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JANTXV1N4153UR-1

产品描述Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-213AA, GLASS PACKAGE-2
产品类别分立半导体    二极管   
文件大小417KB,共20页
制造商Bkc Semiconductors Inc
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JANTXV1N4153UR-1概述

Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-213AA, GLASS PACKAGE-2

JANTXV1N4153UR-1规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Bkc Semiconductors Inc
包装说明GLASS PACKAGE-2
Reach Compliance Codeunknown
Is SamacsysN
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.88 V
JEDEC-95代码DO-213AA
JESD-30 代码O-LELF-R2
JESD-609代码e0
最大非重复峰值正向电流0.25 A
元件数量1
端子数量2
最高工作温度175 °C
最大输出电流0.15 A
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
认证状态Not Qualified
参考标准MIL-19500/337H
最大重复峰值反向电压75 V
最大反向恢复时间0.004 µs
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式WRAP AROUND
端子位置END
Base Number Matches1

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The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 25 July 2007.
INCH-POUND
MIL-PRF-19500/337K
25 April 2007
SUPERSEDING
MIL-PRF-19500/337J
1 November 2005
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4153-1,
1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD,
1N4534, AND 1N4534UB, JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification is approved for use by all Departments and Agencies
of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for controlled forward voltage switching
diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two
levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figures 1 (axial leads), 2 (DO-213AA), 3 (UB), 4 (die).
1.3 Maximum ratings. Unless otherwise specified T = +25°C.
A
Type
VBR VRWM IO(PCB) IFSM TSTG
R
ΘJL
R
ΘJEC
R
ΘJA(PCB)
R
ΘJSP
TA =
tp = & TJ L = .375 (UR) (2) (2) (3) (4)
(UB)
inch
(3) (4)
75°C 8.3ms
(9.53 mm)
(1) (2)
(3)
V dc V (pk)
100
75
mA
200
A (pk)
°C
2 -65 to
+175
-55 to
+200
-55 to
+175
-55 to
+200
°C/W
250
°C/W
100
325
250
100
325
120
325
120
°C/W
325
°C/W
1N4153-1
1N4153UR-1
1N4153UB, 1N4153UBCA,
1N4153UBCC, 1N4153UBD
1N4534
1N4534UR
1N4534UB
(1) For temperature-current derating curves, see figures 5 and 6.
(2) T
A
= +75°C for both axial and metal electrode leadless face diodes (MELF) (UR) on printed circuit board (PCB),
PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads for (UR) = .061 inch (1.55 mm) x
.105 inch (2.67 mm); pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch (25.4
mm) long, lead length L
.187 inch (
4.75 mm);
R
ΘJA
with a defined PCB thermal resistance condition
included, is measured at I
O
= 200 mA dc.
(3) See figures 7, 8, and 9 for thermal impedance curves.
(4) R
ΘJSP
refers to thermal resistance from junction to the solder pads of the UB package.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil
.
AMSC N/A
FSC 5961

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