BLL6H0514L-130;
BLL6H0514LS-130
LDMOS driver transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz
range.
Table 1.
Application information
Typical RF performance at T
case
= 25
C; I
Dq
= 50 mA; in a class-AB application circuit.
Mode of operation
pulsed RF
f
(MHz)
960 to 1215
1200 to 1400
t
p
(s)
128
300
(%)
10
10
V
DS
(V)
50
50
P
L
(W)
130
130
G
p
(dB)
19
17
RL
in
(dB)
10
10
D
(%)
54
50
P
droop(pulse)
(dB)
0
0
t
r
(ns)
15
15
t
f
(ns)
8
8
1.2 Features and benefits
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (0.5 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
BLL6H0514L(S)-130
LDMOS driver transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLL6H0514L-130 (SOT1135A)
1
2
3
2
3
sym112
1
BLL6H0514LS-130 (SOT1135B)
1
2
3
drain
gate
source
[1]
1
2
1
3
sym112
3
2
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLL6H0514L-130
BLL6H0514LS-130
-
-
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT1135A
SOT1135B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
100
+13
18
+150
200
Unit
V
V
A
C
C
BLL6H0514L-130_0514LS-130#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 13
BLL6H0514L(S)-130
LDMOS driver transistor
5. Thermal characteristics
Table 5.
Symbol
Z
th(j-c)
Thermal characteristics
Parameter
transient thermal impedance from
junction to case
Conditions
T
case
= 85
C;
P
L
= 130 W
t
p
= 100
s;
= 10 %
t
p
= 200
s;
= 10 %
t
p
= 300
s;
= 10 %
t
p
= 100
s;
= 20 %
t
p
= 1 ms;
= 10 %
0.17
0.22
0.25
0.23
0.36
K/W
K/W
K/W
K/W
K/W
Typ
Unit
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 630 mA
V
DS
= 10 V; I
D
= 135 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 135 mA
V
GS
= V
GS(th)
+ 6.25 V;
I
D
= 135 mA
Min
100
1.3
-
Typ Max
-
1.8
-
-
2.25
1.4
-
140
Unit
V
V
A
A
nA
m
15.8 18
-
806
-
-
-
1578 mS
200 275
Table 7.
RF characteristics
Mode of operation: pulsed RF; t
p
= 300
s;
= 10 %; RF performance at V
DS
= 50 V; I
Dq
= 50 mA;
f = 1.2 GHz to 1.4 GHz; T
case
= 25
C; unless otherwise specified, in a class-AB production
test circuit.
Symbol
P
L
V
DS
G
p
RL
in
D
P
droop(pulse)
t
r
t
f
Parameter
output power
drain-source voltage
power gain
input return loss
drain efficiency
pulse droop power
rise time
fall time
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
P
L
= 130 W
Conditions
Min Typ Max Unit
130
-
15
7
45
-
-
-
-
-
17
10
50
0
20
6
-
50
-
-
-
0.3
50
50
W
V
dB
dB
%
dB
ns
ns
BLL6H0514L-130_0514LS-130#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 13
BLL6H0514L(S)-130
LDMOS driver transistor
6.1 Ruggedness in class-AB operation
The BLL6H0514L-130 and BLL6H0514LS-130 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: V
DS
= 50 V; I
Dq
= 50 mA; P
L
= 130 W; f = 1.2 GHz to 1.4 GHz; t
p
= 300
s;
= 10 %.
7. Application information
7.1 Impedance information
Table 8.
f
MHz
1200
1300
1400
Typical impedance
Z
S
1.21
j3.44
1.56
j4.49
2.21
j4.86
Z
L
2.40
j0.63
2.30
j0.87
2.00
j1.71
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLL6H0514L-130_0514LS-130#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 13
BLL6H0514L(S)-130
LDMOS driver transistor
7.2 Performance curves
20
G
p
(dB)
16
G
p
η
D
001aam262
60
η
D
(%)
50
20
RL
in
(dB)
16
001aam263
12
40
12
8
30
8
4
20
4
0
1.15
1.25
1.35
f (GHz)
10
1.45
0
1.15
1.25
1.35
f (GHz)
1.45
V
DS
= 50 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %.
V
DS
= 50 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %.
Fig 2.
Power gain and drain efficiency as function of
frequency; typical values
Fig 3.
Input return loss as a function of frequency;
typical values
20
G
p
(dB)
16
(1)
(2)
(3)
001aam264
60
η
D
(%)
50
001aam265
12
40
8
30
(1)
(2)
(3)
4
20
0
0
40
80
120
P
L
(W)
160
10
0
40
80
120
P
L
(W)
160
V
DS
= 50 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %.
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
V
DS
= 50 V; I
Dq
= 50 mA; t
p
= 300
s;
= 10 %.
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
Fig 4.
Power gain as a function of load power; typical
values
Fig 5.
Drain efficiency as function of load power;
typical values
BLL6H0514L-130_0514LS-130#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 13
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