VHB50-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI VHB50-28F
is an NPN
power transistor designed for 28 V
Class-C ground station transmitters, it
utilizes emitter ballasting and gold
metallization to provide optimum
VSWR capability.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
E
C
Ø.125 NOM.
FULL R
J
.125
FEATURES:
•
Common Emitter
•
P
G
= 6.0 dB at 50 W/175 MHz
•
Omnigold™
Metalization System
B
C
D
F
E
E
I
GH
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
6.5 A
65 V
35 V
4.0 V
75W
-65 °C to +200 °C
-65 °C to +150 °C
2.3 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
.240 / 6.10
.004 / 0.10
.085 / 2.16
.160 / 4.06
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10728
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
ob
P
G
η
C
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 200 mA
I
C
= 200 mA
I
E
= 10 mA
V
CB
= 30 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
P
IN
= 12 W
P
OUT
=50 W
I
C
= 500 mA
f = 1.0 MHz
f = 175 MHz
MINIMUM TYPICAL MAXIMUM
35
65
4.0
2.0
10
150
80
6.0
60
UNITS
V
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
VHB50-28F
ERROR! REFERENCE SOURCE NOT FOUND.
IMPEDANCE DATA
FREQ.
150 MHz
P
OUT
= 60 W
V
CE
= 28 V
Z
IN
(Ω)
1.0 + j2.0
Z
CL
(Ω)
4.0 – j3.69
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/2