VHB40-12F5
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
VHB40-12F5
is Designed for
Class C Amplifier Applications in VHF
Mobile Radios.
PACKAGE STYLE .500 6L FLG
C
1
A
FEATURES:
•
P
G
= 9.5 dB Typ. at 40 W /175 MHz
• η
C
= 60% Typ. at 40 W /175 MHz
•
Omnigold™
Metalization System
D
3
3
2x Ø N
FU LL R
2
B
G
.725/18,42
F
K
H
D IM
A
B
C
D
E
F
G
H
I
J
.970 / 24.64
.090 / 2.29
.150 / 3.81
.120 / 3.05
K
L
M
N
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.125 / 3.18
.725 / 18.42
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
M IN IM U M
inches / m m
E
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
5.0 A
36 V
18 V
4.0 V
70 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.5 °C/W
1 = COLLECTOR
M
L
J
I
M AXIM U M
inches / m m
.150 / 3.43
.045 / 1.14
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
2 = BASE
3 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
ob
P
G
η
C
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 15 V
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
5.0
UNITS
V
V
V
V
mA
---
pF
dB
%
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CC
= 12.5 V
I
C
= 5.0 A
f = 1.0 MHz
P
OUT
= 40 W
f = 175 MHz
20
200
135
8.5
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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