HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
, Q-Class
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, High dv/dt
V
DSS
IXFR 44N50Q
IXFR 48N50Q
I
D25
R
DS(on)
500
V 34 A 120 mΩ
Ω
Ω
500
V 40 A 110 mΩ
t
rr
≤
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
Symbol
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Note 1
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
500
500
±20
±30
44N50Q
48N50Q
44N50Q
48N50Q
44N50Q
48N50Q
34
40
176
192
44
48
60
2.5
15
310
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
g
ISOPLUS 247
TM
E153432
Isolated backside*
G = Gate
S = Source
D = Drain
* Patent pending
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
IXYS advanced low Q
g
process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic diode
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
300
2500
5
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
500
2.0
V
4.0 V
±100
nA
T
J
= 125°C
44N50Q
48N50Q
100
µA
2 mA
120 mΩ
110 mΩ
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 2, 3
© 2003 IXYS All rights reserved
DS98702D(08/03)
IXFR 44N50Q
IXFR 48N50Q
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
Notes 2, 3
30
42
7000
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
960
230
33
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= I
T
R
G
= 1
Ω
(External), Notes 2, 3
22
75
10
190
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= I
T
Notes 2, 3
40
86
0.40
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
ISOPLUS 247 OUTLINE
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= I
T
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive; Note 1
I
F
= I
T
, V
GS
= 0 V, Notes 2, 3
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
48
192
1.5
250
A
A
V
ns
µC
A
I
F
= 25A,-di/dt = 100 A/µs, V
R
= 100 V
1.0
10
Note: 1. Pulse width limited by T
JM
2. Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
3. IXFR44N50Q: I
T
= 22 A
IXFR48N50Q: I
T
= 24 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXFR 44N50Q
IXFR 48N50Q
Fig. 1. Output Characteristics
@ 25 Deg. C
48
42
36
V
GS
= 10V
7V
6V
120
Fig. 2. Extended Output Characteristics
@ 25 deg. C
V
GS
= 10V
8V
7V
90
I
D
- Amperes
24
18
12
6
0
0
1
2
3
4
5
6
7
8
I
D
- Amperes
30
60
6V
30
5V
0
5V
V
D S
- Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
48
42
36
V
GS
= 10V
7V
6V
2.8
2.6
2.4
0
2
4
6
8
V
D S
- Volts
10
12
14
16
18
20
Fig. 4. R
DS(on)
Norm alized to I
D25
Value vs.
Junction Tem perature
V
GS
= 10V
R
D S (on)
- Normalized
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
I
D
= 48A
I
D
= 24A
I
D
- Amperes
30
24
18
12
6
0
0
2
4
6
8
10
12
14
16
5V
-50
-25
0
25
50
75
100
125
150
V
D S
- Volts
Fig. 5. R
DS(on)
Norm alized to I
D25
Value vs. I
D
3.4
3.1
V
GS
= 10V
T
J
= 125ºC
45
40
35
T
J
- Degrees Centigrade
Fig . 6. Dr ain C u r r e n t vs . C as e
T e m p e r atu r e
R
D S (on)
- Normalized
2.8
2.5
2.2
1.9
1.6
1.3
1
0.7
0
12
24
36
48
60
72
I
D
- Amperes
T
J
= 25ºC
84
96
108 120
30
25
20
15
10
5
0
-50
-25
0
25
50
75
1 00
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2003 IXYS All rights reserved
IXFR 44N50Q
IXFR 48N50Q
Fig. 7. Input Adm ittance
60
54
48
80
70
60
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
42
36
30
24
18
12
6
0
3.5
4
4.5
5
5.5
6
6.5
T
J
= 125ºC
25ºC
-40ºC
50
40
30
20
10
0
0
T
J
= -40ºC
25ºC
125ºC
6
12
18
24
30
36
42
48
54
60
V
G S
- Volts
Fig. 9. Source Current vs. Source-To-
Drain Voltage
100
90
80
10
9
8
7
V
DS
= 250V
I
D
= 24A
I
G
= 10mA
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
70
V
G S
- Volts
T
J
= 25ºC
0.8
0.9
1
1.1
1.2
60
50
40
30
20
10
0
0.3
0.4
0.5
0.6
0.7
T
J
= 125ºC
6
5
4
3
2
1
0
0
20
40
60
80
100 120 140 160 180 200
V
S D
- Volts
Fig. 11. Capacitance
10000
f = 1MHz
C iss
1
Q
G
- nanoCoulombs
Fig . 12. M axim u m T r an s ie n t T h e r m al
Re s is tan ce
Capacitance - pF
1000
C oss
R
(th) J C
- (ºC/W)
35
40
0. 1
C rss
100
0
5
10
15
20
25
30
0. 01
1
V
D S
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
Puls e W idth - millis ec onds
10
100
1000
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
stm32/stm8
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