DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
1N5059 to 1N5062
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
1996 Jun 19
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
1N5059 to 1N5062
Rugged glass package, using a high
temperature alloyed construction.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
1N5059
1N5060
1N5061
1N5062
V
RWM
crest working reverse voltage
1N5059
1N5060
1N5061
1N5062
V
R
continuous reverse voltage
1N5059
1N5060
1N5061
1N5062
I
F(AV)
average forward current
PARAMETER
repetitive peak reverse voltage
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
200
400
600
800
200
400
600
800
200
400
600
800
2.0
V
V
V
V
V
V
V
V
V
V
V
V
A
UNIT
T
tp
= 45
°C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
T
amb
= 80
°C;
PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
−
−
0.8
A
I
FSM
E
RSM
T
stg
T
j
non-repetitive peak forward current
non-repetitive peak reverse avalanche
energy
storage temperature
junction temperature
t = 10 ms half sinewave
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
see Fig.5
−
−
−65
−65
50
20
+175
+175
A
mJ
°C
°C
1996 Jun 19
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
1N5059
1N5060
1N5061
1N5062
I
R
t
rr
C
d
reverse current
V
R
= V
RRMmax
; see Fig.7
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.7
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
CONDITIONS
I
F
= 1 A; T
j
= T
j max
; see Fig.6
I
F
= 1 A; see Fig.6
I
R
= 0.1 mA
225
450
650
900
−
−
−
−
MIN.
−
−
1N5059 to 1N5062
TYP.
−
−
MAX.
0.8
1.0
UNIT
V
V
−
−
−
−
−
−
3
50
−
−
−
−
1
150
−
−
V
V
V
V
µA
µA
µs
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
46
100
UNIT
K/W
K/W
1996 Jun 19
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
GRAPHICAL DATA
MBG044
1N5059 to 1N5062
handbook, halfpage
3
handbook, halfpage
1.6
MBG054
IF(AV)
(A)
2
IF(AV)
(A)
1.2
0.8
1
0.4
0
0
40
80
120
160
200
Ttp (°C)
0
0
40
80
120
200
160
Tamb (°C)
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Lead length 10 mm.
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.9.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC745
handbook, halfpage
4
handbook, halfpage
200
MBH388
P
(W)
3
2.5
Tj
2 1.57 1.42
(°C)
2
a=3
100
59
60
61
62
1
0
0
1
2
I
F(AV)
(A)
3
0
0
400
800
VR (V)
1200
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
1996 Jun 19
4
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
MGC735
MGC734
handbook, halfpage
15
10
3
handbook, halfpage
IR
(µA)
10
2
IF
(A)
10
max
10
5
1
0
0
1
V (V)
F
2
10
−1
0
40
80
120
160
Tj ( C)
o
200
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 175
°C.
V
R
= V
RRMmax
.
Fig.6
Forward current as a function of forward
voltage; maximum values.
Fig.7
Reverse current as a function of junction
temperature; maximum values.
10
2
handbook, halfpage
MBG031
handbook, halfpage
50
25
Cd
(pF)
7
10
50
2
3
1
10
VR (V)
10
2
MGA200
1
f = 1 MHz; T
j
= 25
°C.
Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 Jun 19
5
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
