LESHAN RADIO COMPANY, LTD.
Single Silicon Switching Diode
This Silicon Epitaxial Planar Diode is designed for use in ultra high speed
switching applications. This device is housed in the SC–70 package which is
designed for low power surface mount applications.
• Fast t
rr
, < 3.0 ns
• Low C , < 2.0 pF
rr
LM1MA141KT1G
LM1MA142KT1G
SC–70/SOT–323 PACKAGE
SINGLE SILICON
SWITCHING DIODE
40/80 V–100 mA
SURFACE MOUNT
3
We declare that the material of product
compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
LM1MA141KT1G
LM1MA141KT3G
LM1MA142KT1G
LM1MA142KT3G
Package
SOT-323/SC-70
SOT-323/SC-70
SOT-323/SC-70
SOT-323/SC-70
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
1
2
SOT–323 /SC – 70
CATHODE
3
DEVICE MARKING
LM1MA141KT1G = MH
LM1MA142KT1G=MI
1
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
LM1MA141KT1G
LM1MA142KT1G
Peak Reverse Voltage L M1MA141KT1G
L M1MA142KT1G
Forward Current
Peak Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
D
T
J
T
stg
Symbol
V
R
V
RM
I
F
I
FM
I
FSM(1)
Value
40
80
40
80
100
225
500
Unit
V
dc
V
dc
mAdc
mAdc
mAdc
ANODE
2
NO CONNECTION
Marking Symbol
Type No. 141K 142K
Symbol
MH
MI
MH
X
The “X” represents a smaller alpha digit Date
Code. The Date Code indicates the actual month
in which the part was manufactured.
Max
150
150
–55 ~ +150
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Reverse Voltage Leakage Current LM1MA141KT1G
LM1MA142KT1G
Forward Voltage
Reverse Breakdown Voltage
LM1MA141KT1G
L M1MA142KT1G
Diode Capacitance
Reverse Recovery
1. t = 1 SEC
2. t
rr
Test Circuit
Time
C
D
trr
(2)
V
R
=0, f=1.0 MHz
I
F
=10mA,V
R
=6.0V
R
L
=100Ω,I
rr
=0.1 I
R
Symbol
I
R
V
F
V
R
Condition
V
R
= 35 V
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
µA
Min
—
—
—
40
80
—
—
Max
0.1
0.1
1.2
—
—
2.0
3.0
Unit
µAdc
Vdc
Vdc
pF
ns
1/3
LESHAN RADIO COMPANY, LTD.
LM1MA141KT1G LM1MA142KT1G
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
I
F
, FORWARD CURRENT (mA)
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
I
R
, REVERSE CURRENT (µA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
C
D
, DIODE CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
2/3
LESHAN RADIO COMPANY, LTD.
LM1MA141KT1G LM1MA142KT1G
SC-70/SOT-323
NOTES:
1.
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
L
3
DIM
A
B
C
D
G
H
J
K
L
N
S
S
1
2
B
D
G
C
0.05 (0.002)
N
K
J
INCHES MILLIMETERS
MIN
MA X
MIN
MA X
0.071 0.087
1.80
2.20
0.045 0.053
1.15
1.35
0.032 0.040
0.80
1.00
0.012 0.016
0.30
0.40
0.047 0.055
1.20
1.40
0.000 0.004
0.00
0.10
0.004 0.010
0.10
0.25
0.017 REF
0.425 REF
0.026 BSC
0.650 BSC
0.028 REF
0.700 REF
0.079 0.095
2.00
2.40
H
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
3/3
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