MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Temperature-Compensated
Zener Reference Diodes
Temperature-compensated zener reference diodes utilizing a single chip oxide passi-
vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed
structure.
Mechanical Characteristics:
CASE:
Hermetically sealed, all-glass
DIMENSIONS:
See outline drawing.
FINISH:
All external surfaces are corrosion resistant and leads are readily solderable.
POLARITY:
Cathode indicated by polarity band.
WEIGHT:
0.2 Gram (approx.)
MOUNTING POSITION:
Any
Maximum Ratings
Junction Temperature: – 55 to +175°C
Storage Temperature: – 65 to +175°C
DC Power Dissipation: 400 mW @ TA = 50°C
WAFER FAB LOCATION:
Phoenix, Arizona
ASSEMBLY/TEST LOCATION:
Phoenix, Arizona
1N821,A 1N823,A
1N825,A 1N827,A
1N829,A
TEMPERATURE-
COMPENSATED
SILICON ZENER
REFERENCE DIODES
6.2 V, 400 mW
CASE 299
DO-204AH
GLASS
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted. VZ = 6.2 V
±
5%* @ IZT = 7.5 mA) (Note 5)
Maximum
Voltage Change
∆V
Z (Volts)
(Note 1)
Ambient
Test Temperature
°C
±1°C
Temperature
Coefficient
For Reference Only
%/°C
(Note 1)
Maximum
Dynamic Impedance
ZZT Ohms
(Note 2)
JEDEC
Type No.
1N821
1N823
1N825
1N827
1N829
0.096
0.048
0.019
0.009
0.005
– 55, 0, +25, +75, +100
0.01
0.005
0.002
0.001
0.0005
15
1N821A
1N823A
1N825A
1N827A
1N829A
0.096
0.048
0.019
0.009
0.005
0.01
0.005
0.002
0.001
0.0005
10
*Tighter-tolerance units available on special request.
Motorola TVS/Zener Device Data
6.2 Volt OTC 400 mW DO-35 Data Sheet
8-1
1N821,A 1N823,A 1N825,A 1N827,A 1N829,A
MAXIMUM VOLTAGE CHANGE versus AMBIENT TEMPERATURE
(with IZT = 7.5 mA
±0.01
mA) (See Note 3)
1N821 through 1N829
25
1N821,A
20
15
1N823,A
10
25
1N825,A
1N827,A
0
1N829,A
1N827,A
–25
–50
∆V
Z = –31 mV
1N825,A
–10
1N823,A
–15
–20
1N821,A
–10
–55
0
0
50
100
1N821,A
–25
–55
TA, AMBIENT TEMPERATURE (°C)
1N825,A
1N823,A
0
50
100
5
0
–5
1N829,A
1N827,A
1N827,A
1N829,A
1N823,A
1N825,A
100
IZT = 7.5 mA
75
∆
VZ , MAXIMUM VOLTAGE CHANGE (mV)
(Referenced to –55°C)
50
∆V
Z = +31 mV
1N821,A
–75
Figure 1a
Figure 1b
ZENER CURRENT versus MAXIMUM VOLTAGE CHANGE
(At Specified Temperatures)
(See Note 4)
MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES.
10
9
I Z , ZENER CURRENT (mA)
–55°C
10
+100°C
9
+25°C
I Z , ZENER CURRENT (mA)
8
7.5
7
6
+100°C
5
+25°C
–55°C
IZT
+100°C
8
7.5
7
6
+100°C
5
4
–75
IZT
+25°C
–55°C
+25°C
–55°C
–50
–25
0
25
50
4
–75
–50
–25
0
25
50
∆V
Z, MAXIMUM VOLTAGE CHANGE (mV)
(Referenced to IZT = 7.5 mA)
∆V
Z, MAXIMUM VOLTAGE CHANGE (mV)
(Referenced to IZT = 7.5 mA)
Figure 2. 1N821 Series
Figure 3. 1N821A Series
Devices listed in bold, italic are Motorola preferred devices.
6.2 Volt OTC 400 mW DO-35 Data Sheet
8-2
Motorola TVS/Zener Device Data
1N821,A 1N823,A 1N825,A 1N827,A 1N829,A
MAXIMUM ZENER IMPEDANCE versus ZENER CURRENT
(See Note 2)
MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES.
ZZ , MAXIMUM ZENER IMPEDANCE (OHMS)
1000
800
600
400
200
100
80
60
40
20
10
8
6
4
2
1
1
2
4
6
8 10
20
40
60 80 100
IZ, ZENER CURRENT (mA)
100°C
25°C
–55°C
ZZ , MAXIMUM ZENER IMPEDANCE (OHMS)
1000
800
600
400
200
100
80
60
40
20
10
8
6
4
2
1
1
2
4
6
8 10
20
40
60 80 100
IZ, ZENER CURRENT (mA)
–55°C
25°C
100°C
Figure 4. 1N821 Series
Figure 5. 1N821A Series
NOTE 1. VOLTAGE VARIATION (∆VZ) AND TEMPERATURE COEFFICIENT
All reference diodes are characterized by the “box method.” This guarantees a maximum volt-
age variation (∆VZ) over the specified temperature range, at the specified test current (IZT),
verified by tests at indicated temperature points within the range. VZ is measured and re-
corded at each temperature specified. The
∆V
Z between the highest and lowest values must
not exceed the maximum
∆V
Z given. This method of indicating voltage stability is now used
for JEDEC registration as well as for military qualification. The former method of indicating
voltage stability — by means of temperature coefficient accurately reflects the voltage devi-
ation at the temperature extremes, but is not necessarily accurate within the temperature
range because reference diodes have a nonlinear temperature relationship. The temperature
coefficient, therefore, is given only as a reference.
NOTE 3.
These graphs can be used to determine the maximum voltage change of any device in the
series over any specific temperature range. For example, a temperature change from 0 to
+50°C will cause a voltage change no greater than +31 mV or – 31 mV for 1N821 or 1N821A,
as illustrated by the dashed lines in Figure 1. The boundaries given are maximum values. For
greater resolution, an expanded view of the center area in Figure 1a is shown in Figure 1b.
NOTE 4.
The maximum voltage change,
∆V
Z, Figures 2 and 3 is due entirely to the impedance of the
device. If both temperature and IZT are varied, then the total voltage change may be obtained
by graphically adding
∆V
Z in Figure 2 or 3 to the
∆V
Z in Figure 1 for the device under consider-
ation. If the device is to be operated at some stable current other than the specified test cur-
rent, a new set of characteristics may be plotted by superimposing the data in Figure 2 or 3
on Figure 1. For a more detailed explanation see application note in later section.
NOTE 5.
Zener voltage limits at 25°C measured with the test current (IZT) applied with the device junc-
tion in thermal equilibrium at an ambient temperature of 25°C.
NOTE 2.
The dynamic zener impedance, ZZT, is derived from the 60 Hz ac voltage drop which results
when an ac current with an rms value equal to 10% of the dc zener current, IZT, is superim-
posed on IZT. Curves showing the variation of zener impedance with zener current for each
series are given in Figures 4 and 5.
Motorola TVS/Zener Device Data
6.2 Volt OTC 400 mW DO-35 Data Sheet
8-3
NXP MCU
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