BL
FEATURES
1N4728 --- 1N4764
ZENER DIODES
POWER DISSIPATION: 1.0 W
Silicon planar power zener diodes
For use in stabilizing and clipping circuits with high
power rating.
Standard zener voltage tolerance is ±10%. Add
suffix "A" for ±5% tolerance. other zener voltage
and tolerances are available upon request.
DO-41(GLASS)
MECHANICAL DATA
Case:DO-41, glass case
Terminals: solderable per MIL-STD-202, method 208
Polarity: cathode band
Marking: type number
Approx. weight: 0.35 grams.
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Zener current (see Table "Characteristics")
VALUE
UNIT
Pow er dissipation @ T
amb
50
Z-current
P
Diss
I
Z
1.0
1)
P
V
/V
Z
W
mA
Junction temperature
T
J
175
Storage temperature range
T
s
-55---+175
Junction ambient I=9.5mm(3/8 ), T
L
=constant
R
ThJA
100
K/W
SYMBOL
Forw ard voltage at I
F
=200mA
MIN
TYP
MAX
1.2
UNIT
V
www.gmesemi.com
V
F
Document Number 1N47
BL
GALAXY ELECTRICAL
1.
ELECTRICAL CHARACTERISTICS
Nominal
zener
voltage 1)
Type
V z@I
ZT
(V )
1N4728
1N4729
1N4730
1N4731
1N4732
1N4733
1N4734
1N4735
1N4736
1N4737
1N4738
1N4739
1N4740
1N4741
1N4742
1N4743
1N4744
1N4745
1N4746
1N4747
1N4748
1N4749
1N4750
1N4751
1N4752
1N4753
1N4754
1N4755
1N4756
1N4757
1N4758
1N4759
1N4760
1N4761
1N4762
1N4763
1N4764
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
I
ZT
(mA )
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
Z
ZT
@I
ZT
( )
10
10
9
9
8
7
5
2
3.5
4.0
4.5
5.0
7
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
Z
ZK
@I
ZK
( )
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
I
ZK
(m A)
(TA=25
)
Max surge
current
8.3ms
I
R
@T
amb
=25
(mA )
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
90
80
70
65
60
55
50
45
Maximum
regulator
current 2)
I
ZM
@T
amb
=50
(mA )
276
252
234
217
193
178
162
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
34
30
27
25
23
22
19
18
16
14
13
12
11
10
9
Test
current
Maximum dynamic impedance
Maximum reverse
leakage current
I
R
( A)
100
100
50
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
+1
@V
R
(V )
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1)Based on dc_m easurem ent at theral equilibrium while m aitaining the lead tem perature (T
L
) at 30
2)Valid prov ided that electrodes at a distance of 10 m m f orm case kept at am bient tem perature.
*)Additionnal m easurem ent of v oltage gruup 9v 1 to 75 at 95% V
ZMIN
35nA at T
J
25
,9.5m m (3/8")f rom the D iode body .
www.gmesemi.com
Document Number 1N47
BL
GALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- BREAKDOWN CHARACTERISTICS
1N4728 -- 1N4764
mA
100
5
10
15
20
25
30 V
80
I
Z
60
40
20
0
FIG.2 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
W
1.0
1N4728
1N4733
1N4735
1N4742
1N4744
1N4747
1N4731
1N4732
1N4739
1N4741
1N4748
1N4749
1N4750
V
Z
0.8
P
tot
0.6
0.4
0.2
0
0
100
T
amb
200
www.gmesemi.com
Document Number 1N47
BL
GALAXY ELECTRICAL
3.
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
