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CY7C1370D-200AXC

产品描述18-Mbit (512 K x 36/1 M x 18) Pipelined SRAM with NoBL Architecture
文件大小863KB,共33页
制造商Cypress(赛普拉斯)
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CY7C1370D-200AXC概述

18-Mbit (512 K x 36/1 M x 18) Pipelined SRAM with NoBL Architecture

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CY7C1370D, CY7C1372D
18-Mbit (512 K × 36/1 M × 18) Pipelined
SRAM with NoBL™ Architecture
18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture
Features
Functional Description
The CY7C1370D and CY7C1372D are 3.3 V, 512 K × 36 and
1 M × 18 synchronous pipelined burst SRAMs with No Bus
Latency™ (NoBL logic, respectively. They are designed to
support unlimited true back-to-back read/write operations with
no wait states. The CY7C1370D and CY7C1372D are equipped
with the advanced (NoBL) logic required to enable consecutive
read/write operations with data being transferred on every clock
cycle. This feature dramatically improves the throughput of data
in systems that require frequent write/read transitions. The
CY7C1370D and CY7C1372D are pin compatible and
functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the clock enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle.
Write operations are controlled by the byte write selects
(BW
a
–BW
d
for CY7C1370D and BW
a
–BW
b
for CY7C1372D)
and a write enable (WE) input. All writes are conducted with
on-chip synchronous self-timed write circuitry.
Three synchronous chip enables (CE
1
, CE
2
, CE
3
) and an
asynchronous output enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tristated during
the data portion of a write sequence.
Pin-compatible and functionally equivalent to ZBT™
Supports 250-MHz bus operations with zero wait states
Available speed grades are 250, 200, and 167 MHz
Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
Fully registered (inputs and outputs) for pipelined operation
Byte write capability
3.3 V core power supply (V
DD
)
3.3 V/2.5 V I/O power supply (V
DDQ
)
Fast clock-to-output times
2.6 ns (for 250 MHz device)
Clock enable (CEN) pin to suspend operation
Synchronous self-timed writes
Available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free
and non Pb-free 119-ball BGA and 165-ball FBGA package
IEEE 1149.1 JTAG-compatible boundary scan
Burst capability—linear or interleaved burst order
“ZZ” sleep mode option and stop clock option
Logic Block Diagram - CY7C1370D (512 K × 36)
A0, A1, A
MODE
CLK
CEN
ADDRESS
REGISTER 0
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
ADV/LD
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
C
ADV/LD
BW
a
BW
b
BW
c
BW
d
WE
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
E
DQ s
DQ P
a
DQ P
b
DQ P
c
DQ P
d
E
INPUT
REGISTER 1
E
INPUT
REGISTER 0
E
OE
CE1
CE2
CE3
ZZ
READ LOGIC
SLEEP
CONTROL
Cypress Semiconductor Corporation
Document Number: 38-05555 Rev. *L
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised July 8, 2011
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