ESMT
PSRAM
Features
• Wide voltage range: 2.7V–3.6V
• Access time: 55 ns, 60 ns and 70 ns
• Ultra-low active power
— Typical active current: 1 mA @ f = 1 MHz
— Typical active current: 8 mA @ f = fmax (70-ns speed)
• Ultra low standby power
• Automatic power-down when deselected
• CMOS for optimum speed/power
M24L416256SA
4-Mbit (256K x 16) Pseudo Static RAM
The input/output pins (I/O0through I/O
15
) are placed in a
high-impedance state when : deselected ( CE HIGH), outputs
are disabled (
OE
HIGH), both Byte High Enable and Byte
Low Enable are disabled (
BHE
,
BLE
HIGH), or during a write
operation ( CE LOW and
WE
LOW).
Writing to the device is accomplished by taking Chip
Enable( CE LOW) and Write Enable (
WE
) input LOW. If Byte
Low Enable (
BLE
) is LOW, then data from I/O pins (I/O
0
through I/O
7
) is written into the location specified on the
address pins(A
0
through A
17
). If Byte High Enable (
BHE
) is
LOW, then data from I/O pins (I/O
8
through I/O
15
) is written into
the location specified on the address pins (A
0
through A
17
).
Reading from the device is accomplished by taking Chip
Enable ( CE LOW) and Output Enable ( OE ) LOW while
forcing the Write Enable (
WE
) HIGH. If Byte Low Enable
(
BLE
) is LOW, then data from the memory location specified
by the address pins will appear on I/O
0
to I/O
7
. If Byte High
Enable(
BHE
) is LOW, then data from memory will appear on
I/O
8
toI/O
15
. Refer to the truth table for a complete description
of read and write modes.
Functional Description
The M24L416256SA is a high-performance CMOS Pseudo
static RAM organized as 256K words by 16 bits that supports
an asynchronous memory interface. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for portable applications such as cellular
telephones. The device can be put into standby mode when
deselected ( CE HIGH or both
BHE
and
BLE
are HIGH).
Logic Block Diagram
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.4
1/14
ESMT
Pin Configuration[2, 3, 4]
M24L416256SA
44-pin TSOPII
Top View
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
V
CC
V
SS
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
BHE
BL E
I/O 1 5
I/O 1 4
I/O 1 3
I/O 1 2
V
SS
V
CC
I/ O1 1
I/ O1 0
I/ O9
I/ O8
NC
A8
A9
A1 0
A11
A1 7
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.4
2/14
ESMT
Product Portfolio
V
CC
Range(V)
Speed
(ns)
Max.
55
M24L416256SA
2.7
3.0
3.6
60
70
1
5
Operating, I
CC
(mA)
f = 1 MHz
Typ.[5]
Max.
M24L416256SA
Power Dissipation
Product
Min.
Standby, I
SB2
(µA)
Typ.[5]
Max.
f = fmax
Typ.[5]
14
8
Max.
22
15
Typ.[5]
17
40
Notes:
2. Ball H1, G2 and ball H6 for the VFBGA package can be used to upgrade to an 8-Mbit, 16-Mbit and 32-Mbit density, respectively.
3. NC “no connect” – not connected internally to the die.
4. DNU (Do Not Use) pins have to be left floating or tied to Vss to ensure proper application.
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= VCC(typ.),
T
A
= 25°C.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.4
3/14
ESMT
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–55°C to +125°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[6, 7, 8] .......................................−0.4V to 3.7V
DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
M24L416256SA
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Extended
Industrial
Ambient Temperature (T
A
)
−25°C
to +85°C
−40°C
to +85°C
V
CC
2.7V to 3.6V
2.7V to 3.6V
DC Electrical Characteristics (Over the Operating Range)
Parameter
V
CC
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
Description
Supply Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply Current
Test Conditions
Min.
2.7
V
CC
– 0.4
0.4
0.8 * V
CC
-0.4
GND
≤
V
IN
≤
Vcc
GND
≤
V
OUT
≤
Vcc, Output
Disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
Automatic CE
Power-down
Current —CMOS
Inputs
Automatic CE
Power-down
Current —CMOS
Inputs
V
CC
= V
CCmax
,
I
OUT
= 0 mA,
CMOS level
-1
-1
14 for –55
14 for –60
8 for –70
1 for all speeds
V
CC
+ 0.4
0.6
+1
+1
22 for –55
22 for –60
15 for –70
5 for all speeds
-55, 60, 70
Typ.[5]
3.0
Max.
3.6
Unit
V
V
V
V
V
µA
µA
I
OH
=
−0.1
mA
I
OL
= 0.1 mA
V
CC
= 2.7V
V
CC
= 2.7V
I
CC
mA
I
SB1
CE
≥
V
CC
−
0.2V, V
IN
≥
V
CC
−
0.2V, V
IN
≤
0.2V, f = f
MAX
(Address
and Data Only),f = 0
( OE ,
WE
,
BHE
and
BLE
), V
CC
=
3.6V
CE
≥
V
CC
−
0.2V,
V
IN
≥
V
CC
−
0.2V or V
IN
≤
0.2V,
f = 0, V
CC
= 3.6V
150
250
µA
I
SB2
17
40
µA
Thermal Resistance[9]
Parameter
θ
JA
θ
JC
Description
Test Conditions
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51.
VFBGA
55
17
Unit
°C/W
°C/W
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Capacitance[9]
Parameter
C
IN
C
OUT
Notes:
6.V
IL(MIN)
= –0.5V for pulse durations less than 20 ns.
7.V
IH(Max)
= V
CC
+ 0.5V for pulse durations less than 20 ns.
8.Overshoot and undershoot specifications are characterized and are not 100% tested.
9.Tested initially and after any design or process changes that may affect these parameters.
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz
V
CC
= V
CC(typ)
Max.
8
8
Unit
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.4
4/14
ESMT
AC Test Loads and Waveforms
M24L416256SA
Parameters
R1
R2
R
TH
V
TH
3.0V V
CC
22000
22000
11000
1.50
Unit
Ω
Ω
Ω
V
Switching Characteristics (Over the Operating Range)[10]
Prameter
Read Cycle
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
DBE
t
LZBE
Description
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z[11, 13]
OE HIGH to High Z[11, 13]
CE LOW to Low Z[11, 13]
CE HIGH to High Z[11, 13]
BLE / BHE LOW to Data Valid
BLE
/
BHE
LOW to Low Z[11, 13]
–55
Min.
55
55
5
55
25
5
25
2
25
55
5
10
0
55
45
45
0
0
40
60
45
45
0
0
40
5
2
5
8
Max.
Min.
60
–60
Max.
Min.
70
60
10
60
25
5
25
5
25
60
5
10
5
70
60
55
0
0
45
–70
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
70
70
35
25
25
70
25
10
t
HZBE
BLE
/
BHE
HIGH to High-Z[11, 13]
[14]
t
SK
Address Skew
Write Cycle[12]
t
WC
Write Cycle Time
t
SCE
CE LOW to Write End
t
AW
Address Set-up to Write End
t
HA
Address Hold from Write End
t
SA
Address Set-up to Write Start
t
PWE
WE
Pulse Width
Notes:
10. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 ns/V, timing reference
levels of V
CC(typ)
/2, input pulse levels of 0V to V
CC(typ.)
, and output loading of the specified I
OL
/I
OH
as shown in the “AC Test
Loads and Waveforms” section.
11. t
HZOE
, t
HZCE
, t
HZBE
, and t
HZWE
transitions are measured when the outputs enter a high impedance state.
12. The internal Write time of the memory is defined by the overlap of
WE
, CE = V
IL
,
BHE
and/or
BLE
= V
IL
. All signals
must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input set-up
and hold timing should be referenced to the edge of the signal that terminates the write.
13. High-Z and Low-Z parameters are characterized and are not 100% tested.
14. To achieve 55-ns performance, the read access should be CE controlled. In this case t
ACE
is the critical parameter and t
SK
is
satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable
within 10 ns after the start of the read cycle.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.4
5/14
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
