DATA SHEET
SMP1331-085LF: 50 W Surface Mount Shunt Connected
PIN Diode
Applications
Low-loss, high-power switches
Low distortion attenuators
Anode
(Pin 1)
Anode
(Pin 3)
Features
Low-thermal resistance: 28
°C/W
Suitable for 50 W Continuous Wave T/R switches
Low capacitance: 0.35 pF
Low distortion performance
QFN (3-pin, 2 × 2 mm) package
(MSL1, 260
C
per JEDEC J-STD-020)
Skyworks
Green™ products are compliant with
all applicable legislation and are halogen-free.
For additional information, refer to
Skyworks
Definition of Green™,
document number
SQ04-0074.
Cathode
(Pin 2, Exposed Paddle)
Figure 1. SMP1331-085LF Block Diagram
Description
The SMP1331-085LF is a surface mountable, low capacitance
silicon PIN diode designed as a shunt connected PIN diode for
high power, high volume switch and attenuator applications from
10 MHz to beyond 6
GHz.
Maximum resistance at 100 mA is 0.5
and typical capacitance
at 30 V is 0.35 pF. The combination of low junction capacitance,
low parasitic inductance, low thermal resistance, and nominal
30
m
I-region width, makes the SMP1331-085LF useful in large
signal switches and attenuator applications.
The device has a 2.5 W dissipation power rating, making it
capable of handling more than 50 W @ 85 °C Continuous Wave
(CW) in a shunt-connected transmit/receive (T/R) switch.
Design information for high power switches may be found in the
Skyworks Application Note,
Design With PIN Diodes
(document
number 200312).
A block diagram of the SMP1331-085LF is shown in Figure 1.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
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DATA SHEET • SMP1331-085LF: 50 W SURFACE MOUNT SHUNT CONNECTED PIN DIODE
Electrical and Mechanical Specifications
The absolute maximum ratings of the SMP1331-085LF are
provided in Table 1. Electrical specifications are provided in
Table 2.
Table 1. SMP1331-085LF Absolute Maximum Ratings
Parameter
Reverse voltage
Forward current @ 25
°C
CW power dissipation @ 85
°C
Peak pulse power dissipation @ 85
°C
(10% duty cycle)
Storage temperature
Operating temperature
Electrostatic discharge:
Charged Device Model (CDM), Class 4
Human Body Model (HBM), Class 1C
Machine Model (MM), Class C
Note:
Typical DC performance characteristics of the SMP1331-085LF
are illustrated in Figures 2 and 3.
Symbol
V
R
I
F
P
D
Minimum
Maximum
200
200
2.5
25
Units
V
mA
W
W
C
C
T
STG
T
A
ESD
–65
–40
+200
+150
1100
1000
400
V
V
V
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other
parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device.
CAUTION:
Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device
must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body
or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times.
Table 2. SMP1331-085LF Electrical Specifications (Note 1)
(T
A
= +25
C
Unless Otherwise Noted)
Parameter
Reverse current
Capacitance
Resistance
I
R
C
T
R
S
Symbol
Test Condition
V
R
= 200 V
f = 1 MHz, V
R
= –30 V
f = 100 MHz:
I
F
= 1.0 mA
I
F
= 10.0 mA
I
F
= 100 mA
Forward voltage
Carrier lifetime
I region width
CW thermal resistance
Peak thermal resistance
V
F
T
L
W
I
F
= 10 mA
I
F
= 10 mA
14.5
1.7
0.5
0.8
600
30
Junction-to-case
Single 1
μs
pulse width,
junction-to-case (10% duty cycle)
28
2.8
V
ns
m
C/W
C/W
Min
Typical
Max
10
0.35
Units
μA
pF
JC
P
Note 1:
Performance is guaranteed only under the conditions listed in this table.
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June 19, 2015 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 203591B
DATA SHEET • SMP1331-085LF: 50 W SURFACE MOUNT SHUNT CONNECTED PIN DIODE
Typical DC Performance Characteristics
(T
A
= 25
C,
Unless Otherwise Noted)
100.0
1.0
0.9
Series
Resistance (Ω)
0.8
10.0
Forward Voltage (V)
0.7
0.6
0.5
0.4
0.3
1.0
ts612
0.1
0.1
1
10
100
0.2
0.1
1
10
100
Forward
Current
(mA)
Forward
Current
(mA)
Figure 2. Series Resistance vs Current @ 100 MHz
Figure 3. Forward Voltage vs Forward Current
High-Power Switch Design Application
The SMP1331-085LF PIN diode is designed for shunt applications
such as reflective switches or shunt-diode attenuator circuits.
Compared to other surface mount packages, the design of the
QFN package produces lower thermal resistance and also reduces
the effects of the parasitic inductance of the anode bond wires.
A cross-sectional view of the SMP1331-085LF PIN diode is shown
in Figure 4. The cathode of the die is soldered directly to the top
of the exposed paddle. This paddle is composed of copper, so its
thermal resistance is very low.
The copper ground paddle minimizes the total thermal resistance
between the I layer, which is the location where most heat is
generated under normal operation, and the surface to which the
package is mounted. Minimal thermal resistance between the I
layer and the external environment minimizes junction
temperature.
The electrically equivalent circuit of the SMP1331-085LF PIN
diode is shown in Figure 5. The inductances of pins 1 and 2, as
well as the inductances of the bond wires are in series with the
input and output transmission lines of the external circuit rather
than the portion of the circuit that contains the shunt PIN diode.
The effects of these parasitic series inductances are negligible,
since they add a very small insertion loss to the shunt PIN but
have no effect on the isolation that the diode produces when it is
forward biased.
A cross section of the suggested printed circuit board design is
shown in Figure 6. The via shown in this view is critical, both for
electrical performance and for thermal performance. It is
recommended that several vias should be placed under the entire
footprint of the exposed paddle (pin 2) to minimize both electrical
inductance to the system ground and thermal resistance to the
system heat sink.
A high-power switch has been designed and tested. This circuit is
shown in Figure 7, and Table 3 lists the Evaluation Board Bill of
Materials for the circuit.
Typical RF performance of the SMP1331-087LF using the circuit
shown in Figure 7 is summarized in Table 3 and illustrated in
Figures 8 through 10.
An assembly drawing for the Evaluation Board is shown in
Figure 11. The layer detail physical characteristics are provided in
Figure 12.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
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ts613
DATA SHEET • SMP1331-085LF: 50 W SURFACE MOUNT SHUNT CONNECTED PIN DIODE
Bond Wire
(2 Places)
Encapsulated
Epoxy
SMP1331-085LF
Die
Anode
(Pin 1)
Not to scale
Cathode
(Pin 2)
Anode
(Pin 3)
Y2094
Figure 4. Cross-Sectional View of the SMP1331-085LF
L
SERIES
Pin 1
L
SERIES
Pin 3
C
PKG
SMP1331-085LF
Die
C
PKG
L
PADDLE
Pin 2
Figure 5. SMP1331-085LF Electrically Equivalent Circuit
Y2095
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
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June 19, 2015 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 203591B
DATA SHEET • SMP1331-085LF: 50 W SURFACE MOUNT SHUNT CONNECTED PIN DIODE
SMP1331-085LF
Thermal Via
Y2096
Figure 6. Cross-Sectional View of Suggested Printed Circuit Board
I
F
= 50 mA
OR
100 pF
DC
V
R
= –30 V
22 nH
100 pF
50
Ω
Term
100 pF
50
Ω
Term
SMP1331-085LF
ts614
Figure 7. High-Power Switch Design
Table 3. Evaluation Board Bill of Materials for EN33-D515-001_V4
Component
C
L
Value
100 pF
22 nH
0402
0402
Size
3
1
QTY
Manufacturer
Murata
Taiyo Yuden
Mfg. Part Number
GRM1555C1H101JZ01
HK100522NJ-T
Characteristics
5% C0G 50 V
5% 300 mA SRF 1.9
GHz
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
203591B • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • June 19, 2015
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