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CY7C1355C

产品描述9-Mbit (256 K x 36 / 512 K x 18) Flow-through SRAM with NoBL Architecture
文件大小521KB,共32页
制造商Cypress(赛普拉斯)
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CY7C1355C概述

9-Mbit (256 K x 36 / 512 K x 18) Flow-through SRAM with NoBL Architecture

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CY7C1355C, CY7C1357C
9-Mbit (256 K × 36 / 512 K × 18) Flow-through
SRAM with NoBL™ Architecture
9-Mbit (256 K × 36 / 512 K × 18) Flow-through SRAM with NoBL™ Architecture
Features
Functional Description
The CY7C1355C/CY7C1357C
[1]
is a 3.3 V, 256 K × 36 /
512 K × 18 synchronous flow-through burst SRAM designed
specifically to support unlimited true back-to-back read/write
operations without the insertion of wait states. The
CY7C1355C/CY7C1357C is equipped with the advanced
No Bus Latency (NoBL) logic required to enable consecutive
read/write operations with data being transferred on every clock
cycle. This feature dramatically improves the throughput of data
through the SRAM, especially in systems that require frequent
write-read transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
clock enable (CEN) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133-MHz device).
Write operations are controlled by the two or four byte write
select (BW
X
) and a write enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous chip enables (CE
1
, CE
2
, CE
3
) and an
asynchronous output enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated during
the data portion of a write sequence.
No Bus Latency™ (NoBL™) architecture eliminates dead
cycles between write and read cycles
Can support up to 133-MHz bus operations with zero wait
states
Data is transferred on every clock
Pin compatible and functionally equivalent to ZBT™ devices
Internally self-timed output buffer control to eliminate the need
to use OE
Registered inputs for flow-through operation
Byte write capability
3.3 V / 2.5 V I/O power supply (V
DDQ
)
Fast clock-to-output times
6.5 ns (for 133-MHz device)
Clock enable (CEN) pin to enable clock and suspend operation
Synchronous self-timed writes
Asynchronous output enable
Available in JEDEC-standard and Pb-free 100-pin TQFP,
Pb-free and non Pb-free 119-ball BGA package and 165-ball
FBGA package
Three chip enables for simple depth expansion.
Automatic power-down feature available using ZZ mode or CE
deselect
IEEE 1149.1 JTAG-compatible boundary scan
Burst capability—linear or interleaved burst order
Low standby power
Note
1. For best-practices recommendations, please refer to the Cypress application note
System Design Guidelines
on
www.cypress.com.
Cypress Semiconductor Corporation
Document Number: 38-05539 Rev. *H
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 1, 2011
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