SML100L16: 产品描述Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA,; 产品类别分立半导体晶体管; 文件大小19KB，共2页; 制造商TT Electronics plc; 官网地址http://www.ttelectronics.com/

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SML100L16概述

Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA,

SML100L16规格参数

参数名称	属性值
是否Rohs认证	不符合
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
雪崩能效等级（Eas）	2500 mJ
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	1000 V
最大漏极电流 (ID)	21 A
最大漏源导通电阻	0.5 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-264AA
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	84 A
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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SML100L16

TO–264AA Package Outline.

Dimensions in mm (inches)

1.80 (0.071)

2.01 (0.079)

4.60 (0.181)

5.21 (0.205)

19.51 (0.768)

26.49 (0.807)

3.10 (0.122)

3.48 (0.137)

5.79 (0.228)

6.20 (0.244)

25.48 (1.003)

26.49 (1.043)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

2.29 (0.090)

2.69 (0.106)

2.79 (0.110)

3.18 (0.125)

DSS

1000V

21A

D(cont)

Ω

DS(on)

0.500Ω

•

Faster Switching

Lower Leakage

100% Avalanche Tested

Popular TO–264 Package

0.48 (0.019)

0.84 (0.033)

2.59 (0.102)

3.00 (0.118)

19.81 (0.780)

21.39 (0.842)

Pin 1 – Gate

Pin 2 – Drain

2.29 (0.090)

2.69 (0.106)

0.76 (0.030)

1.30 (0.051)

5.45 (0.215) BSC

2 plcs.

Pin 3 – Source

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSS

GSM

, T

STG

Drain – Source Voltage

Continuous Drain Current

Pulsed Drain Current

Gate – Source Voltage

Gate – Source Voltage Transient

Total Power Dissipation @ T

case

= 25°C

Derate Linearly

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

Avalanche Current

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1000

±30

±40

520

4.16

–55 to 150

300

2500

W/°C

°C

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Starting T

= 25°C, L = 11.34mH, R

= 25Ω, Peak I

= 21A

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

6/99

SML100L16相似产品对比

	SML100L16	SML100L16R3
描述	Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA,	Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA,
是否Rohs认证	不符合	符合
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	compliant
雪崩能效等级（Eas）	2500 mJ	2500 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	1000 V	1000 V
最大漏极电流 (ID)	21 A	21 A
最大漏源导通电阻	0.5 Ω	0.5 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-264AA	TO-264AA
JESD-30 代码	R-PSFM-T3	R-PSFM-T3
元件数量	1	1
端子数量	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	84 A	84 A
认证状态	Not Qualified	Not Qualified
表面贴装	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON
Base Number Matches	1	1

SML100L16

SML100L16概述

SML100L16规格参数

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