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1N5817-E

产品描述Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM),
产品类别分立半导体    二极管   
文件大小177KB,共7页
制造商LRC
官网地址http://www.lrc.cn
标准
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1N5817-E概述

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM),

1N5817-E规格参数

参数名称属性值
是否Rohs认证符合
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.45 V
最大非重复峰值正向电流25 A
元件数量1
最高工作温度150 °C
最大输出电流1 A
最大重复峰值反向电压20 V
表面贴装NO
技术SCHOTTKY
Base Number Matches1

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1N5817-E thru 1N5819-E
Schottky Barrier Rectifiers
Reverse Voltage 20 to 40V Forward Current 1.0A
Feature & Dimensions
* Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* Low power loss,high efficiency
* For use in low voltage high frequency inverters,
free wheeling,and polarity protection applications
* Guarding for over voltage protection
* High temperature soldering guaranteed:
260°C/10 seconds at terminals
* IEC61000-4-2 ESD Air Contact≥±15KV
Mechanical Data
Case:
JEDEC DO-41, molded plastic over glass body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
We declare that the material of product compliance
Weight:
0.011 oz., 0.284 g
with ROHS requirements
Handling precautin:None
1.Maximum & Thermal Characteristics Ratings
at 25°C ambient temperature unless otherwise specified.
Parameter Symbol
device marking code
Maximum repetitive peak reverse voltage
Maximum RSM voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length (See fig. 1)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Typical thermal resistance (Note 1)
Operating temperature range
storage temperature range
Parameter Symbol
V
RRM
V
RSM
V
DC
IF(AV)
I
FSM
RθJA
TJ
TSTG
symbol
1N5817-E
symbol
1N5817-E
1N5817
ESD
20
14
20
1N5818-E
1N5818
ESD
30
21
30
1.0
25
50
–40
to +150
–40
to +175
1N5819-E
1N5819
ESD
40
28
40
V
V
V
A
A
°C/W
°C
°C
1N5819-E
0.55
Unit
V
mA
PF
Unit
Electrical Characteristics Ratings
at 25°C ambient temperature unless otherwise specified.
1N5818-E
0.45
V
F
Maximum instantaneous forward voltage at 1.0A
1.0
Maximum DC reverse current TA = 25°C
IR
10
at rated DC blocking voltage TA = 100°C
110
Typical junction capacitance at 4.0V, 1MHz
CJ
NOTES:
1. Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted

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