LESHAN RADIO COMPANY, LTD.
Common Anode Silicon
Dual Switching Diode
This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use
in ultra high speed switching applications. This device is housed in the SC–70
package which is designed for low power surface mount applications.
• Fast t
rr
, < 10 ns
• Low C
D
, < 15 pF
We declare that the material of product
compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
LM1MA141WAT1G
LM1MA141KWA3G
LM1MA142WAT1G
LM1MA142WAT3G
Package
SOT-323/SC-70
SOT-323/SC-70
SOT-323/SC-70
SOT-323/SC-70
Shipping
LM1MA141WAT1G
LM1MA142WAT1G
SC-70/SOT-323 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODE
40/80 V-100 mA
SURFACE MOUNT
3
1
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
2
CASE 419–04, STYLE 4
SOT–323 /SC – 70
ANODE
3
DEVICE MARKING
LM1MA141WAT1G = MN LM1MA142WAT1G=MO
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Symbol
Reverse Voltage
LM1MA141WAT1G V
R
LM1MA142WAT1G
Peak Reverse Voltage
LM1MA141WAT1G V
RM
Forward Current
Peak Forward Current
Peak Forward Surge Current
LM1MA142WAT1G
Single
Dual
Single
Dual
Single
Dual
I
F
I
FM
I
FSM(1)
1
2
CATHODE
Value
40
80
40
80
100
150
225
340
500
750
Unit
V
dc
Marking Symbol
V
dc
mAdc
mAdc
mAdc
Type No. 141WA142WA
Symbol
MN
MO
MN
X
The “X” represents a smaller alpha digit Date
Code. The Date Code indicates the actual month
in which the part was manufactured.
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
D
T
J
T
stg
Max
150
150
–55 ~ +150
Unit
mW
°C
°C
Condition
V
R
= 35 V
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
µA
V
R
=0, f=1.0 MHz
I
F
=10mA,V
R
=6.0V
R
L
=100Ω,I
rr
=0.1 I
R
Min
—
—
—
40
80
—
—
Max
0.1
0.1
1.2
—
—
15
10
Unit
µAdc
Vdc
Vdc
pF
ns
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Symbol
Reverse Voltage Leakage Current LM1MA141WAT1G I
R
LM1MA142WAT1G
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery
1. t = 1 SEC
2. t
rr
Test Circuit
V
F
LM1MA141WAT1G V
R
LM1MA142WAT1G
Time
C
D
t
rr(2)
1/3
LESHAN RADIO COMPANY, LTD.
LM1MA141WAT1G LM1MA142WAT1G
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
t
r
t
p
t
A
R
L
10%
I
rr
= 0.1 I
R
90%
V
R
t
p
= 2
µs
t
r
= 0.35 ns
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
Ω
I
F
OUTPUT PULSE
t
rr
t
100
IF, FORWARD CURRENT (mA)
T
A
= 85°C
10
T
A
= -40°C
IR , REVERSE CURRENT (µA)
10
T
A
= 150°C
T
A
= 125°C
1.0
0.1
T
A
= 85°C
T
A
= 55°C
1.0
T
A
= 25°C
0.01
T
A
= 25°C
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
50
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 1. Forward Voltage
Figure 2. Reverse Current
1.75
CD , DIODE CAPACITANCE (pF)
1.5
1.25
1.0
0.75
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
1/3
LESHAN RADIO COMPANY, LTD.
LM1MA141WAT1G LM1MA142WAT1G
SC-70/SOT-323
NOTES:
1.
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
L
3
DIM
A
B
C
D
G
H
J
K
L
N
S
S
1
2
B
D
G
C
0.05 (0.002)
N
K
J
INCHES MILLIMETERS
MIN
MA X
MIN
MA X
0.071 0.087
1.80
2.20
0.045 0.053
1.15
1.35
0.032 0.040
0.80
1.00
0.012 0.016
0.30
0.40
0.047 0.055
1.20
1.40
0.000 0.004
0.00
0.10
0.004 0.010
0.10
0.25
0.017 REF
0.425 REF
0.026 BSC
0.650 BSC
0.028 REF
0.700 REF
0.079 0.095
2.00
2.40
H
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
1/3
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