MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
500 mW DO-35 Glass
Zener Voltage Regulator Diodes
GENERAL DATA APPLICABLE TO ALL SERIES IN
THIS GROUP
1N5221B
SERIES
500 mW
DO-35 GLASS
GLASS ZENER DIODES
500 MILLIWATTS
1.8–200 VOLTS
500 Milliwatt
Hermetically Sealed
Glass Silicon Zener Diodes
Specification Features:
•
Complete Voltage Range — 1.8 to 200 Volts
•
DO-204AH Package — Smaller than Conventional DO-204AA Package
•
Double Slug Type Construction
•
Metallurgically Bonded Construction
Mechanical Characteristics:
CASE:
Double slug type, hermetically sealed glass
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from
case for 10 seconds
FINISH:
All external surfaces are corrosion resistant with readily solderable leads
POLARITY:
Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION:
Any
WAFER FAB LOCATION:
Phoenix, Arizona
ASSEMBLY/TEST LOCATION:
Seoul, Korea
MAXIMUM RATINGS
(Motorola Devices)*
Rating
DC Power Dissipation and TL
≤
75°C
Lead Length = 3/8″
Derate above TL = 75°C
Operating and Storage Temperature Range
* Some part number series have lower JEDEC registered ratings.
CASE 299
DO-204AH
GLASS
Symbol
PD
Value
500
4
Unit
mW
mW/°C
°C
TJ, Tstg
– 65 to +200
PD , MAXIMUM POWER DISSIPATION (WATTS)
0.7
0.6
0.5
0.4
3/8”
3/8”
HEAT
SINKS
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
180 200
TL, LEAD TEMPERATURE (°C)
Figure 1. Steady State Power Derating
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-1
GENERAL DATA — 500 mW DO-35 GLASS
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted. Based on dc measurements at thermal equilibrium; lead length
= 3/8″; thermal resistance of heat sink = 30°C/W) VF = 1.1 Max @ IF = 200 mA for all types.
Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 3)
2.4
2.5
2.7
2.8
3
Max Zener Impedance
(Note 4)
ZZT @ IZT
Ohms
30
30
30
30
29
ZZK @ IZK = 0.25 mA
Ohms
1200
1250
1300
1400
1600
Max Reverse
Leakage Current
IR
µA
100
100
75
75
50
VR
Volts
1
1
1
1
1
JEDEC
Type No.
(Note 1)
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
Test
Current
IZT
mA
20
20
20
20
20
Max Zener Voltage
Temperature Coeff.
Coeff
θ
VZ (%/°C)
(Note 2)
–0.085
–0.085
–0.08
–0.08
–0.075
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
8.5
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
0.1
1
1
1
1
2
2
3
3.5
4
5
6
6.5
6.5
7
8
8.4
9.1
9.9
10
11
–0.07
–0.065
–0.06
±
0.055
±
0.03
±
0.03
+0.038
+0.038
+0.045
+0.05
+0.058
+0.062
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
7.8
7.4
7
6.6
6.2
5.6
5.2
5
4.6
4.5
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2.1
2
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
+0.083
+0.084
+0.085
+0.086
+0.086
+0.087
+0.088
+0.089
+0.09
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
+0.096
+0.096
+0.097
+0.097
(continued)
500 mW DO-35 Glass Data Sheet
6-2
Motorola TVS/Zener Device Data
GENERAL DATA — 500 mW DO-35 GLASS
ELECTRICAL CHARACTERISTICS — continued
(TA = 25°C unless otherwise noted. Based on dc measurements at thermal equi-
librium; lead length = 3/8″; thermal resistance of heat sink = 30°C/W) VF = 1.1 Max @ IF = 200 mA for all types.
Nominal
Zener Voltage
VZ @ IZT
Volts
(Note 3)
68
75
82
91
100
110
120
130
140
150
170
180
190
200
Max Zener Impedance
(Note 4)
ZZT @ IZT
Ohms
230
270
330
400
500
750
900
1100
1300
1500
1900
2200
2400
2500
ZZK @ IZK = 0.25 mA
Ohms
1600
1700
2000
2300
2600
3000
4000
4500
4500
5000
5500
6000
6500
7000
Max Reverse
Leakage Current
IR
µA
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
VR
Volts
52
56
62
69
76
84
91
99
106
114
129
137
144
152
JEDEC
Type No.
(Note 1)
1N5266B
1N5267B
1N5268B
1N5270B
1N5271B
1N5272B
1N5273B
1N5274B
1N5275B
1N5276B
1N5278B
1N5279B
1N5280B
1N5281B
NOTE 1. TOLERANCE
Test
Current
IZT
mA
1.8
1.7
1.5
1.4
1.3
1.1
1
0.95
0.9
0.85
0.74
0.68
0.66
0.65
Max Zener Voltage
Temperature Coeff.
Coeff
θ
VZ (%/°C)
(Note 2)
+0.097
+0.098
+0.098
+0.099
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
The JEDEC type numbers shown indicate a tolerance of
±5%.
For tighter tolerance devices
use suffixes “C” for
±2%
and “D” for
±1%.
NOTE 2. TEMPERATURE COEFFICIENT (θVZ)
Test conditions for temperature coefficient are as follows:
a. IZT = 7.5 mA, T1 = 25°C,
a.
T2 = 125°C (1N5221B through 1N5242B).
b. IZT = Rated IZT, T1 = 25°C,
a.
T2 = 125°C (1N5243B through 1N5281B).
Device to be temperature stabilized with current applied prior to reading breakdown voltage
at the specified ambient temperature.
NOTE 3. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in thermal equilibrium at the lead
temperature of 30°C
±1°C
and 3/8″ lead length.
NOTE 4. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current
applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.
For more information on special selections contact your nearest Motorola representa-
tive.
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-3
GENERAL DATA — 500 mW DO-35 GLASS
APPLICATION NOTE — ZENER VOLTAGE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom-
mended:
Lead Temperature, TL, should be determined from:
TL =
θ
LAPD + TA.
θ
LA is the lead-to-ambient thermal resistance (°C/W) and PD is
the power dissipation. The value for
θ
LA will vary and depends
on the device mounting method.
θ
LA is generally 30 to 40°C/W
for the various clips and tie points in common use and for
printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the mea-
sured value of TL, the junction temperature may be deter-
mined by:
TJ = TL +
∆T
JL.
∆T
JL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
∆T
JL =
θ
JLPD.
For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ(∆TJ) may be estimated. Changes in
voltage, VZ, can then be found from:
∆V
=
θ
VZTJ.
θ
VZ, the zener voltage temperature coefficient, is found from
Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Surge limitations are given in Figure 7. They are lower than
would be expected by considering only junction temperature,
as current crowding effects cause temperatures to be ex-
tremely high in small spots, resulting in device degradation
should the limits of Figure 7 be exceeded.
θ
JL , JUNCTION-TO-LEAD THERMAL RESISTANCE (
°
C/W)
500
400
L
L
300
2.4–60 V
200
100
0
62–200 V
0
0.2
0.4
0.6
0.8
1
L, LEAD LENGTH TO HEAT SINK (INCH)
Figure 2. Typical Thermal Resistance
1000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
3
4
5
6
7
8
9
10
11
12
13
14
15
+25°C
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
I R , LEAKAGE CURRENT (
µ
A)
+125°C
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current
500 mW DO-35 Glass Data Sheet
6-4
Motorola TVS/Zener Device Data
GENERAL DATA — 500 mW DO-35 GLASS
TEMPERATURE COEFFICIENTS
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
θV
Z , TEMPERATURE COEFFICIENT (mV/
°C)
+12
+10
+8
+6
+4
+2
RANGE
0
–2
–4
2
3
4
5
6
7
8
9
VZ, ZENER VOLTAGE (VOLTS)
10
11
12
VZ @ IZT
(NOTE 2)
θV
Z , TEMPERATURE COEFFICIENT (mV/
°C)
100
70
50
30
20
10
7
5
3
2
1
10
RANGE
VZ @ IZ (NOTE 2)
20
30
50
VZ, ZENER VOLTAGE (VOLTS)
70
100
Figure 4a. Range for Units to 12 Volts
Figure 4b. Range for Units 12 to 100 Volts
θV
Z , TEMPERATURE COEFFICIENT (mV/
°C)
θV
Z , TEMPERATURE COEFFICIENT (mV/
°C)
200
180
160
+6
+4
+2
20 mA
0
0.01 mA
–2
–4
3
4
1 mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE:
CHANGES IN ZENER CURRENT DO NOT
NOTE:
AFFECT TEMPERATURE COEFFICIENTS
5
6
7
8
VZ @ IZ
TA = 25°C
140
VZ @ IZT
(NOTE 2)
120
100
120
130
140
150
160
170
180
190
200
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
Figure 4c. Range for Units 120 to 200 Volts
Figure 5. Effect of Zener Current
1000
500
0 V BIAS
200
C, CAPACITANCE (pF)
100
50
20
10
5
2
1
1
2
5
10
20
50% OF
VZ BIAS
TA = 25°C
100
70
50
C, CAPACITANCE (pF)
30
20
TA = 25°C
0 BIAS
1 V BIAS
1 VOLT BIAS
10
7
5
3
2
1
50% OF VZ BIAS
50
100
120
140
160
180
190
200
220
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
Figure 6a. Typical Capacitance 2.4–100 Volts
Figure 6b. Typical Capacitance 120–200 Volts
Motorola TVS/Zener Device Data
500 mW DO-35 Glass Data Sheet
6-5
MEMS传感器
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