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HB56UW3273E-6A: 产品描述EDO DRAM Module, 32MX72, 60ns, CMOS, DIMM-168; 产品类别存储存储; 文件大小497KB，共31页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HB56UW3273E-6A概述

EDO DRAM Module, 32MX72, 60ns, CMOS, DIMM-168

HB56UW3273E-6A规格参数

参数名称	属性值
零件包装代码	DIMM
包装说明	DIMM, DIMM168
针数	168
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	EDO
最长访问时间	60 ns
I/O 类型	COMMON
JESD-30 代码	R-XDMA-N168
内存密度	2415919104 bit
内存集成电路类型	EDO DRAM MODULE
内存宽度	72
功能数量	1
端口数量	1
端子数量	168
字数	33554432 words
字数代码	32000000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32MX72
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装等效代码	DIMM168
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
电源	3.3 V
认证状态	Not Qualified
刷新周期	4096
座面最大高度	60.96 mm
最大待机电流	0.046 A
最大压摆率	2.98 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	DUAL
Base Number Matches	1

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HB56UW3273 Series

33554432-word

72-bit High Density Dynamic RAM Module

ADE-203-653 (Z)

Preliminary

Rev. 0.0

Sep. 6, 1996

Description

The HB56UW3273 Series belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been

developed an optimized main memory solution for 4 and 8-byte processor applications. The

HB56UW3273E Series is a 32 M

72 Dynamic RAM Module, mounted 36 pieces of 64-Mbit DRAM

(HM5165405ATT) sealed in TSOP package and 2 pieces of 16-bit BiCMOS line driver (74LVT16244)

sealed in TSSOP package. The HB56UW3273EJ Series is a 32 M

72 Dynamic RAM Module, mounted

36 pieces of 64-Mbit DRAM (HM5165405AJ) sealed in SOJ package and 2 pieces of 16-bit BiCMOS line

driver (74LVT16244) sealed in TSSOP package. The HB56UW3273 Series offers Extended Data Out

(EDO) Page Mode as a high Åiì˙Åiì˙speed access mode. An outline of the HB56UW3273 Series is 168-pin

socket type package (dual lead out). Therefore, the HB56UW3273 Series makes high density mounting

possible without surface mount technology. The HB56UW3273 Series provides common data inputs and

outputs. Decoupling capacitors are mounted beside each TSOP or SOJ on the its module board.

Features

•

168-pin socket type package (Dual lead out)



Outline : 133.35 mm (Length)

60.96 mm (Height)

4.00 mm (Thickness) (HB56UW3273E

Series)

Outline : 176.53 (133.35) mm (Length)

41.91 mm (Height)

9.00 mm (Thickness)

(HB56UW3273EJ Series)



Lead pitch : 1.27 mm

•

Single 3.3 V supply (±0.3 V)

•

High speed



Access time: t

RAC

= 60 ns/70 ns (max)



Access time: t

CAC

= 20 ns/23 ns (max)

•

Low power dissipation



Active mode: 12.02 W/10.73 W (max)



Standby mode (TTL): 295.2 mW (max)

•

JEDEC standard outline buffered 8-byte DIMM

Preliminary: This document contains information on a new product. Specifications and information

contained herein are subject to change without notice.

HB56UW3273E-6A相似产品对比

	HB56UW3273E-6A	HB56UW3273EJ-6A	HB56UW3273EJ-7A	HB56UW3273E-7A
描述	EDO DRAM Module, 32MX72, 60ns, CMOS, DIMM-168	EDO DRAM Module, 32MX72, 60ns, CMOS, DIMM-168	EDO DRAM Module, 32MX72, 70ns, CMOS, DIMM-168	EDO DRAM Module, 32MX72, 70ns, CMOS, DIMM-168
零件包装代码	DIMM	DIMM	DIMM	DIMM
包装说明	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
针数	168	168	168	168
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99
访问模式	EDO	EDO	EDO	EDO
最长访问时间	60 ns	60 ns	70 ns	70 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
内存密度	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit
内存集成电路类型	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
内存宽度	72	72	72	72
功能数量	1	1	1	1
端口数量	1	1	1	1
端子数量	168	168	168	168
字数	33554432 words	33554432 words	33554432 words	33554432 words
字数代码	32000000	32000000	32000000	32000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C
组织	32MX72	32MX72	32MX72	32MX72
输出特性	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM
封装等效代码	DIMM168	DIMM168	DIMM168	DIMM168
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
电源	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	4096	4096	4096	4096
座面最大高度	60.96 mm	41.91 mm	41.91 mm	60.96 mm
最大待机电流	0.046 A	0.046 A	0.046 A	0.046 A
最大压摆率	2.98 mA	2.98 mA	2.62 mA	2.62 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL

HB56UW3273E-6A

HB56UW3273E-6A概述

HB56UW3273E-6A规格参数

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