PSD705 thru PSD706
SURFACE MOUNT SCHOTTKY BARRIER DIODES
SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS
SOT-23
.014(0.35)
.020(0.51)
TOP VIEW
.033(0.85)
.041(1.05)
.018(0.46)
.039(1.00)
0.0004(0.01)
.005(0.13)
1.06(2.70)
1.22(3.10)
.047(1.19) 083(2.10)
.055(1.4) 1.18(3.0)
.067(1.70)
.083(2.10)
.035(0.89)
.043(1.10)
.0118(0.30)
.024(0.61)
.003(0.076)
.0098(0.25)
FEATURES
Extremely Fast Switching Speed
Low Forward Voltage
Very Small Conduction Losses
Schottky Barrier Diodes Encapsulated
in a SOT-23 Package
DESCRIPTION
These schottky barrier diodes are designed for high
speed Switching applications circuit protection, and
voltage clamping, Extremely low forward voltage
reduces conduction loss, Miniature surface mount
package is excellent for hand held and Portable
applications where space is limited
MAXIMUM RATING
(T
J
=25 C unless otherwise noted)
o
CHARACTERISTICS
Reverse Voltage
Average Rectified Forward Current
Peak Rectified Forward Current Rated V
R
, Square Wave,
20KHz
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
V
R
I
F(AV)
I
FSM
T
J
T
stg
PSD705 / PSD706
40
30
200
UNITS
Volts
mA
mA
0
-55 to +125
-55 to +150
C
C
0
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
o
CHARACTERISTICS
Reverse Breakdown Voltage (I
R
= 100 A)
Forward Voltage
I
F
= 1.0mA
Total Capacitance
(V
R
= 1.0V, f = 1.0MHz)
Reverse Leakage
V
R
= 10V
SYMBOL
V
(BR)R
V
F
Min
40
Typ
Max
UNITS
Volts
0.37
Volts
C
T
2.0
pF
I
R
1.0
Adc
Device Marking
Item
PSD705
Eqivalent Circuit diagram
1
3
2
1
3
2
PSD706
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PSD705 thru PSD706
SURFACE MOUNT SCHOTTKY BARRIER DIODES
Electrical characteristic curves
(Ta = 25 C)
1000m
Typ.
pulse m easurem ent
100
m
Ta
=
125 C
FORWARD CURRENT : I
F
(A)
REVERSE CURRENT : I
R
(A)
100m
10m
C
12
5
10
Ta
=
75 C
1
m
Ta
=
25 C
1m
100
10
1
Ta
=
Ta= 75 C
100n
Ta= 25 C
Ta= - 25 C
10n
Ta= - 25 C
1n
Typ.
pulse m easurem ent
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
25
30
35
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V
R
(
V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
CAPACITANCE BETWEEN TERMINALS : C
T
(
p
F )
100
50
f
=
1MHz
Ta= 25
C
20
10
5
2
1
0
2
4
6
8
10
12
14
REVERSE VOLTAGE : V
R
(
V)
Fig. 3 Capacitance between
terminals characteristics
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