TENTATIVE
This is not a final specification.
Some parameters are subject to change.
〈SMALL-SIGNAL TRANSISTOR〉
INA5001AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
OUTLINE DRAWING
2.5
0.5
1.5
0.5
DESCRIPTION
INA5001AC1 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for relay draive or Power supply application.
.
Unit:½½
0.95
2.9
1.90
FEATURE
●Super mini package for easy mounting
● Low VCE(sat) V
CE(sat)
=-0.5 V max(@I
C
=-500mA/I
B
=-50mA)
● High collector current
● High voltage
I
C
=-1A
①
②
③
V
CEO
=-50V
1.1
0.16
APPLICATION
Relay drive, Power supply for audio equipment, VTR , etc
0.8
0.95
MAXIMUM RATINGS
(Ta=25℃)
Symbol
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
-50
-5
-50
-1
-2
200
+150
-55½+150
Unit
V
V
V
A
A
mW
℃
℃
JEITA:SC-59
TERMINAL CONNECTER
①:BASE
②:EMITTER
③:COLLECTOR
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain bandwidth product
Collector output capacitance
Symbol
V(BR)
CBO
V(BR)
EBO
V(BR)
CEO
I
CBO
I
EBO
hFE
V
CE(sat)
fT
Cob
Test conditions
I
C
=-10μA , I
E
=0
I
E
=-10μA , I
C
=0
I
C
=-1mA ,R
V
V
V
CB
EB
BE
0½0.1
0.4
Limits
Min
-50
-5
-50
-
-
160
-
-
-
Typ
-
-
-
-
-
-
-
120
12
Max
-
-
-
-0.1
-0.1
380
-0.5
-
-
V
MHz
pF
Unit
V
V
V
uA
uA
=∞
=-50V, I
E
=0mA
=-5V, I
C
=0mA
=-4V, I
C
=-0.1A
=-2V, I
E
=500mA
=-10V, I
E
=0mA,f=1MHz
CE
I
C
=-500mA ,I
B
=-50mA
V
V
CE
CB
ISAHAYA ELECTRONICS CORPORATION
TENTATIVE
This is not a final specification.
Some parameters are subject to change.
〈SMALL-SIGNAL TRANSISTOR〉
INA5001AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
Collector dissipation-AMBIENT TEMPERATURE
500
Collector dissipation Pc (mW)
400
300
200
100
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta (℃)
-0.6
PcMAX=0.2W
COMMON EMITTER OUTPUT
-5.0mA
-4.5mA
-4.0mA
-3.5mA
-3.0mA
-2.5mA
Ta=25℃
Collector current IC (A)
-0.4
-2.0mA
-1.5mA
-1mA
-0.2
IB=-0.5mA
-0
-0
-1
-2
-3
COLLECTOR TO EMITTER VOLTAGE VCE (V)
DC forward current gain VS. Collector current
1000
VCE=-4V
VCE=-4V
DC forward current gain hFE
Ta=85℃
25℃
100
-40℃
COMMON EMITTER TRANSFER
-100
Collector current IC(mA)
-10
Ta=85℃
25℃
-40℃
-1
-0.1
-0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
BASE TO EMITTER VOLTAGE VBE (V)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. BASE CURRENT
-1.6
COLLECTOR TO EMITTER SATURATION
VOLTAGE VCE (V)
Ta=25℃
-1.4
-1.2
IC=-0.1A
-0.3A
-0.4A
-0.5A
-0.6A
-0.2A
10
-0.1
-1
-10
-100
-1000
Collector current IC(mA)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
-1000
COLLECTOR TO EMITTER SATURATION
VOLTAGE VCE(sat) (½V)
IC/IB=10
-1
-0.8
-0.6
-0.4
-0.2
-0
-0.1
-100
Ta=85℃
25℃
-1
-10
-100
-10
-0.1
-40℃
-1
-10
-100
-1000
BASE CURRENT IB (mA)
COLLECTOR CURRENT IC(mA)
ISAHAYA ELECTRONICS CORPORATION
TENTATIVE
This is not a final specification.
Some parameters are subject to change.
〈SMALL-SIGNAL TRANSISTOR〉
INA5001AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
1000
GAIN BAND WIDTH PRODUCT ½T (MH½)
Ta=25℃
VCE=-2V
100
COLLECTOR OUTPUT CAPACITANCE
Cob (pF)
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
Ta=25℃
IE=0
½=1MHz
100
10
10
1
0.1
1
10
100
1000
EMITTER CURRENT IE (½A)
1
-0.1
-1
-10
-100
COLLECTOR TO BASE VOLTAGE VCB (V)
Ta=25℃
single pulse
-10
ASO
ICMmax=-2A(less than 100msec)
ICmax=-1A
PW=1msec
Collector current IC (A)
-1
10msec
-0.1
DC (200mW)
100msec
1sec
VCEmax=-50V
-0.01
-0.001
-0.01
-0.1
-1
-10
-100
COLLECTOR TO EMITTER VOLTAGE VCE (V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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·
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
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herein.
·
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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h
prohibited.
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Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
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Feb.2009