4
_j : **
’
r
‘!
\
. .
1
I
“,
I
,1
i
::
“1
.,&
i”
,
:.,i
%,~,,>V<,,L
> a>“_
Xl
I *k .. ,.,*t *.; :, ;: a; y <.~ ~,*‘:, T <’ ‘;i‘<“: a* I Ri<;
E
$
‘-\
‘,,’
._“_ I’
Characteristic-All
Reverse
Reverse
Bre*down
Voltage
Types
Test Conditions
IR = 10 pAdc
VR = 55 Vdc, TA
VR = 55 Vdc, TA
=
25°C
= 150°C
Symbol
Bn
IR
Min
60
—
—
Typ
70
—
—
5
Max
—
Unit
Vdc
pAdc
w’
Voltage
Current
Le~age
0.02
20
—
Series
hductmce
f = 250 MHz, L x 1/16~)
f = 1 MHz, L % 1/16’)
Temperature
VR=4VdC,
f=l
MHz
LS
—
~*2;.+
Case Capacitance
Diode Capacitance
Coefficient
cc
—
0.25
—
TCC
—
200
~w$:b,p”:
~
‘),;,l+..!,
s.
~!:
~J\~ .?:,{
f:,&:
,,*,. ,:i>
‘$.,~..
PP4°c
,:~::~
,,:4. .+y,<;’
v,... ..(,
<,
.:
Cr, Diode Capacitance
VR=4Vdc,
f=l
MHz
pF
Q, Figure of Merit
VR = 4 Vdc,
f = 50 MHz
VR = 4 Vd;
f = 1 w~e..
.\, .yJ/>,&,
‘“~-~.>...
:,. ‘.!Ji>, ~.
. :.,,,
Min
2.7
2.7
2.8
2.8
10.8
11.4
13.5
14.3
16.2
17.1
19.8
20.9
12.0
12.0
15.0
15.0
18.0
18.0
22.0
22.0
13.2
12.6
16.5
15.7
19.8
18.9
24.2
23.1
300
..
‘~;~$ 0.38
0.38
300 .&$;,,
25Q:,.,,,. ‘h<.:
0.38
.zf~
‘$
0.38
.’<1.,,
:.*,,\N~
..,,,.:,,:,
\~
0.38
$~+\
..,>..
,$
0.38
,,)$ 200
0.43
.~~.
.
200
0.43
.,,,:>l.,;$,
0.41
0.41
0.41
0.41
0.41
0.41
0.45
0.45
I
I
Device
1N5139
1N5139A
1N5140
1N5140A
1N5141
1N5141A
1N5142
1N5142A
1N5143
1N5143A
1N5144
1N5144A
1N5145
1N5145A
1N5146
1N5146A
1N5147
1N5147A
1N5148
1N5148A
Typ
2.9
2.9
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.0
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
2.8
2.8
2.8
2.8
2.8
2.8
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
-
*
1.
1s,SERIES lNDUCTA~’~
LS is measured on’k,”~tied
impedance bri ~.$~,oonton
L = lead Ienst $ i;. “’$
.1+
. ~,,:’’~;:;,,}
‘“
package at
250
MHz using an
Radio Model 250A RX
Meter).
tance
bridge at
the specified frequency
the following equations:
2rfc
Q=T
and substituting
in
~:..
(Boonton
Electronics
Model 33AS8).
2. Cc, CA$Fi\~&fTANCE
on an open package at 1 MHz using a ca-
cc
i~,~~s$ted
pa@#t’~~~&’’bridge
.RqtiJ$5Y&nt).
:;~?~.....:*J
...,\,i>,,..,
,
(Boonton
Electronics
Model
75A or
6. a, DIODE CAPACITANCE REVERSE VOLTAGE SLOPE
The diode capacitance, CT (as measured at VR = 4 Vdc,
f = 1 MHz) is compared to CT (as measured at V, = 60 Vdc,
f = 1 MHz) by the following equation which defines a.
log
C,(4) – log CT(60)
a=
10~ 60 – 10~ 4
Note that a C, versus
vR-law is
a;sumed as shown in the
following equation where CC is included.
3. &;tiODE
CAPACITANCE
(C, = CC + CJ). C, is measured at 1 MHz using a capaci-
tance
bridge
(Boon ton Electronics
Model
75A or
equivalent).
4. TR, TUNING RATIO
TR is the ratio of C, measured
ured at 60 Vdc.
at 4 Vdc divided by
CT
meas-
7. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT
TCC is guaranteed by comparing CT at V, = 4 Vdc, f =
1 MHz, T. = –65° C with CT at
VR =
4 Vdc, f = 1 MHz,
T. = +85°C
in the following equation which defines TCC:
106
C,(+85°C)
– C,(–65” C) 1.
TCC =
C,(25° C)
85 + 65
5. Q, FIGURE OF MERIT
Q is calculated
by taking the G and C readings of an admit-
MOTOROLA
Semiconductor
Products
Inc.
@
q
00000000
q
00000000
FIGURE 1 – DIODE CAPACITANCE versus REVERSE VOLTAGE
100
70
50
FIGURE 2 – FIGURE OF MERITversus REVERSE VOLTAGE
10000
7000
5000
3000
~
2
k
~ 1000
~ 700
m
u- 500
300
1
1
1
[
1
I
1
I
I
I
[1
I
TA =
25°C
f =50
MHz
I
I
1
,
[
1
1
1
1.0
3.0
5.0
7.0 10
30
5060
100
VR,
REVERSE
VOLTAGE
(VOLTS)
FIGURE 3– NORMALIZED DIODE CAPACITANCE
versus JUNCTION TEMPERATURE
1,020
*WE 4- NORMALIZED FIGURE OF MERIT
,,.:,y:w’:~isus JUNCTION TEMPERATURE
140
1.010
?= 50
MHz
0.960
—
70
–65 –50
I
–25
I
o
+25
+50
1
+75 +85
T,,
JUNCTION
TEMPERATURE
(°C)
FIGURE 6 – FIGURE OF MERITversus FREQUENCY
40
2000
32
1000
700
500
300
a
o
– 10
100
–20
–30
–40
-50
–60
10
30
f,
FREQUENCY
(MHz)
50
70
100
R
VOLTAGE
(VOLTS)
VR,
EVERSE
)00000000
q
00000000
q
@
M070ROLA
Semiconductor
Products
Inc.
EPICAP
VOLTAGE
VARIABLE
CAPACITANCE
DIODE
DEVICE
CONSIDERATIONS
FIGURE 7
Cc)l
)1
A. EPICAP NETWORK PRESENTATION
The equivalent
circuit in Figure 7 shows the voltage capaci-
tance and parasitic
elements
of an EPICAP diode. For design
purposes at all but very high and very low frequencies,
Ls, RJ,
and CC can be neglected.
The simplified
equivalent
circuit of
Figure 8 represents
the diode under these conditions.
d
CJ
71
{:.?
R,
Definitions:
CJ — Voltage Variable
Junction Capacitance
RS — Series
Resistance
(semiconductor
bulk,
contact,
and lead resistance)
Cc — Case Capacitance
LS — Series Inductance
RJ — Voltage
Variable
Junction
Resistance
(negligible
above 100 kHz)
~,1~
,,$,
FIGURE 8
o
CT=
c,
VI
CC+CJ
J*
~
,:.\
:xd>y,b
..?,.:.K:.
“’*
B. EPICAP CAPACITANCE VS REVERSE
BIAS VOLTAGE
The most important
design
characteristic
of an EPICAP
diode is the C, versus VR variation
as shown in equations
1 and
2. Since the designer
is primarily
interested
in the slope of CT
versus VR, the CC, CO, o, and Y characteristics
have been en-
compassed
by the simplified
equation
3. Min/max
limits on
a
(as defined
in Note 6) can be guaranteed
over a specified
V~ range.
C,=
CC+
c“
(1 +
C.=
@=
C, at VR = O
Contact
c,=
$$$:$’”
.. :.,:\:.
‘
(1)
(2)
~ ‘{[,~”,{
‘*,:,..
‘
. ,.“$?.
Potent~*~W*.y
o’~6 vOlt
~>$,;
’’””
V, =
Reverse
CJ
slope,
Bias
~
z
0.5
~=
(3)
C. EPICAP CAPACITANCE VS FREQUENCY
Variations
in EPICAP effective
capacitance,
as a function
of
operating
frequency,
can be derived
from a simplified
equiv-
alent circuit similar to that of Figure 7, but neglecting
RS and
R,. The admittance
expression
for such a circuit
is given in
equation
4. Examination
of equation
4 yields the following
information:
At low frequencies,
C,. = CJ; at very high freque~~~es
. . .,i,
m) C.q - cc.
As frequency
is increased
from 1 MHz, C., incre~&2$@n%~
at
W2 =
1 /
LsCJ: and as WZ is incraa&~%6m
it is maximum
1 /
LsC, toward infinity, C.; increases
from a ve~:~~~~e
ca-
pacitance
(inductance)
toward C., = Cc, a positi%.c~,@~tan
ce.
Very simple calculations
for C., at highe~$~.$~~%mcles
indi-
cate the problems
encountered
when cap%~~-surements
~~~ <LsC,, small
are made above 1 MHz. As u approach esi.w. %.{
variations
in Ls cause extreme
variat~~%~~:,~easured
diode
,..
~~\
capacitance.
%< ~,.iy
.,~t.,
,+:~,+:,:,, ..
..;:..
(f=
sv&$4, .,? “
\~,\.t
,i,;:\2:
; 1-
.Jt’.,.
,,*
*J
;:..
.$/:,
,?i~~
e.),,,
,~\*\. .,!),l.,
.%*,, \.
JJ: -1>,
\
,.~, ‘$\:
..,,
\\$:\,i.;:.:.l,
,!
:>
J,.r
,,
,$\i,y,*?$,\,t,*
;,.
‘,:$.,
~1.?,
,,+$
y =
j.C.q =
Jwc.
+1
T~LsCJ
(4)
0. EPICAP FIGURE OF MERIT (~h@WtiTOFF
FREQUENCY (f..)
Q=%
Rsa~
Q,, =
(5)
The efficiency
of EPIC&
re%se
to an input frequency
is
related to the Figure of
,~~@t
the device as defined in equa-
of
tion 5. For very low f&@~FR@ies,
equation
6 applies
whereas
at high frequencie~~~fi,e~d”
Rj can be neglected,
equation
5
may be rewritten
i~$dw
familiar
form of equation
7.
Another
usefd~<~&&meter
for EPICAP devices
is the cutoff
frequency
(f.:~:~lk
is merely that frequency
at which Q is
equal to l..~~u~~on
8 gives this relationship.
,:,$> *J
....
.
,,..,,..., ~?,.>,:.t
:\.,
! :,
UCJRJ2
RJ +
Rs(l + W2CJ2RJ2)
(6)
(7)
Q,, = ~
wRs C.*
f.. =
Qf..,
=
~
2RRSCBYR
(8)
E. H~~%$lW
,<:\*s\ -::,
,+l.,,,,.:
gf@9~flt
GENERATION USING EPICAPS
p ,~,,) ~
I“
M(BV,
+ o)z
f,.
harmonic
generation
is possible
with
Motorola
EPl@PS
because
of their high cutoff
frequency
and break-
down voltage.
Since EPICAP junction
capacitance
varies
in-
versely
with the square
root of the breakdown
voltage,
harmonic
generator
performance
can be accurately
predicted
from various
idealized
models.
Equation
9 gives the level of
maximum
input power for the EPICAP and equation
10 gives
the relationshi~s
governing
EPICAP circuit efficiency.
In these
equations,
adequate
heat =inking
has been assumed.
Rs
= 0.0285
;M(x3)
N~
E
= 0.0241;
M(x4)
= 0.196
(9)
M(x2)
Eff=l–
N(x2)
= 20.8;
co
= 34.8;
N(x4)
= 62.5
(lo)
N(x3)
M and
N are Constants
@ WOTOROLA
INC.,1972
MOTOROLA
@
,,0”-1,,1,,,. ,, ,,,
OOX 20S12
7-s5
Im,k,A,
,,,,,0
q
c,,,,,
Semiconductor
PHOENIX,
1,000
Products
q
Inc.
INC.
0s,5,,
ARIZONA
85036
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OF MOTOROLA
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