
Chip Programming Time
-
-
-
TYP.
0.7
25
11
12
360
36
MAX.
15
sec
sec
µs
sec
UNIT
HMF2M32F4VA
COMMENTS
Excludes 00H programming
prior to erasure
Excludes system-level
overhead
TSOP CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
TEST SETUP
V
IN
= 0
V
OUT
= 0
V
IN
= 0
TYP.
6
8.5
7.5
MAX
7.5
12
9
UNIT
pF
pF
pF
Notes
: Capacitance is periodically sampled and not 100% tested.
TEST SPECIFICATIONS
TEST CONDITION
Output load
Input rise and full times
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
VALUE
1TTL gate
5
0 to 3
1.5
1.5
ns
V
V
V
UNIT
5.0V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
URL:
www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
AC CHARACTERISTICS
u
Read Only Operations Characteristics
SPEED
PARAMETER
DESCRIPTION
MIN
t
RC
t
ACC
t
CE
t
OE
t
DF
t
OEH
t
QH
Read Cycle Time
Address Access time
Chip Enable to Access time
Output Enable time
Chip Enable to Output High-Z
Output Enable Hold Time
Output Hold Time From Addresses,
/CE or /OE
0
0
80
80
80
30
25
0
0
- 80
MAX
MIN
90
90
90
35
30
-90
MAX
HMF2M32F4VA
-120
MIN
120
120
120
50
30
0
0
MAX
UNIT
ns
ns
ns
ns
ns
ns
ns
u
Erase/Program Operations
Alternate /WE Controlled Writes
- 80
PARAMETER
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHWL
t
CS
t
CH
t
WP
t
WPH
t
PGM
t
BERS
t
VCS
t
RB
DESCRIPTION
Write Cycle Time (1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Setup Time
Read Recover Time Before Write
/CE Setup Time
/CE Hold Time
Write Pulse Width
Write Pulse Width High
Programming Operation
Block Erase Operation (2)
Vcc set up time
Write Recover Time Before RY_/BY
0.7
50
0
MIN
80
0
45
35
0
0
0
0
0
35
30
11
-
-
-
0.7
50
0
MAX
-
-
-
-
-
-
-
-
-
-
-
MIN
90
0
45
45
0
0
0
0
0
35
30
11
-
-
-
0.7
50
0
-90
MAX
-
-
-
-
-
-
-
-
-
-
-
MIN
120
0
50
50
0
0
0
0
0
50
30
11
-
-
-
-120
MAX
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
: : 1. Not 100% tested
2 . The duration of the program or erase operation varies and is calculated in the internal algorithms.
URL:
www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
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