Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS
(Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
Available in surface mount by adding suffix
“UR”
Devices with guaranteed limits on all six parameters are indicated by suffix A for ±10% tolerance, suffix B for a ±5% tolerance, suffix C for a 2% tolerance and suffix D for a 1%
tolerance.
MAXIMUM RATINGS
Operating and Storage Temperature
DC Power Dissipation
Power Derating
Forward Voltage @ 200mA
-65°C to + 200°C
500 mW
3.33 mW/C° above 25°C
1.1 Volts
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Test
Current
I
ZT
mA
Max Zener Impedance
A&B Suffix Only
(2)
Max Reverse Leakage Current
A, B, & D Suffix
Only
I
R
V
R
µA
@
Volts
A
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
30
30
30
30
29
28
24
23
22
19
17
11
7.0
7.0
5.0
6.0
8.0
8.0
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
100
100
75
75
50
25
15
10
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
1.9
1.9
2.9
3.3
3.8
4.8
5.7
6.2
6.2
6.7
7.6
8.0
8.7
9.4
9.5
10.5
11.4
12.4
13.3
13.3
14.3
16.2
17.1
18.1
20
20
22
24
26
29
31
B,C &D
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
Non Suffix
I
R
@ V
R
Used For
Suffix A
µA
200
200
150
150
100
100
100
75
50
50
50
50
50
50
30
30
30
30
30
30
30
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Max Zener Voltage
Temp. Coeff.
(A&B Suffix Only)
α
VZ
(%/°C)
(3)
-0.085
-0.085
-0.080
-0.080
-0.075
-0.070
-0.065
-0.060
±0.055
±0.030
±0.030
+0.038
+0.038
+0.045
+0.050
+0.058
+0.062
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
+0.083
+0.084
+0.085
+0.086
+0.086
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
Part Number
(1)
Nominal
Zener Voltage
V
Z
@ I
ZT
Volts
Z
ZT
@ I
ZT
Ohms
Z
ZT
@ I
ZK
=0.25mA
Ohms
Rev. 20190114
1N5221B(UR)-1N5281B(UR)
SILICON ZENER DIODES
High-reliability discrete products
and engineering services since 1977
Part Number
(1)
Nominal
Zener Voltage
V
Z
@ I
ZT
Volts
Test
Current
I
ZT
mA
Max Zener Impedance
A&B Suffix Only
(2)
I
R
µA
Max Reverse Leakage Current
A, B, & D Suffix
Only
V
R
@
Volts
A
B,C&D
36
39
43
46
47
52
56
62
68
69
76
84
91
99
106
114
122
129
137
144
152
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Non Suffix
I
R
@ V
R
Used For
Suffix A
µA
Max Zener Voltage
Temp. Coeff.
(A&B Suffix Only)
α
VZ
(%/°C)
(3)
Z
ZT
@ I
ZT
Ohms
105
125
150
170
185
230
270
330
370
400
500
750
900
1100
1300
150
170
190
2200
2400
2500
Z
ZT
@ I
ZK
=0.25mA
Ohms
1000
1100
1300
1400
1400
1600
1700
2000
2200
2300
2600
3000
4000
4500
4500
5000
5500
5500
6000
6500
7000
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
1N5268B
1N5269B
1N5270B
1N5271B
1N5272B
1N5273B
1N5274B
1N5275B
1N5276B
1N5277B
1N5278B
1N5279B
1N5280B
1N5281B
47
51
56
60
62
68
75
82
87
91
100
110
120
130
140
150
160
170
180
190
200
2.7
2.5
2.2
2.1
2.0
1.8
1.7
1.5
1.4
1.4
1.3
1.1
1.0
0.95
0.90
0.85
0.80
0.74
0.68
0.66
0.65
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
34
37
41
44
45
49
53
59
65
66
72
80
86
94
101
108
116
123
130
137
144
+0.095
+0.096
+0.096
+0.097
+0.097
+0.097
+0.098
+0.098
+0.099
+0.099
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
NOTE 1: The electrical characteristics are measured after allowing the device to stabilize
for 20 seconds when mounted with a 3/8” minimum lead length from the case.
NOTE 2: The zener impedance is derived from the 60HZ ac voltage, which results when an ac current having an r.m.s. value equal to 10% of the DC zener current
(I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve, thereby eliminating unstable units.
NOTE 3: Temperature
coefficient (α
VZ
). Test conditions for temperature coefficient are a follows:
a.
I
ZT
= 7.5 mA, T
1
= 25°C,
T
2
= 125°C (1N5221A, thru 1N5242A, B.)
b.
I
ZT
= Rated I
ZT
, T
1
= 25°C,
T
2
= 125°C (1N5243A, B thru 1N5281A, B.)
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.
ABI Research最近评选并公布了全球超高频无源和高频无源 RFID芯片的前十大制造商。 前十大超高频无源芯片制造商是： 前十大高频无源芯片制造商是： 超高频的得奖名单并不出人意外，因为实际上似乎总是前三家公司获得大订单。ABI分析家 Mike Liard称，ABI很容易就评选出 Alien、Avery,和 Raflatac为全球...[详细]
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