电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N5829R

产品描述Rectifier, Schottky; Max Peak Repetitive Reverse Voltage: 25; Max TMS Bridge Input Voltage: 20; Max DC Reverse Voltage: 3000; Package: DO-4R
产品类别分立半导体    二极管   
文件大小548KB,共3页
制造商Digitron
官网地址http://www.digitroncorp.com
下载文档 详细参数 选型对比 全文预览

1N5829R在线购买

供应商 器件名称 价格 最低购买 库存  
1N5829R - - 点击查看 点击购买

1N5829R概述

Rectifier, Schottky; Max Peak Repetitive Reverse Voltage: 25; Max TMS Bridge Input Voltage: 20; Max DC Reverse Voltage: 3000; Package: DO-4R

1N5829R规格参数

参数名称属性值
厂商名称Digitron
Reach Compliance Codeunknown
Is SamacsysN
应用GENERAL PURPOSE
外壳连接ANODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.72 V
JEDEC-95代码DO-4
JESD-30 代码O-MUPM-D1
最大非重复峰值正向电流800 A
元件数量1
相数1
端子数量1
最高工作温度125 °C
最低工作温度-65 °C
最大输出电流25 A
封装主体材料METAL
封装形状ROUND
封装形式POST/STUD MOUNT
最大重复峰值反向电压20 V
最大反向电流3000 µA
表面贴装NO
技术SCHOTTKY
端子形式SOLDER LUG
端子位置UPPER
Base Number Matches1

文档预览

下载PDF文档
High-reliability discrete products
and engineering services since 1977
FEATURES
1N5829-1N5831
25A SCHOTTKY BARRIER RECTIFIERS
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Symbol
T
STG
T
J
R
θJC
R
θJS
Parameter
Storage temperature range
Operating junction temperature range
Maximum thermal resistance
Typical thermal resistance
Mounting torque
Weight
Value
-65° to +125°C
-65° to +125°C
1.75°C/W junction to case
0.5°C/W junction to sink
15 inch pounds maximum
6 grams (.02 ounces) typical
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Symbol
V
RWM
V
RRM
I
F(AV)
I
FSM
V
FM
V
FM
V
FM
I
RM
I
RM
C
J
Characteristic
Working peak reverse voltage
Repetitive peak reverse voltage
Average forward current
Maximum surge current
Maximum peak forward voltage
Maximum peak forward voltage
Maximum peak forward voltage
Maximum peak reverse current
Maximum peak reverse current
Typical junction capacitance
1N5829
20V
20V
25A
800A
.360V
.440V
.720V
150mA
3.0mA
1650pF
1N5830
30V
30V
25A
800A
.370V
.460V
.770V
150mA
3.0mA
1650pF
1N5831
40V
40V
25A
800A
.380V
.480V
.820V
150mA
3.0mA
1650pF
T
C
= 97°C, square wave, R
θJC
= 1.75°C/W
8.3ms, half sine, T
J
= 125°C
I
FM
= 10A: T
J
= 25°C*
I
FM
= 25A: T
J
= 25°C*
I
FM
= 78.5A: T
J
= 25°C*
V
RRM
, T
J
= 100°C
V
RRM
, T
J
= 25°C
T
J
= 25°C, V
R
= 5V, f = 1MHz
Test Condition
Rev. 20150317

1N5829R相似产品对比

1N5829R GRM0112C1E9R9DE01 1N5831R LM3S6938-IQR25-A2
描述 Rectifier, Schottky; Max Peak Repetitive Reverse Voltage: 25; Max TMS Bridge Input Voltage: 20; Max DC Reverse Voltage: 3000; Package: DO-4R Chip Multilayer Ceramic Capacitors for General Purpose Rectifier, Schottky; Max Peak Repetitive Reverse Voltage: 25; Max TMS Bridge Input Voltage: 40; Max DC Reverse Voltage: 3000; Package: DO-4R Stellaris LM3S6938 Microcontroller

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2815  2848  325  2836  424  3  8  50  51  45 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved