PD - 95579
AUTOMOTIVE MOSFET
Features
l
l
l
l
l
l
l
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
IRL3705ZPbF
IRL3705ZSPbF
IRL3705ZLPbF
HEXFET
®
Power MOSFET
D
V
DSS
= 55V
G
S
R
DS(on)
= 8.0mΩ
I
D
= 75A
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
IRL3705Z
D
2
Pak
IRL3705ZS
TO-262
IRL3705ZL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
86
61
75
340
130
0.88
± 16
120
180
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
d
Ã
h
W
W/°C
V
mJ
A
mJ
°C
g
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
i
300 (1.6mm from case )
10 lbf in (1.1N m)
y
y
Typ.
Max.
1.14
–––
62
40
Units
°C/W
i
i
–––
0.50
–––
–––
Junction-to-Ambient (PCB Mount)
j
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1
07/20/04
IRL3705Z/S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
–––
–––
1.0
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.055
6.5
–––
–––
–––
–––
–––
–––
–––
–––
40
12
21
17
240
26
83
4.5
7.5
2880
420
220
1500
330
510
–––
–––
8.0
11
12
3.0
–––
20
250
200
-200
60
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 52A
mΩ V
GS
= 5.0V, I
D
= 43A
V
GS
= 4.5V, I
D
= 30A
V V
DS
= V
GS
, I
D
= 250µA
V V
DS
= 25V, I
D
= 52A
µA V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 16V
V
GS
= -16V
I
D
= 43A
nC V
DS
= 44V
V
GS
= 5.0V
V
DD
= 28V
ns I
D
= 43A
R
G
= 4.3
Ω
V
GS
= 5.0V
e
e
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
D
G
S
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
16
7.4
75
A
340
1.3
24
11
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 52A, V
GS
= 0V
T
J
= 25°C, I
F
= 43A, V
DD
= 28V
di/dt = 100A/µs
e
S
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRL3705Z/S/LPbF
1000
TOP
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
1000
TOP
VGS
12V
10V
8.0V
5.0V
4.5V
3.5V
3.0V
2.8V
ID, Drain-to-Source Current (A)
100
10
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
1
2.8V
0.1
10
2.8V
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
120
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
T J = 175°C
100
100
T J = 25°C
80
10
60
T J = 175°C
40
1
TJ = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
20
V DS = 8.0V
0
0
20
40
60
80
100
120
0.1
0
2
4
6
8
10
12
14
16
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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IRL3705Z/S/LPbF
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = Cds + C gd
6.0
ID= 52A
VGS, Gate-to-Source Voltage (V)
5.0
VDS= 44V
VDS= 28V
VDS= 11V
C, Capacitance(pF)
10000
4.0
Ciss
3.0
1000
Coss
Crss
2.0
1.0
100
1
10
100
0.0
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TJ = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.00
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
1msec
10msec
100
1000
10.00
T J = 25°C
VGS = 0V
1.00
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRL3705Z/S/LPbF
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
90
80
ID, Drain Current (A)
Limited By Package
ID = 43A
VGS = 5.0V
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
τ
C
τ
Ri (°C/W)
0.5413
0.5985
τi
(sec)
0.000384
0.002778
τ
1
τ
2
0.01
Ci=
τi/Ri
Ci= i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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