DEIC420
20 Ampere Low-Side Ultrafast RF MOSFET Driver
Description
TheDEIC420 is a CMOS high speed high current gate
driver specifically designed to drive MOSFETs in Class D
and E HF RF applications at up to 45MHz, as well as
other applications requiring ultrafast rise and fall times or
short minimum pulse widths. The DEIC420 can source
and sink 20A of peak current while producing voltage rise
and fall times of less than 4ns, and minimum pulse
widths of 8ns. The input of the driver is compatible with
TTL or CMOS and is fully immune to latch up over the
entire operating range. Designed with small internal
delays, cross conduction/current shoot-through is
virtually eliminated in the DEIC420. Its features and wide
safety margin in operating voltage and power make the
DEIC420 unmatched in performance and value.
The DEIC420 is packaged in DEI's low inductance RF
package incorporating DEI's patented
(1)
RF layout
techniques to minimize stray lead inductances for
optimum switching performance. For applications that do
not require the power dissipation of the DEIC420, the
driver is also available in a 28 pin SOIC package. See
the IXDD415SI data sheet for additional information. The
DEIC420 is a surface-mount device, and incorporates
patented RF layout techniques to minimize stray lead
inductances for optimum switching performance.
(1)
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes
• Latch-Up Protected
• High Peak Output Current: 20A Peak
• Wide Operating Range: 8V to 30V
• Rise And Fall Times of <4ns
• Minimum Pulse Width Of 8ns
• High Capacitive Load
Drive Capability: 4nF in <4ns
• Matched Rise And Fall Times
• 32ns Input To Output Delay Time
• Low Output Impedance
• Low Quiescent Supply Currentt
Applications
•
•
•
•
•
•
•
•
Driving RF MOSFETs
Class D or E Switching Amplifier Drivers
Multi MHz Switch Mode Power Supplies (SMPS)
Pulse Generators
Acoustic Transducer Drivers
Pulsed Laser Diode Drivers
DC to DC Converters
Pulse Transformer Driver
DEI U.S. Patent #4,891,686
Figure 1 - DEIC420 Functional Diagram
Copyright © DIRECTED ENERGY, INC. 2001, 2002
First Release
DEIC420
Absolute Maximum Ratings
Parameter
Supply Voltage
All Other Pins
Power Dissipation
T
AMBIENT
≤25
oC
T
CASE
≤25
oC
Storage Temperature
Soldering Lead Temperature
(10 seconds maximum)
Value
30V
-0.3V to VCC + 0.3V
2W
100W
-65oC to 150oC
300oC
Parameter
Maximum Junction Temperature
Operating Temperature Range
Value
150oC
-40oC to 85oC
Thermal Impedance (Junction To Case)
θ
JC
0.13oC/W
Electrical Characteristics
Unless otherwise noted, T
A
= 25
o
C, 8V
≤
V
CC
≤
30V .
All voltage measurements with respect to DGND. DEIC420 configured as described in
Test Conditions.
Symbol
V
IH
V
IL
V
IN
I
IN
V
OH
V
OL
R
OH
R
OL
I
PEAK
I
DC
f
MAX
t
R
t
F
t
ONDLY
t
OFFDLY
P
Wmin
V
CC
I
CC
Parameter
High input voltage
Low input voltage
Input voltage range
Input current
High output voltage
Low output voltage
Output resistance
@ Output high
Output resistance
@ Output Low
Peak output current
Continuous output
current
Maximum frequency
Rise time
Fall time
(1)
Test Conditions
Min
3.5
Typ
Max
0.8
Units
V
V
V
µA
V
-5
0V
≤
V
IN
≤
V
CC
-10
V
CC
- .025
V
CC
+ 0.3
10
0.025
I
OUT
= 10mA, V
CC
= 15V
I
OUT
= 10mA, V
CC
= 15V
V
CC
= 15V
0.4
0.4
20
4
C
L
=4nF Vcc=15V
C
L
=1nF
C
L
=4nF
C
L
=1nF
C
L
=4nF
C
L
=4nF
Vcc=15V V
OH
=2V to 12V
Vcc=15V V
OH
=2V to 12V
Vcc=15V V
OH
=12V to 2V
Vcc=15V V
OH
=12V to 2V
Vcc=15V
3
4
3
3.5
32
29
8
9
15
1
0
45
0.6
0.6
V
Ω
Ω
A
A
MHz
ns
ns
ns
ns
ns
ns
ns
ns
V
mA
µA
µA
(1)
On-time propagation
(1)
delay
Off-time propagation
(1)
delay
Minimum pulse width
Power supply voltage
Power supply current
38
35
C
L
=4nF Vcc=15V
FWHM C
L
=1nF Vcc=15V
+3V to +3V C
L
=1nF Vcc=15V
8
V
IN
= 3.5V
V
IN
= 0V
V
IN
= + V
CC
30
3
10
10
Refer to Figures 3a and 3b
Specifications Subject To Change Without Notice
(1)
2
DEIC420
Lead Description - DEIC420
SYMBOL
VCC
IN
OUT
GND
FUNCTION
Supply Voltage
Input
Output
Power Ground
DESCRIPTION
Positive power-supply voltage input. These leads provide power to
the entire chip. The range for this voltage is from 8V to 30V.
Input signal-TTL or CMOS compatible.
Driver Output. For application purposes, this lead is connected,
directly to the Gate of a MOSFET
The system ground leads. Internally connected to all circuitry, these
leads provide ground reference for the entire chip. These leads
should be connected to a low noise analog ground plane for
optimum performance.
Note 1:
Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures
when handling and assembling this component.
Figure 2 - DEIC420 Package Photo And Outline
Figure 3a - Characteristics Test Diagram
Figure 3b - Timing Diagram
5V
90%
INPUT 2.5V
10%
0V
t
ONDLY
PW
MIN
t
R
t
OFFDLY
t
F
V
IN
Vcc
90%
OUTPUT
10%
0V
3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
