1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Inputs and Vcc terminals only.
3. Output and I/O terminals only.
CAPACITANCE
(T
A
= +25°C, F = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
6
8
Max.
10
12
Unit
pF
pF
NOTE:
1. This parameter is measured at characterization but not tested.
2
B
6
IDT54/74FCT646T/AT/CT
FAST CMOS OCTAL TRANSCEIVER/REGISTER (3-STATE)
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
FUNCTION TABLE
(1)
Inputs
G
H
H
L
L
L
L
DIR
X
X
L
L
H
H
CPAB
H or L
↑
X
X
X
H or L
CPBA
H or L
↑
X
H or L
X
X
SAB
X
X
X
X
L
H
SBA
X
X
L
H
X
X
Input
Output
Output
Input
A
1
- A
8
Input
Data I/O
(2)
B
1
- B
8
Input
Isolation
Store A and B Data
Real-Time B Data to A Bus
Stored B Data to A Bus
Real-Time A Data to B Bus
Stored A Data to B Bus
Operation or Function
NOTES:
1. H = HIGH
L = LOW
X = Don't Care
↑
= LOW-to-HIGH transition.
Select control = L: clocks can occur simultaneously.
Select control = H: clocks must be staggered in order to load both registers.
2. The data output functions may be enabled or disabled by various signals at the GAB or GBA inputs. Data input functions are always enabled, i.e. data at the bus pins will be
stored on every LOW-to-HIGH transition on the clock inputs.
3.
A
in B Register.
4.
B
in A Register.
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= –40°C to +85°C, V
CC
= 5.0V ±5%; Military: T
A
= –55°C to +125°C, V
CC
= 5.0V ±10%
Symbol
V
IH
V
IL
I
IH
I
IL
I
OZH
I
OZL
I
I
V
IK
V
H
I
CC
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current
(4)
Input LOW Current
(4)
High Impedance Output Current
(3-State output pins)
(4)
Input HIGH Current
(4)
Clamp Diode Voltage
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Max., V
I
= V
CC
(Max.)
V
CC
= Min, I
IN
= -18mA
—
V
CC
= Max., V
IN
= GND or V
CC
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
CC
= Max.
V
CC
= Max
V
I
= 2.7V
V
I
= 0.5V
V
O
= 2.7V
V
O
= 0.5V
Min.
2
—
—
—
—
—
—
—
—
—
Typ.
(2)
—
—
—
—
—
—
—
–0.7
200
0.01
Max.
—
0.8
±1
±1
±1
±1
±1
–1.2
—
1
µA
V
mV
µA
Unit
V
V
µA
µA
µA
OUTPUT DRIVE CHARACTERISTICS
Symbol
V
OH
Parameter
Output HIGH Voltage
V
CC
= Min
V
IN
= V
IH
or V
IL
Test Conditions
(1)
I
OH
= –6mA MIL
I
OH
= –8mA IND
I
OH
= –12mA MIL
I
OH
= –15mA IND
I
OL
= 48mA MIL
I
OL
= 64mA IND
Min.
2.4
2
—
–60
—
Typ.
(2)
3.3
3
0.3
–120
—
Max.
—
—
0.55
–225
±1
V
mA
µA
Unit
V
V
OL
I
OS
I
OFF
Output LOW Voltage
Short Circuit Current
Input/Output Power Off Leakage
(5)
V
CC
= Min
V
IN
= V
IH
or V
IL
V
CC
= Max., V
O
= GND
(3)
V
CC
= 0V, V
IN
or V
O
≤
4.5V
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. The test limit for this parameter is ±5µA at T
A
= –55°C.
5. This parameter is guaranteed but not tested.
3
IDT54/74FCT646T/AT/CT
FAST CMOS OCTAL TRANSCEIVER/REGISTER (3-STATE)
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
BUS
A
BUS
B
BUS
A
BUS
B
DIR
L
G
L
CPAB
X
CPBA
X
SAB
X
SBA
L
DIR
H
G
L
CPAB
X
CPBA
X
SAB
L
SBA
X
Real-Time Transfer
Bus B to A
Real-Time Transfer
Bus A to B
BUS
A
BUS
B
BUS
A
BUS
B
DIR
H
L
X
G
L
L
H
CPAB
↑
CPBA
X
↑
↑
SAB
X
X
X
SBA
X
X
X
X
↑
DIR
L
H
G
L
L
CPAB
X
H or L
CPBA
H or L
X
SAB
X
H
SBA
H
X
Storage From
A and/or B
Transfer Stores
(1)
Data to A and/or B
NOTE:
1. Cannot transfer data to A bus and B bus simultaneously.
4
IDT54/74FCT646T/AT/CT
FAST CMOS OCTAL TRANSCEIVER/REGISTER (3-STATE)
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
∆I
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply
Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
G
= DIR = GND
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
f
CP
= 10MHz
50% Duty Cycle
G
= DIR = GND
One Bit Toggling
at fi = 5MHz
V
CC
= Max.
Outputs Open
f
CP
= 10MHz
50% Duty Cycle
G
= DIR = GND
Eight Bits Toggling
at fi = 2.5MHz
V
IN
= 3.4V
V
IN
= GND
—
6
16.3
(5)
V
IN
= V
CC
V
IN
= GND
Test Conditions
(1)
Min.
—
—
Typ.
(2)
0.5
0.15
Max.
2
0.25
Unit
mA
mA/
MHz
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
—
1.5
3.5
mA
V
IN
= 3.4V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
—
2
5.5
—
3.8
7.3
(5)
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input; (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of
∆I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
∆I
CC
D
H
N
T
+ I
CCD
(f
CP
/2+ f
i
N
i
)
I
CC
= Quiescent Current
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i
= Output Frequency
N
i
= Number of Outputs at f
i
All currents are in milliamps and all frequencies are in megahertz.
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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