HANBit
HMF4M32M4GL
FLASH-ROM MODULE 16MByte (4M x 32-Bit), 72-Pin SIMM, 5V
Part No. HMF4M32M4GL
GENERAL DESCRIPTION
The HMF4M32M4GL is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a
x32bit configuration. The module consists of four 4M x 8bit FROM mounted on a 72 -pin, single-sided, FR4-printed circuit
board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Four chip enable inputs, (/WE, /WE1, /WE2, /WE3) are used to enable the module’s 8bits independently. Output enable (/OE)
and write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-
compatible.
FEATURES
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Access time : 75, 90 and 120ns
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High-density 16MByte design
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High-reliability, low-power design
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Single + 5V
±
0.5V power supply
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Easy memory expansion
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All inputs and outputs are TTL-compatible
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FR4-PCB design
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Low profile 72-pin SIMM
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Minimum 1,000,000-write/erase cycle
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Sectors erase architecture
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Sector group protection
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Temporary sector group unprotect ion
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The used device is Am29F032B
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
-75
-90
-120
19
20
90ns access
120ns access
w
Packages
72-pin SIMM
M
21
22
23
24
Vss
NC
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
Vcc
DQ7
/WE0
PIN ASSIGNMENT
SYMBOL
PIN
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
SYMBOL
DQ17
DQ18
DQ19
DQ20
DQ21
Vcc
DQ22
DQ23
/WE2
NC
DQ24
DQ25
DQ26
DQ27
Vss
DQ28
DQ29
DQ30
DQ31
/WE3
NC
/RESET
A19
/OE
PIN
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
SYMBOL
/BANK-E0
A18
A17
A16
A15
A14
A13
A12
A11
A10
Vcc
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
A20
A21
Vss
/RY_BY
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
/WE1
NC
DQ16
OPTION
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Timing
75ns access
MARKING
72-PIN SIMM
TOP VIEW
URL:
www.hbe.co.kr
REV.02(August,2002)
1
HANBit Electronics Co., Ltd.
HANBit
FUNCTIONAL BLOCK DIAGRAM
HMF4M32M4GL
DQ0 - DQ31
A0
–
A21
/WE0
22
32
A0-21
/WE
/OE
/CE
RY-BY
/Reset
DQ 0-7
U1
A0-21
/WE1
/WE
/OE
/CE
RY-BY
/Reset
DQ 8-15
U2
A0-21
/WE2
/WE
/OE
/CE
RY-BY
/Reset
DQ16-23
U3
A0-21
/WE3
/OE
/BANK-E0
/RY_BY
/Reset
DQ24-31
/WE
/OE
/CE
RY-BY
/Reset
U4
URL:
www.hbe.co.kr
REV.02(August,2002)
2
HANBit Electronics Co., Ltd.
HANBit
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE:
X means don’t care
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Q
D
HMF4M32M4GL
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
T
STG
RATING
-2.0V to +7.0V
-2.0V to +7.0V
-65oC to +150oC
Operating Temperature
T
A
-55oC to +125 oC
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Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any othe r conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±
5% device supply voltage
Vcc for
±
10% device supply voltages
Ground
SYMBOL
Vcc
Vcc
V
SS
MIN
4.75V
4.5V
0
0
TYP.
MAX
5.25V
5.5V
0
DC AND OPERATING CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 5V
±
0.5V )
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Vcc Active Current for Read(1)
Vcc Active Current for Program
/CE = V
IL
, /OE=V
IH
or Erase(2)
Vcc Standby Current
Low Vcc Lock-Out Voltage
Notes:
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V
IH
.
2. Icc active while embedded algorithm (program or erase) is in progress
URL:
www.hbe.co.kr
REV.02(August,2002)
TEST CONDITIONS
Vcc=Vcc max, V
IN
= GND to Vcc
Vcc=Vcc max, VOUT= GND to Vcc
I
OH
= -2.5mA, Vcc = Vcc min
I
OL
= 12mA, Vcc =Vcc min
/CE = V
IL
, /OE=V
IH
,
SYMBOL
I
L1
I
L0
V
OH
V
OL
I
CC1
I
CC2
I
CC3
V
LKO
MIN
MAX
±1.0
±1.0
UNITS
µA
µA
V
2.4
0.45
40
60
1.0
3.2
4.2
V
mA
mA
mA
V
/CE= V
IH
3
HANBit Electronics Co., Ltd.
HANBit
3. Maximum Icc current specifications are tested with Vcc=Vcc max
HMF4M32M4GL
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Sector Erase Time
Byte Programming Time
Chip Programming Time
-
-
-
TYP.
1
7
28.8
MAX.
Excludes 00H programming
8
300
86.4
sec
prior to erasure
µs
sec
Excludes system-level overhead
Excludes system-level overhead
UNIT
COMMENTS
TSOP CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
TEST SETUP
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
V
IN
= 0
V
OUT
= 0
V
IN
= 0
6
8.5
7.5
7.5
12
9
pF
pF
pF
MIN
MAX
UNIT
Notes
: Test conditions T
A
= 25
o
C, f=1.0 MHz.
AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETER
SYMBOLS
JEDEC
t
AVAV
t
AVQV
STANDARD
t
RC
t
ACC
Address to Output Delay
/OE = V
IL
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
CE
t
OE
t
DF
t
DF
t
QH
/CE or /OE, Whichever Occurs First
Chip Enable to Output Delay
Chip Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
Min
0
0
ns
/OE = V
IL
Max
Max
Max
Max
70
40
20
20
90
40
20
20
ns
ns
ns
ns
Read Cycle Time
/CE = V
IL
Max
70
90
ns
Min
70
90
ns
DESCRIPTION
TEST SETUP
-75
-90
UNIT
TEST SPECIFICATIONS
TEST CONDITION
Output load
Output load capacitance,
30
C
L
(Including jig capacitance)
100
pF
75
ALL OTHERS
1TTL gate
UNIT
URL:
www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
Input rise and full times
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
5
0.0 - 3.0
1.5
1.5
HMF4M32M4GL
20
0.45-2.4
0.8
2.0
ns
V
V
V
5.0V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
u
Write (Erase/Program) Operations
PARAMETER
SYMBOLS
JEDEC
t
AVAV
t
AVWL
t
WLAX
t
DVWH
t
WHDX
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHWL
t
WHWH1
t
WHWH2
STANDARD
t
WC
t
AS
t
AH
t
DS
t
DH
t
GHWL
t
CS
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
t
VCS
Notes
:
1. This does not include the preprogramming time
URL:
www.hbe.co.kr
REV.02(August,2002)
DESCRIPTION
-75
-90
UNIT
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recover Time Before Write
/CE Setup Time
/CE Hold Time
Write Pulse Width
Write Pulse Width High
Byte Programming Operation
Sector Erase Operation (Note1)
Vcc set up time
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Min
70
0
40
40
0
0
0
0
40
20
7
1
50
90
0
45
45
0
0
0
0
45
20
7
1
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
Sec
µs
5
HANBit Electronics Co., Ltd.
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