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1N823A-1-PBF

产品描述Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-7
产品类别分立半导体    二极管   
文件大小235KB,共2页
制造商Digitron
官网地址http://www.digitroncorp.com
标准
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1N823A-1-PBF概述

Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-7

1N823A-1-PBF规格参数

参数名称属性值
是否Rohs认证符合
包装说明O-XALF-W2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-7
JESD-30 代码O-XALF-W2
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散0.5 W
标称参考电压6.2 V
表面贴装NO
技术ZENER
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
电压温度Coeff-Max0.31 mV/°C
最大电压容差4.84%
Base Number Matches1

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High-reliability discrete products
and engineering services since 1977
FEATURES
1N821-1N829A
TEMPERATURE COMPENSATED ZENER
REFERENCE DIODE
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Operating and storage temperature range
DC power dissipation
Solder temperatures
-65°C to +175°C
500mW @ T
L
= 25°C and maximum current l
ZM
OF 70mA.
For optimum voltage-temperature stability, l
Z
= 7.5mA
(less than 50 mW in dissipated power)
260°C for 10 s (max)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Part number
Zener voltage
(Note 1 and 4)
V
Z
@ l
ZT
VOLTS
Zener Test
Current
l
ZT
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
Maximum zener
impedance
(Note 2)
Z
ZT
@ l
ZT
Maximum
reverse
current
l
R
@ 3V
μA
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
Voltage temperature
stability
(ΔV
ZT
MAX)
-55°C to = 100°C
(Note 3 and 4)
Effective
temperature
coefficient
α
VZ
%/°C
0.01
0.01
0.01
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
OHMS
15
10
15
15
10
15
15
10
15
15
10
15
15
10
mV
96
96
96
48
48
48
19
19
20
9
9
10
5
5
1N821
1N821A
1N822†
1N823
1N823A
1N824†
1N825
1N825A
1N826
1N827
1N827A
1N828
1N829
1N829A
5.9-6.5
5.9-6.5
5.9-6.5
5.9-6.5
5.9-6.5
5.9-6.5
5.9-6.5
5.9-6.5
6.2-6.9
5.9-6.5
5.9-6.5
6.2-6.9
5.9-6.5
5.9-6.5
Double Anode; electrical specifications apply under both bias polarities.
NOTES:
1.
Add a “-1” suffix for internal metallurgical bond.
2.
Zener impedance measured by superimposing 0.75 mA ac rms on 7.5mA dc @ 25°C.
3.
The maximum allowable change observed over the entire temperature range, i.e. the diode voltage will not exceed the specified mV change at
discrete temperature between the established limits.
4.
Voltage measurements to be performed 15 seconds after application of dc current.
Rev. 20160114

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