PD - 97535A
IRLML6244TRPbF
V
DS
V
GS Max
R
DS(on) max
(@V
GS
= 4.5V)
20
±12
21.0
27.0
V
V
m
m
6
*
HEXFET
®
Power MOSFET
'
Micro3
TM
(SOT-23)
IRLML6244TRPbF
R
DS(on) max
(@V
GS
= 2.5V)
Application(s)
Load/
System Switch
Features and Benefits
Features
Low R
DS(on)
( < 21m)
Industry-standard SOT-23 Package
RoHS compliant containing no lead, no bromide and no halogen
Benefits
Lower conduction losses
results in Multi-vendor compatibility
Environmentally friendly
Absolute Maximum Ratings
Symbol
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
6.3
5.1
32
1.3
0.80
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Symbol
R
JA
R
JA
Parameter
Junction-to-Ambient
e
Typ.
–––
–––
Max.
100
99
Units
°C/W
Junction-to-Ambient (t<10s)
f
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes
through
are on page 10
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1
03/09/12
IRLML6244TRPbF
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
20
–––
–––
–––
0.5
–––
–––
–––
–––
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.8
16.0
22.0
0.9
–––
–––
–––
–––
1.7
–––
8.9
0.68
4.4
4.9
7.5
19
12
700
140
98
–––
–––
21.0
27.0
1.1
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
V
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 4.5V, I
D
= 6.3A
V
GS
= 2.5V, I
D
V
DS
= V
GS
, I
D
= 10μA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 12V
V
GS
= -12V
V
DS
= 10V, I
D
= 6.3A
I
D
= 6.3A
V
DS
=10V
V
DD
V
GS
= 4.5V
I
D
= 1.0A
R
G
= 6.8
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 16V
ƒ = 1.0MHz
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mV/°C Reference to 25°C, I
D
= 1mA
m
V
μA
nA
S
d
= 5.1A
d
d
=10V
d
Source - Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
12
5.1
1.3
A
32
1.2
18
7.7
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 6.3A, V
GS
= 0V
T
J
= 25°C, V
R
= 15V, I
F
=1.3A
di/dt = 100A/μs
d
d
2
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IRLML6244TRPbF
100
TOP
VGS
10V
4.5V
3.0V
2.5V
2.3V
2.0V
1.8V
1.5V
100
TOP
VGS
10V
4.5V
3.0V
2.5V
2.3V
2.0V
1.8V
1.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1.5V
1
1
1.5V
60μs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.1
0.1
1
60μs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.6
ID = 6.3A
1.4
VGS = 4.5V
ID, Drain-to-Source Current (A)
10
T J = 25°C
T J = 150°C
1
1.2
1.0
0.8
VDS = 15V
60μs
PULSE WIDTH
0.1
0.5
1.0
1.5
2.0
2.5
3.0
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRLML6244TRPbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= 6.3A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 16V
VDS= 10V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
VDS= 4.0V
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
10
1msec
10msec
1
T A = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.1
1
10
100
1
T J = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLML6244TRPbF
7
V
DS
6
ID, Drain Current (A)
R
D
V
GS
R
G
V
GS
Pulse Width
µs
Duty Factor
D.U.T.
+
5
4
3
2
1
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
-
V
DD
Fig 10a.
Switching Time Test Circuit
V
DS
90%
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1000
Thermal Response ( Z thJA ) °C/W
100
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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