Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYV118, BYV118B series
SYMBOL
QUICK REFERENCE DATA
V
R
= 35 V/ 40 V/ 45 V
a1
1
k 2
a2
3
I
O(AV)
= 10 A
V
F
≤
0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV118 series is supplied in the SOT78 conventional leaded package.
The BYV118B series is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
1
anode 2 (a)
cathode (k)
SOT78 (TO220AB)
tab
SOT404
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
BYV118-
BYV118B-
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current (both diodes
conducting)
Repetitive peak forward
current (per diode)
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
-
T
mb
≤
108 ˚C
square wave;
δ
= 0.5;
T
mb
≤
127 ˚C
square wave;
δ
= 0.5;
T
mb
≤
127 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
35
35
35
35
35
MAX.
40
40
40
40
40
10
10
100
110
1
150
175
45
45
45
45
45
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
1.
It is not possible to make connection to pin 2 of the SOT404 pckage.
May 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
BYV118, BYV118B series
MIN.
-
-
-
-
TYP. MAX. UNIT
-
-
60
50
4.5
3
-
-
K/W
K/W
K/W
K/W
per diode
both diodes
SOT78 package in free air
SOT404 package, pcb mounted, minimum
footprint, FR4 board
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
C
d
Forward voltage per diode
Reverse current per diode
Junction capacitance per
diode
CONDITIONS
I
F
= 5 A; T
j
= 125˚C
I
F
= 10 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
MIN.
-
-
-
-
-
TYP. MAX. UNIT
0.52
0.72
0.06
6
155
0.6
0.87
0.5
15
-
V
V
mA
mA
pF
May 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
BYV118, BYV118B series
5
4
3
2
Forward dissipation, PF (W) PBYR1045CTD
Vo = 0.43 V
Rs = 0.034 Ohms
0.5
0.2
0.1
Tmb(max) / C
137.5
D = 1.0
132
146.5
100
Reverse current, IR (mA)
PBYR645CT
10
125 C
100 C
1
I
t
p
D=
t
p
T
t
75 C
50 C
Tj = 25 C
141
155.5
1
T
0.1
0
0
1
2
3
4
5
6
Average forward current, IF(AV) (A)
7
150
8
0.01
0
25
Reverse voltage, VR (V)
50
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Forward dissipation, PF (W) PBYR1045CTD Tmb(max) / C
137.5
Vo = 0.43 V
Rs = 0.034 Ohms
a = 1.57
4
132
1.9
2.2
2.8
3
146.5
4
5
2
1
0
141
155.5
150
5
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Cd / pF
1000
PBYR645CT
100
10
0
1
2
3
4
Average forward current, IF(AV) (A)
1
10
VR / V
100
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
BYV118
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25˚C to 125 ˚C.
20
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
10
Transient thermal impedance, Zth j-mb (K/W)
15
1
typ
10
max
5
0.1
P
D
t
p
D=
t
p
T
t
T
0
0.01
0
0.2
0.4
0.6
0.8
1
Forward voltage, VF (V)
1.2
1.4
1us
10us
100us
1ms
10ms 100ms
1s
pulse width, tp (s)
BYV118
10s
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
May 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYV118, BYV118B series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.7. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
May 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
10.3 max
BYV118, BYV118B series
4.5 max
1.4 max
11 max
15.4
2.5
0.85 max
(x2)
2.54 (x2)
0.5
Fig.8. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.9. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
May 1998
5
Rev 1.300
嵌入式系统
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