DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D067
BD825; BD829
NPN power transistors
Product specification
Supersedes data of 1997 Jun 20
File under Discrete Semiconductors, SC04
1998 May 29
Philips Semiconductors
Product specification
NPN power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
General purpose
•
Driver stages in hi-fi amplifiers and television circuits.
DESCRIPTION
NPN power transistor in a TO-202; SOT128B plastic
package. PNP complements: BD826 and BD830.
handbook, halfpage
BD825; BD829
PINNING
PIN
1
2
3
emitter
collector, connected to metal part of
mounting surface
base
DESCRIPTION
2
3
1
1 2 3
MAM305
Fig.1
Simplified outline (TO-202; SOT128B)
and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BD825
BD829
V
CEO
collector-emitter voltage
BD825
BD829
I
CM
P
tot
h
FE
f
T
peak collector current
total power dissipation
DC current gain
transition frequency
T
amb
≤
25
°C
T
mb
≤
50
°C
I
C
= 150 mA; V
CE
= 2 V
I
C
= 50 mA; V
CE
= 5 V; f = 100 MHz
open base
−
−
−
−
−
95
−
−
−
−
−
−
−
250
45
80
1.5
2
8
165
−
MHz
V
V
A
W
W
CONDITIONS
open emitter
−
−
−
−
45
100
V
V
MIN.
TYP.
MAX.
UNIT
1998 May 29
2
Philips Semiconductors
Product specification
NPN power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BD825
BD829
V
CEO
collector-emitter voltage
BD825
BD829
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
T
mb
≤
50
°C
open collector
open base
−
−
−
−
−
−
−
−
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BD825; BD829
MIN.
MAX.
45
100
45
80
5
1
1.5
500
2
8
+150
150
+150
UNIT
V
V
V
V
V
A
A
mA
W
W
°C
°C
°C
−65
−
−65
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
CONDITIONS
in free air
VALUE
62.5
12.5
UNIT
K/W
K/W
1998 May 29
3
Philips Semiconductors
Product specification
NPN power transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 125
°C
I
C
= 0; V
EB
= 5 V
V
CE
= 2 V; see Fig.2
I
C
= 5 mA
I
C
= 150 mA
I
C
= 500 mA
V
CEsat
V
BE
f
T
collector-emitter saturation voltage I
C
= 500 mA
base-emitter voltage
transition frequency
I
C
= 500 mA; V
CE
= 2 V
I
C
= 50 mA; V
CE
= 5 V; f = 100 MHz
40
95
25
−
−
−
MIN.
−
−
−
BD825; BD829
TYP.
−
−
−
−
−
−
−
−
250
MAX.
100
10
100
−
165
−
500
1
−
UNIT
nA
µA
nA
mV
V
MHz
handbook, full pagewidth
160
MBH729
hFE
120
VCE = 2 V
80
40
0
10
−1
1
10
10
2
IC (mA)
10
3
Fig.2 DC current gain; typical values.
1998 May 29
4
Philips Semiconductors
Product specification
NPN power transistors
PACKAGE OUTLINE
BD825; BD829
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink,
1 mounting hole; 3 leads (in-line)
E1
P
c
1
SOT128B
P1
HE
D
L2
L1
L
1
2
bp
e1
e
E
3
w
M
Q
A
c
0
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
4.6
4.4
bp
0.8
0.6
c
0.65
0.5
c1
0.56
0.46
D
8.6
8.4
E
10.1
9.9
E
1
10.4
10.0
e
5.08
5
scale
e1
2.54
10 mm
HE
24.2
23.8
L
13.3
12.2
L1
2.4
2.0
L2
(1)
max
2.5
P
3.8
3.6
P1
3.9
3.7
Q
1.7
1.5
w
0.25
Note
1. Plastic flash allowed within this zone
OUTLINE
VERSION
SOT128B
REFERENCES
IEC
JEDEC
TO-202
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1998 May 29
5
单片机
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