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5962-9318706H5X

产品描述Cache SRAM Module, 128KX32, 45ns, CMOS, CPGA66, 1.085 X 1.085 INCH, 0.160 INCH HEIGHT, HERMETIC SEALED, PGA-66
产品类别存储    存储   
文件大小414KB,共10页
制造商Cobham Semiconductor Solutions
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5962-9318706H5X概述

Cache SRAM Module, 128KX32, 45ns, CMOS, CPGA66, 1.085 X 1.085 INCH, 0.160 INCH HEIGHT, HERMETIC SEALED, PGA-66

5962-9318706H5X规格参数

参数名称属性值
厂商名称Cobham Semiconductor Solutions
零件包装代码PGA
包装说明PGA,
针数66
Reach Compliance Codeunknown
ECCN代码3A001.A.2.C
Is SamacsysN
最长访问时间45 ns
其他特性CONFIGURABLE AS 512K X 8
备用内存宽度16
JESD-30 代码S-CPGA-P66
内存密度4194304 bit
内存集成电路类型CACHE SRAM MODULE
内存宽度32
功能数量1
端子数量66
字数131072 words
字数代码128000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织128KX32
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码PGA
封装形状SQUARE
封装形式GRID ARRAY
并行/串行PARALLEL
认证状态Not Qualified
筛选级别MIL-STD-883
座面最大高度4.699 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子形式PIN/PEG
端子节距2.54 mm
端子位置PERPENDICULAR
Base Number Matches1

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ACT-S128K32 High Speed
4 Megabit SRAM Multichip Module
Features
4 Low Power CMOS 128K x 8 SRAMs in one MCM
Overall configuration as 128K x 32
Input and Output TTL Compatible
17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order
Full Military (-55°C to +125°C) Temperature Range
+5V Power Supply
Choice of 7 Hermetically sealed Co-fired Packages:
68–Lead, Low Profile CQFP (F1), 1.56"SQ x .140"max
68–Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max thickness
available, contact factory for details)
(Drops into the 68 Lead JEDEC .99"SQ
CQFJ footprint)
68–Lead, Single-Cavity CQFP (F18), .94"SQ x .140"max
(Drops into the 68
Lead JEDEC .99"SQ CQFJ footprint)
66–Lead, PGA-Type (P2,P6 with/without shoulders), 1.185"SQ x .245"max
66–Lead, PGA-Type (P7,P3 with/without shoulders), 1.08"SQ x .160"max
Internal Decoupling Capacitors
DESC SMD# 5962–93187 Released (P2,P3,P6,P7)
CIRCUIT TECHNOLOGY
www.aeroflex.com
General Description
The ACT–S128K32 is a High
Speed 4 megabit CMOS SRAM
Multichip
Module
(MCM)
designed for full temperature
range, military, space, or high
reliability mass memory and
fast cache applications.
The MCM can be organized
as a 128K x 32 bits, 256K x 16
bits or 512k x 8 bits device and
is input and output TTL
compatible. Writing is executed
when the write enable (WE)
and chip enable (CE) inputs are
low. Reading is accomplished
when WE is high and CE and
output enable (OE) are both
low. Access time grades of
17ns, 20ns, 25ns, 35ns, 45ns
and 55ns maximum are
standard.
The +5 Volt power supply
version is standard and the
+3.3 Volt low power model is
available (See ACT-S128K32V
data sheet).
The products are designed for
operation over the temperature
range of -55°C to +125°C and
screened under the full military
environment. DESC Standard
Military Drawing (SMD) part
numbers are released and
available.
The
ACT-S128K32
is
manufactured in Aeroflex’s
80,000ft
2
MIL-PRF-38534
certified facility in Plainview,
N.Y.
5962–95595 Released (F1,F2,F18)
Block Diagram – PGA Type Package(P2,P7) & CQFP(F2,F18)
Pin Description
WE
1
CE
1
WE
2
CE
2
WE
3
CE
3
WE
4
CE
4
I/O
0-31
A
0
– A
16
OE
128Kx8
128Kx8
128Kx8
128Kx8
A
0–16
WE
1–4
CE
1–4
OE
V
cc
8
I/O
0-7
8
I/O
8-15
8
I/O
16-23
8
I/O
24-31
GND
NC
Data I/O
Address Inputs
Write Enables
Chip Enables
Output Enable
Power Supply
Ground
Not Connected
Block Diagram – CQFP(F1)
Pin Description
CE
1
WE
OE
A
0
– A
16
128Kx8
128Kx8
128Kx8
128Kx8
CE
2
CE
3
CE
4
I/O
0-31
A
0–16
WE
CE
1–4
OE
V
cc
8
I/O
0-7
8
I/O
8-15
8
I/O
16-23
8
I/O
24-31
GND
NC
Data I/O
Address Inputs
Write Enable
Chip Enables
Output Enable
Power Supply
Ground
Not Connected
eroflex Circuit Technology - Advanced Multichip Modules © SCD1659 REV E 5/21/01

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