PPF260M,PPF260M pdf中文资料,PPF260M引脚图,PPF260M电路-Datasheet-电子工程世界

PPF260M: 产品描述Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA; 产品类别分立半导体晶体管; 文件大小134KB，共2页; 制造商Microsemi; 官网地址https://www.microsemi.com

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PPF260M概述

Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

	PPF260M	PPF260ME3
描述	Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
包装说明	FLANGE MOUNT, S-XSFM-P3	FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code	unknown	unknown
ECCN代码	EAR99	EAR99
配置	SINGLE	SINGLE
最小漏源击穿电压	200 V	200 V
最大漏极电流 (ID)	35 A	35 A
最大漏源导通电阻	0.07 Ω	0.07 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-254AA	TO-254AA
JESD-30 代码	S-XSFM-P3	S-XSFM-P3
元件数量	1	1
端子数量	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	UNSPECIFIED	UNSPECIFIED
封装形状	SQUARE	SQUARE
封装形式	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL
表面贴装	NO	NO
端子形式	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE
晶体管元件材料	SILICON	SILICON
Base Number Matches	1	1

器件捷径: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ