Mosorb devices are designed to protect voltage sensitive components from high volt-
age, high energy transients. They have excellent clamping capability, high surge capabili-
ty, low zener impedance and fast response time. These devices are Motorola’s exclusive,
cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use
in communication systems, numerical controls, process controls, medical equipment,
business machines, power supplies and many other industrial/consumer applications, to
protect CMOS, MOS and Bipolar integrated circuits.
Specification Features:
•
Standard Voltage Range — 6.2 to 250 V
•
Peak Power — 1500 Watts @ 1 ms
•
Maximum Clamp Voltage @ Peak Pulse Current
•
Low Leakage < 5
µA
Above 10 V
•
UL Recognition
•
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are readily solderable
POLARITY:
Cathode indicated by polarity band. When operated in zener mode, will be
positive with respect to anode
MOUNTING POSITION:
Any
WAFER FAB LOCATION:
Phoenix, Arizona
ASSEMBLY/TEST LOCATION:
Guadalajara, Mexico
MAXIMUM RATINGS
Rating
Peak Power Dissipation (1)
@ TL
≤
25°C
Steady State Power Dissipation
@ TL
≤
75°C, Lead Length = 3/8″
Derated above TL = 75°C
Forward Surge Current (2)
@ TA = 25°C
Operating and Storage Temperature Range
Lead temperature not less than 1/16″ from the case for 10 seconds: 230°C
NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2.
NOTES:
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
CASE 41A
PLASTIC
Symbol
PPK
PD
Value
1500
5
50
Unit
Watts
Watts
mW/°C
Amps
°C
IFSM
TJ, Tstg
200
– 65 to +175
Devices listed in bold, italic are Motorola preferred devices.
Motorola TVS/Zener Device Data
500 Watt Peak Power Data Sheet
4-1
*ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) VF# = 3.5 V Max, IF** = 100 A) (C suffix denotes standard
ELECTRICAL CHARACTERISTICS
back to back bidirectional versions. Test both polarities)
Breakdown
{{
Maximum
Voltage
Reverse
Stand-Off
Voltage
VBR
Volts @ IT VRWM***
Min
(mA)
(Volts)
Maximum
Reverse
Voltage
Maximum
@ IRSM
{
M i
Maximum Reverse
(Clamping
Surge
Reverse
Voltage)
Current
Leakage
VRSM
IRSM
{
@ VRWM
(Volts)
(Amps)
IR (µA)
Clamping Voltage
Peak Pulse
Current @
Ipp1
{
= 1 A
VC1
(Volts max)
Peak Pulse
Current @
Ipp1
{
= 10 A
VC2
(Volts max)
JEDEC
Device
Note 1
Device
Note 1
1N6373
1N6374
1N6382
1N6375
1N6383
1N6376
1N6384
1N6377
1N6385
1N6378
1N6386
1N6379
1N6387
1N6380
1N6388
1N6381
1N6389
ICTE-5
/MPTE-5
ICTE-8/MPTE-8
ICTE-8C/MPTE-8C
ICTE-10/MPTE-10
ICTE-10C/MPTE-10C
ICTE-12/MPTE-12
ICTE-12C/MPTE-12C
ICTE-15/MPTE-15
ICTE-15C/MPTE-15C
ICTE-18/MPTE-18
ICTE-18C/MPTE-18C
ICTE-22/MPTE-22
ICTE-22C/MPTE-22C
ICTE-36/MPTE-36
ICTE-36C/MPTE-36C
ICTE-45/MPTE-45
ICTE-45C/MPTE-45C
6
9.4
9.4
11.7
11.7
14.1
14.1
17.6
17.6
21.2
21.2
25.9
25.9
42.4
42.4
52.9
52.9
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
5
8
8
10
10
12
12
15
15
18
18
22
22
36
36
45
45
300
25
25
2
2
2
2
2
2
2
2
2
2
2
2
2
2
160
100
100
90
90
70
70
60
60
50
50
40
40
23
23
19
19
9.4
15
15
16.7
16.7
21.2
21.2
25
25
30
30
37.5
37.5
65.2
65.2
78.9
78.9
7.1
11.3
11.4
13.7
14.1
16.1
16.7
20.1
20.8
24.2
24.8
29.8
30.8
50.6
50.6
63.3
63.3
7.5
11.5
11.6
14.1
14.5
16.5
17.1
20.6
21.4
25.2
25.5
32
32
54.3
54.3
70
70
NOTE 1: C suffix denotes standard back-to-back bidirectional versions. Test both polarities. JEDEC device types 1N6382 thru 1N6389 are registered as back to back bidirectional versions and
do not require a C suffix. 1N6373 thru 1N6381 are registered as unidirectional devices only (no bidirectional option).
***
Indicates JEDEC registered data.
***
1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*** A transient suppressor is normally selected according to the maximum reverse stand-off voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating
***
voltage level.
{
{
Surge current waveform per Figure 5 and derate per Figure 2 of the General Data — 1500 W at the beginning of this group.
{ {
VBR measured at pulse test current IT at an ambient temperature of 25°C.
# VF applies to unidirectional devices only.
500 Watt Peak Power Data Sheet
4-2
Motorola TVS/Zener Device Data
100
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA= 25
°
C
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
PP , PEAK POWER (kW)
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
10
1
µs
0.1
1
µs
10
µs
100
µs
1 ms
10 ms
tP, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
10,000
MEASURED @
ZERO BIAS
10,000
1N6267A/1.5KE6.8A
through
1N6303A/1.5KE200A
MEASURED @
ZERO BIAS
C, CAPACITANCE (pF)
1000
MEASURED @
STAND-OFF
VOLTAGE (VR)
C, CAPACITANCE (pF)
1000
MEASURED @
STAND-OFF
VOLTAGE (VR)
100
100
10
1
10
100
1000
BV, BREAKDOWN VOLTAGE (VOLTS)
10
1
10
100
1000
BV, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PD , STEADY STATE POWER DISSIPATION (WATTS)
3/8″
5
4
3
2
1
0
0
25
50
75
100 125 150 175
TL, LEAD TEMPERATURE (°C)
200
0
0
3/8″
VALUE (%)
100
tr
PEAK VALUE — IRSM
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF IRSM.
tr
≤
10
µs
IRSM
2
HALF VALUE –
50
tP
1
2
t, TIME (ms)
3
4
Figure 4. Steady State Power Derating
Devices listed in bold, italic are Motorola preferred devices.
Figure 5. Pulse Waveform
Motorola TVS/Zener Device Data
500 Watt Peak Power Data Sheet
4-3
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1000
500
I Z, ZENER CURRENT (AMPS)
200
100
50
20
10
5
2
1
0.3
0.5 0.7 1
2
3
5 7 10
20 30
∆V
Z, INSTANTANEOUS INCREASE IN VZ ABOVE VZ(NOM) (VOLTS)
1
0.7
0.5
0.3
DERATING FACTOR
0.2
0.1
0.07
0.05
0.03
0.02
10
µs
0.01
0.1
0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
TL = 25°C
tP = 10
µs
VZ(NOM) = 6.8 to 13 V
20 V
43 V
24 V
1000
500
I Z, ZENER CURRENT (AMPS)
200
100
50
20
10
5
2
1
TL = 25°C
tP = 10
µs
1N6267A/1.5KE6.8A
through
1N6303A/1.5KE200A
VZ(NOM) = 6.8 to 13 V
20 V
24 V
43 V
75 V
180 V
120 V
0.3
0.5 0.7 1
2
3
5 7 10
20 30
∆V
Z, INSTANTANEOUS INCREASE IN VZ ABOVE VZ(NOM) (VOLTS)
Figure 6. Dynamic Impedance
PULSE WIDTH
10 ms
1 ms
100
µs
50
100
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be pro-
tected. In this situation, there is a time delay associated with
the capacitance of the device and an overshoot condition as-
sociated with the inductance of the device and the inductance
of the connection method. The capacitance effect is of minor
importance in the parallel protection scheme because it only
produces a time delay in the transition from the operating volt-
age to the clamp voltage as shown in Figure A.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces
an overshoot in the voltage across the equipment or
component being protected as shown in Figure B. Minimizing
this overshoot is very important in the application, since the
main purpose for adding a transient suppressor is to clamp
voltage spikes. These devices have excellent response time,
typically in the picosecond range and negligible inductance.
However, external inductive effects could produce unaccept-
able overshoot. Proper circuit layout, minimum lead lengths
500 Watt Peak Power Data Sheet
4-4
and placing the suppressor device as close as possible to the
equipment or components to be protected will minimize this
overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit op-
eration.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be in
error as the 10 ms pulse has a higher derating factor than the
10
µs
pulse. However, when the derating factor for a given
pulse of Figure 7 is multiplied by the peak power value of
Figure 1 for the same pulse, the results follow the expected
trend.
Motorola TVS/Zener Device Data
TYPICAL PROTECTION CIRCUIT
Zin
Vin
LOAD
VL
V
Vin (TRANSIENT)
VL
V
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
Vin (TRANSIENT)
VL
Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 8.
Figure 9.
UL RECOGNITION*
The entire series has
Underwriters Laboratory Recognition
for the classification of protectors (QVGV2) under the UL
standard for safety 497B and File #116110. Many competitors
only have one or two devices recognized or have recognition
in a non-protective category. Some competitors have no
recognition at all. With the UL497B recognition, our parts
successfully passed several tests including Strike Voltage
Breakdown test, Endurance Conditioning, Temperature test,
Dielectric Voltage-Withstand test, Discharge test and several
more.
Whereas, some competitors have only passed a flammabil-
ity test for the package material, we have been recognized for
much more to be included in their Protector category.
*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA
Devices listed in bold, italic are Motorola preferred devices.
当今的计算机外部设备，都在追求高速度和高通用性。为了满足用户的需求，以Intel为首的七家公司于1994年推出了USB（Universal Serial Bus，通用串行总线）总线协议，专用于低、中速的计算机外设。目前，USB端口已成为微机主板的标准端口；而在不久的将来，所有的微机外设，包括键盘、鼠标、显示器、打印机、数字相机、扫描仪和游戏柄等等，都将通过USB与主机相连。
...[详细]
最近，恩智浦的管理层又有了不少变化，效忠公司26年之久的首席技术官René Penning de Vries下台了。 René Penning de Vries 几个月以前，恩智浦的首席财政官Karl-Henrik Sundström刚刚宣布了辞职的消息。恩智浦的官方发言人表示，二者的辞职都是个人原因。“因个人原因，而且他们也没有做出什么财政上的业绩。”发言人表示。 恩智浦作为一...[详细]
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
