1N5711-1: 产品描述Rectifier Diode, Schottky, 1 Element, 0.033A, Silicon, DO-35,; 产品类别分立半导体二极管; 文件大小26KB，共2页; 制造商Compensated Devices Inc

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1N5711-1概述

Rectifier Diode, Schottky, 1 Element, 0.033A, Silicon, DO-35,

1N5711-1规格参数

参数名称	属性值
厂商名称	Compensated Devices Inc
Reach Compliance Code	unknown
Is Samacsys	N
其他特性	METALLURGICALLY BONDED
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-35
JESD-30 代码	O-LALF-W2
JESD-609代码	e0
元件数量	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-65 °C
最大输出电流	0.033 A
封装主体材料	GLASS
封装形状	ROUND
封装形式	LONG FORM
认证状态	Not Qualified
参考标准	MIL-19500/444
表面贴装	NO
技术	SCHOTTKY
端子面层	TIN LEAD
端子形式	WIRE
端子位置	AXIAL
Base Number Matches	1

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• 1N5711-1 AVAILABLE IN

JAN, JANTX, JANTXV AND JANS

•

PER MIL-PRF-19500/444

1N5712-1 AVAILABLE IN

JAN, JANTX, JANTXV AND JANS

PER MIL-PRF-19500/445

SCHOTTKY BARRIER DIODES

HERMETICALLY SEALED

METALLURGICALLY BONDED

1N5711

1N5711-1

1N5712-1

1N6857-1

1N6858-1

DSB2810

DSB5712

MAXIMUM RATINGS

Operating Temperature: -65°C to +150°C

Storage Temperature:

-65°C to +150°C

Operating Current: 5711 types

2810,5712 & 6858 types

6857 TYPE

Derating:

all types:

:33mA dc@ TL = +130°C, L = 3/8”

:75mA dc@ TL = +110°C, L = 3/8”

:75mA dc@ TL = +70°C, L = 3/8”

Derate to 0 (zero)mA@+150°C

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise specified.

CDI

TYPE

NUMBER

MINIMUM

BREAKDOWN

VOLTAGE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM REVERSE

LEAKAGE CURRENT

MAXIMUM

CAPACITANCE @

= 0 VOLTS

f = 1.0 MH

@ 10

VOLTS

DSB2810

1N5711,-1

DSB5712

1N5712-1

1N6857-1

1N6858-1

V @ 1 mA

VOLTS

0.41

0.35

0.36

V @I

MILLIAMPS

1.0@35

1.0@15

1.0@35

0.75@35

0.65@15

I @V

VOLTS

PICO FARADS

2.0

4.5

ESDS

CLASS

100

200

150

200

FIGURE 1

DESIGN DATA

CASE:

Hermetically sealed glass case

per MIL-PRF-19500/444 and /445

DO-35 Outline

LEAD MATERIAL:

Copper clad steel.

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE: (R

OJEC): 250

˚C/W maximum at L = .375 inch

THERMAL IMPEDANCE: (Z

OJX): 40

˚C/W maximum

POLARITY:

Cathode end is banded.

NOTE:

Effective Minority Carrier Lifetime (

) is 100 Pico Seconds

NOTICE:

Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway.

Contact the factory for qualification completion dates. These two part numbers are

being introduced by CDI as “drop-in” replacements for the 5711 and 5712. They

provide a more robust mechanical design and a higher ESDS class with the only

trade-off being an increase in capacitance.

MOUNTING POSITION:

Any.

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

FAX (781) 665-7379

WEBSITE: http://www.cdi-diodes.com

E-mail: mail@cdi-diodes.com

1N5711-1相似产品对比

	1N5711-1	1N6857-1	1N6858-1
描述	Rectifier Diode, Schottky, 1 Element, 0.033A, Silicon, DO-35,	Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, DO-35,	Rectifier Diode, Schottky, 1 Element, 0.075A, Silicon, DO-35,
厂商名称	Compensated Devices Inc	Compensated Devices Inc	Compensated Devices Inc
Reach Compliance Code	unknown	unknown	unknown
Is Samacsys	N	N	N
其他特性	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED
外壳连接	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95代码	DO-35	DO-35	DO-35
JESD-30 代码	O-LALF-W2	O-LALF-W2	O-LALF-W2
JESD-609代码	e0	e0	e0
元件数量	1	1	1
端子数量	2	2	2
最大输出电流	0.033 A	0.075 A	0.075 A
封装主体材料	GLASS	GLASS	GLASS
封装形状	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO
技术	SCHOTTKY	SCHOTTKY	SCHOTTKY
端子面层	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1

1N5711-1

1N5711-1在线购买

1N5711-1概述

1N5711-1规格参数

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