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WCTQ13111501D

产品描述RES NET,THIN FILM,11.5K OHMS,200WV,.5% +/-TOL,-100,100PPM TC,0303 CASE
产品类别无源元件    电阻器   
文件大小98KB,共3页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准  
下载文档 详细参数 全文预览

WCTQ13111501D概述

RES NET,THIN FILM,11.5K OHMS,200WV,.5% +/-TOL,-100,100PPM TC,0303 CASE

WCTQ13111501D规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
Objectid1178115288
包装说明SMT, 0303
Reach Compliance Codeunknown
ECCN代码EAR99
构造Chip
制造商序列号CTQ
网络类型Center Tap
端子数量6
最高工作温度125 °C
最低工作温度-55 °C
封装高度0.254 mm
封装长度0.762 mm
封装形式SMT
封装宽度0.762 mm
包装方法Tray
额定功率耗散 (P)0.06 W
参考标准MIL-STD-883
电阻11500 Ω
电阻器类型ARRAY/NETWORK RESISTOR
系列CTQ
尺寸代码0303
温度系数100 ppm/°C
容差0.5%
工作电压200 V

文档预览

下载PDF文档
CTQ
Vishay Electro-Films
Thin Film Center-Tapped Resistors
CHIP
RESISTORS
FEATURES
Product may
not be to scale
Wire bondable
Center tap feature
Chip size: 0.030 inches square
Resistance range total: 10
Ω
to 1 MΩ
Resistor material: Tantalum nitride, self-passivating
Moisture resistant
Quartz substrate
Low shunt capacitance < 0.1 pF
I
V
The CTQ series resistor chips offer a wide resistance range with
lower shunt capacitance than can be offered with the silicon
based resistors but only at a lower power level.
The CTQ offers the designer flexibility in use as either a
single value resistor or as two resistor with a center tap
feature. The CTQs six bonding pads allows the user
increased layout flexibility.
The CTQs are manufactured using Vishay Electro-Films
(EFI) sophisticated thin film equipment and manufacturing
technology. The CTQs are 100 % electrically tested and
visually inspected to MIL-STD-883.
R
A
R
B
V
I
V
APPLICATIONS
The CTQ center-tapped resistor chips are used mainly in feedback circuits of amplifiers where ratio matching, low shunt
capacitance and tracking between two resistors is critical.
For low values, the resistance of the six bonding pad configuration can vary, depending on the method of measurement used.
Vishay EFI measures low-value resistors by the four-wire kelvin technique.
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES
Tightest Standard Tolerance Available
0.5 %
0.1 %
PROCESS CODE
CLASS H*
CLASS K*
132
130
131
102
100
101
*MIL-PRF-38534 inspection criteria
± 25 ppm/°C
± 50 ppm/°C
± 100 ppm/°C
10
Ω
25
Ω
100
Ω
360 kΩ 620 kΩ 1 MΩ
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
TCR Tracking Between Halves (R
A
,
R
B
)
Center Tap Ratio,
R
A
/R
B
: Tolerance
Noise, MIL-STD-202, Method 308, 100
Ω
- 250 kΩ
< 100
Ω
or > 251 kΩ
Moisture Resistance, MIL-STD-202, Method 106
Stability, 1000 h, + 125 °C, 30 mW
Operating Temperature Range
Thermal Shock, MIL-STD-202, Method 107, Test Condition F
High Temperature Exposure, + 150 °C, 100 h
Dielectric Voltage Breakdown
Insulation Resistance
Operating Voltage
DC Power Rating at + 70 °C (Derated to Zero at + 175 °C)
5 x Rated Power Short-Time Overload, + 25 °C, 5 s
*5 ppm/°C for
R
< 100. 20 ppm/°C for
R
< 20
www.vishay.com
82
For technical questions, contact: efi@vishay.com
Document Number: 61030
Revision: 13-Mar-08
± 2 ppm/°C*
1 ± 1 % standard
- 35 dB typ.
- 20 db typ.
± 0.5 % max.
ΔR/R
± 0.25 % max.
ΔR/R
- 55 °C to + 125 °C
± 0.1 % max.
ΔR/R
± 0.2 % max.
ΔR/R
400 V
10
12
min.
200 V
60 mW
± 0.25 % max.
ΔR/R
%
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