SKKT 27B12 E G6
Absolute Maximum Ratings
Symbol
Chip
I
T(AV)
I
TSM
i
2
t
sinus 180°
10 ms
10 ms
T
c
= 85 °C
T
c
= 100 °C
T
j
= 25 °C
T
j
= 130 °C
T
j
= 25 °C
T
j
= 130 °C
28
21
550
480
1513
1152
1300
1200
1200
T
j
= 130 °C
T
j
= 130 °C
140
1000
-40 ... 130
-40 ... 125
a.c.; 50 Hz; r.m.s.
1 min
1s
3000
3600
A
A
A
A
kA
2
s
kA
2
s
V
V
V
A/µs
V/µs
°C
°C
V
V
Conditions
Values
Unit
SEMIPACK
®
1
Thyristor Modules
SKKT 27B12 E G6
i
2
t
V
RSM
V
RRM
V
DRM
(di/dt)
cr
(dv/dt)
cr
T
j
Module
T
stg
V
isol
Features
• Heat transfer through aluminium oxide
ceramic isolated metal baseplate
• Hard soldered joints for high reliability
• UL recognized, file no. E63532
Characteristics
Symbol
Chip
V
T
V
T(TO)
r
T
I
DD
;I
RD
t
gd
t
gr
t
q
I
H
I
L
V
GT
I
GT
V
GD
I
GD
R
th(j-c)
R
th(j-c)
R
th(j-c)
Module
R
th(c-s)
M
s
M
t
a
w
75
chip
module
to heatsink M5
to terminals M5
4.25
2.55
0.22
0.11
5.75
3.45
5 * 9,81
K/W
K/W
Nm
Nm
m/s
2
g
T
j
= 25 °C, I
T
= 75 A
T
j
= 130 °C
T
j
= 130 °C
T
j
= 130 °C, V
DD
= V
DRM
; V
RD
= V
RRM
T
j
= 25 °C, I
G
= 1 A, di
G
/dt = 1 A/µs
V
D
= 0.67 * V
DRM
T
j
= 130 °C
T
j
= 25 °C
T
j
= 25 °C, R
G
= 33
Ω
T
j
= 25 °C, d.c.
T
j
= 25 °C, d.c.
T
j
= 130 °C, d.c.
T
j
= 130 °C, d.c.
cont.
sin. 180°
rec. 120°
per chip
per module
per chip
per module
per chip
per module
2.5
100
0.25
4
0.880
0.440
0.930
0.465
0.980
0.490
1
2
150
150
300
250
600
1.45
0.85
8.50
1.7
1
10.00
20
V
V
mΩ
mA
µs
µs
µs
mA
mA
V
mA
V
mA
K/W
K/W
K/W
K/W
K/W
K/W
Typical Applications
• DC motor control (e. g. for machine
tools)
• AC motor soft starters
• Temperature control (e. g. for ovens,
chemical processes)
• Professional light dimming (studios,
theaters)
Conditions
min.
typ.
max.
Unit
SKKT
© by SEMIKRON
Rev. 0 – 19.01.2009
1
SKKT 27B12 E G6
Fig. 1L: Max. power dissipation per chip vs. on-state
current
Fig. 1R: Max. power dissipation per chip vs. ambient
temperature
Fig. 2L: Max. power dissipation of one module vs. rms
current
Fig. 2R: Max. power dissipation of one module vs. case
temperature
Fig. 3L: Max. power dissipation of two modules vs. direct
current
Fig. 3R: Max. power dissipation of two modules vs. case
temperature
2
Rev. 0 – 19.01.2009
© by SEMIKRON
SKKT 27B12 E G6
Fig. 4L: Max. power dissipation of three modules vs.
direct current
Fig. 4R: Max. power dissipation of three modules vs.
case temperature
Fig. 5: Recovered charge vs. current decrease
Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics
Fig. 8: Surge overload current vs. time
© by SEMIKRON
Rev. 0 – 19.01.2009
3
SKKT 27B12 E G6
Fig. 9: Gate trigger characteristics
SKKT...B
SEMIPACK 1
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
4
Rev. 0 – 19.01.2009
© by SEMIKRON
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