DE375-102N10A
RF Power MOSFET
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
Symbol
Test Conditions
T
c
= 25°C
Derate 4.4W/°C above 25°C
T
c
= 25°C
V
DSS
I
D25
Maximum Ratings
1000
1000
±20
±30
10
60
10
30
5
>200
940
425
4.5
0.16
0.23
Characteristic Values
min.
typ.
V
V
V
V
A
A
A
mJ
V/ns
V/ns
W
W
W
C/W
C/W
Features
T
J
= 25°C unless otherwise specified
SG1
SG2
GATE
=
=
=
=
1000 V
10 A
1.2
Ω
940 W
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
c
= 25°C
T
c
= 25°C, pulse width limited by T
JM
T
c
= 25°C
T
c
= 25°C
I
S
≤
I
DM
, di/dt
≤
100A/µs, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2Ω
I
S
= 0
R
DS(on)
P
DC
DRAIN
SD1
SD2
max.
V
5.5
±100
V
nA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
V
GS
= 0 V, I
D
= 3 ma
V
DS
= V
GS
, I
D
= 4 ma
V
GS
= ±20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0
T
J
= 125°C
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
≤
300µS, duty cycle d
≤
2%
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
1000
2.5
•
Isolated Substrate
−
high isolation voltage (>2500V)
−
excellent thermal transfer
−
Increased temperature and power
•
•
−
−
•
•
•
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
50
µA
1 mA
1.2
6
-55
150
-55
+150
300
3
18
+150
Ω
S
°C
°C
°C
°C
g
Advantages
•
Optimized for RF and high speed
•
•
High power density
switching at frequencies to 50MHz
Easy to mount—no insulators needed
1.6mm (0.063 in) from case for 10 s
DE375-102N10A
RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
min.
R
G
C
iss
C
oss
C
rss
C
stray
T
d(on)
T
on
T
d(off)
T
off
Q
g(on)
Q
gs
Q
gd
Source-Drain Diode -
Symbol
I
S
I
SM
V
SD
T
rr
Q
RM
I
RM
(1)
I
F
= I
S
, -di/dt = 100A/µs,
V
R
= 100V
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2
Ω
(External)
Back Metal to any Pin
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
typ.
0.3
2900
100
25
33
5
3
5
8
90
30
40
max.
Ω
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
min.
typ.
max.
10
80
1.5
200
0.6
7
A
A
V
ns
µC
A
Test Conditions
V
GS
= 0 V
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2%
These parameters apply to the package, not individual MOSFET devices.
For detailed device mounting and installation instructions, see the “DE-
Series MOSFET Mounting Instructions”
technical note on IXYS RF’s web
site at www.ixysrf.com/Technical_Support/App_notes.html
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
4,850,072
5,049,961
5,640,045
4,881,106
5,063,307
4,891,686
5,187,117
4,931,844
5,237,481
5,017,508
5,486,715
DE375-102N10A
RF Power MOSFET
102N10A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan-
sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the device, Rds is the resistive leakage term.
The output capacitance, C
OSS
, and reverse transfer capacitance, C
RSS
are mod-
eled with reversed biased diodes. This provides a varactor type response nec-
essary for a high power device model. The turn on delay and the turn off delay
are adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
.SUBCKT 102N10A 10 20 30
* TERMINALS: D G S
* 1000 Volt 10 Amp 1.2 ohm N-Channel Power MOSFET
* REV.A 05-23-00
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.5
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 3.0N
RD 4 1 1.5
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0223 Rev 6
© 2003 IXYS RF
An
IXYS
Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
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