Power Transistors
2SC5270, 2SC5270A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5±0.5
4.5
10.0
s
Features
q
q
q
φ3.2±0.1
5°
26.5±0.5
3.0±0.3
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
(T
C
=25˚C)
Ratings
1500
1600
1500
1600
600
5
20
12
8
120
3
150
–55 to +150
Unit
5°
23.4
22.0±0.5
2.0 1.2
5°
18.6±0.5
5°
5°
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
base voltage
2SC5270
2SC5270A
2SC5270
2SC5270A
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25°C
P
C
T
j
T
stg
4.0
2.0±0.2
1.1±0.1
2.0
0.7±0.1
5.45±0.3
3.3±0.3
0.7±0.1
5.45±0.3
5.5±0.3
V
5°
V
1
2
3
2.0
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Junction temperature
Storage temperature
V
V
A
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s
Electrical Characteristics
Parameter
2SC5270
Collector cutoff
current
2SC5270A
2SC5270
2SC5270A
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
(T
C
=25˚C)
Symbol
Conditions
V
CB
= 1000V, I
E
= 0
I
CBO
V
CB
= 1500V, I
E
= 0
V
CB
= 1600V, I
E
= 0
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 6A
I
C
= 6A, I
B
= 1.5A
I
C
= 6A, I
B
= 1.5A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 6A, I
B1
= 1.5A, I
B2
= –3A
3
1.5
0.12
2.5
0.2
5
min
typ
max
50
50
1
1
50
12
3
1.5
V
V
MHz
µs
µs
Unit
µA
mA
µA
1
Power Transistors
P
C
— Ta
140
10
2
2SC5270, 2SC5270A
h
FE
— I
C
V
CE
=5V
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
5000
I
C
/I
B
=4
Collector power dissipation P
C
(W)
120
Forward current transfer ratio h
FE
(1)
100
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink.
(3) Without heat sink
(P
C
=3.0W)
T
C
=100˚C
25˚C
4000
80
3000
–25˚C
10
60
2000
T
C
=100˚C
25˚C
–25˚C
40
1000
20
(2)
(3)
0
0
20
40
60
80 100 120 140 160
1
1
10
10
2
10
3
10
4
10
5
0
10
2
10
3
10
4
10
5
Ambient temperature Ta (˚C)
Collector current I
C
(mA)
Collector current I
C
(mA)
Area of safe operation (ASO)
100
I
CP
10
I
C
100ms 10ms
t=100µs
1ms
Area of safe operation, horizontal operation ASO
50
f=64kHz, T
C
<90˚C
Area of safe operation with
respect to the single pulse
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.
1.0
0.6
0.8
t
f
— I
B
T
C
=25˚C
I
C
=6A
fH=64kHz
Collector current I
C
(A)
Collector current I
C
(A)
40
Switching time t
f
(
µs
)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
DC
30
0.1
20
0.01
Non repetitive pulse
T
C
=25˚C
1
3
10
30
100
300
1000
10
<1mA
0
0
500
1000
0.001
1500
2SC5270
2SC5270A
2000
0
1
2
3
4
5
Collector to emitter voltage V
CE
(V)
Collector to emitter voltage V
CE
(V)
End-of-scan current I
B end
(A)
t
stg
— I
B
10
T
C
=25˚C
9 I
C
=6A
fH=64kHz
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
Switching time t
stg
(
µs
)
End-of-scan current I
B end
(A)
2
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