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CY14B101J

产品描述1-Mbit (128 K x 8) Serial (I2C) nvSRAM Infinite read, write, and RECALL cycles
文件大小2MB,共31页
制造商Cypress(赛普拉斯)
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CY14B101J概述

1-Mbit (128 K x 8) Serial (I2C) nvSRAM Infinite read, write, and RECALL cycles

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1-Mbit (128 K × 8) Serial (I C) nvSRAM
1-Mbit (128 K × 8) Serial (I
2
C) nvSRAM
CY14C101J
CY14B101J, CY14E101J
2
Features
1-Mbit nonvolatile static random access memory (nvSRAM)
Internally organized as 128 K × 8
STORE to QuantumTrap nonvolatile elements initiated
automatically on power-down (AutoStore) or by using I
2
C
command (Software STORE) or HSB pin (Hardware STORE)
RECALL to SRAM initiated on power-up (Power-Up
RECALL) or by I
2
C command (Software RECALL)
Automatic STORE on power-down with a small capacitor
(except for CY14X101J1)
High reliability
Industry standard configurations
Operating voltages:
• CY14C101J: V
CC
= 2.4 V to 2.6 V
• CY14B101J: V
CC
= 2.7 V to 3.6 V
• CY14E101J: V
CC
= 4.5 V to 5.5 V
Industrial temperature
8- and 16-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Overview
The Cypress CY14C101J/CY14B101J/CY14E101J combines a
1-Mbit nvSRAM
[1]
with a nonvolatile element in each memory
cell. The memory is organized as 128 K words of 8 bits each. The
embedded nonvolatile elements incorporate the QuantumTrap
technology, creating the world’s most reliable nonvolatile
memory. The SRAM provides infinite read and write cycles, while
the QuantumTrap cells provide highly reliable nonvolatile
storage of data. Data transfers from SRAM to the nonvolatile
elements (STORE operation) takes place automatically at
power-down (except for CY14X101J1). On power-up, data is
restored to the SRAM from the nonvolatile memory (RECALL
operation). The STORE and RECALL operations can also be
initiated by the user through I
2
C commands.
Infinite read, write, and RECALL cycles
1 million STORE cycles to QuantumTrap
Data retention: 20 years at 85 °C
High speed I
2
C interface
Industry standard 100 kHz and 400 kHz speed
Fast-mode Plus: 1 MHz speed
High speed: 3.4 MHz
Zero cycle delay reads and writes
Write protection
Hardware protection using Write Protect (WP) pin
Software block protection for 1/4, 1/2, or entire array
I
2
C access to special functions
Nonvolatile STORE/RECALL
8 byte serial number
Manufacturer ID and Product ID
Sleep mode
Low power consumption
Average active current of 1 mA at 3.4 MHz operation
Average standby mode current of 150 µA
Sleep mode current of 8 µA
Configuration
Feature
AutoStore
Software STORE
Hardware STORE
CY14X101J1 CY14X101J2 CY14X101J3
No
Yes
No
Yes
Yes
No
Yes
Yes
Yes
Logic Block Diagram
V
CC
V
CAP
Serial Number
8x8
Manufacture ID/
Product ID
Memory Control Register
Command Register
Sleep
Quantrum Trap
128 K x 8
SRAM
128 K x 8
STORE
RECALL
Power Control
Block
SDA
SCL
A2, A1
WP
I C Control Logic
Slave Address
Decoder
2
Control Registers Slave
Memory Slave
Memory
Address and Data
Control
Note
1. Serial (I
2
C) nvSRAM is referred to as nvSRAM throughout the datasheet.
Cypress Semiconductor Corporation
Document #: 001-54050 Rev. *F
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised May 4, 2011
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